KSA1013OTA

Fairchild/ON Semiconductor KSA1013OTA

Part Number:
KSA1013OTA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2845719-KSA1013OTA
Description:
TRANS PNP 160V 1A TO-92L
ECAD Model:
Datasheet:
KSA1013OTA

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Specifications
Fairchild/ON Semiconductor KSA1013OTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013OTA.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 16 hours ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Number of Pins
    3
  • Weight
    371.1027mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -160V
  • Max Power Dissipation
    900mW
  • Terminal Position
    BOTTOM
  • Current Rating
    -1A
  • Frequency
    50MHz
  • Base Part Number
    KSA1013
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    900mW
  • Transistor Application
    AMPLIFIER
  • Gain Bandwidth Product
    50MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    160V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 200mA 5V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    160V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    -1.5V
  • Max Breakdown Voltage
    160V
  • Collector Base Voltage (VCBO)
    -160V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    60
  • Height
    8.2mm
  • Length
    5.1mm
  • Width
    4.1mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
KSA1013OTA Overview
This device has a DC current gain of 100 @ 200mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 160V volts.The maximum collector current is 1A volts.

KSA1013OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz


KSA1013OTA Applications
There are a lot of ON Semiconductor
KSA1013OTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
KSA1013OTA More Descriptions
Transistor,bjt,pnp,160V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Product Comparison
The three parts on the right have similar specifications to KSA1013OTA.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    REACH SVHC
    View Compare
  • KSA1013OTA
    KSA1013OTA
    LAST SHIPMENTS (Last Updated: 16 hours ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    3
    371.1027mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -160V
    900mW
    BOTTOM
    -1A
    50MHz
    KSA1013
    1
    Single
    900mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    160V
    1A
    100 @ 200mA 5V
    1μA ICBO
    1.5V @ 50mA, 500mA
    160V
    50MHz
    -1.5V
    160V
    -160V
    -6V
    60
    8.2mm
    5.1mm
    4.1mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • KSA1242YTU
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    150°C TJ
    Tube
    -
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN
    -
    -
    -
    SINGLE
    -
    -
    -
    1
    -
    -
    AMPLIFIER
    -
    PNP
    PNP
    -
    -
    160 @ 500mA 2V
    100μA ICBO
    1V @ 100mA, 4A
    -
    180MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    NOT APPLICABLE
    unknown
    NOT APPLICABLE
    3
    R-PSIP-T3
    COMMERCIAL
    SINGLE
    10W
    20V
    5A
    180MHz
    -
  • KSA1013YTA
    ACTIVE (Last Updated: 17 hours ago)
    6 Weeks
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 Long Body (Formed Leads)
    3
    371.1027mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    Other Transistors
    -160V
    900mW
    BOTTOM
    -1A
    50MHz
    KSA1013
    1
    Single
    900mW
    AMPLIFIER
    50MHz
    PNP
    PNP
    160V
    1A
    160 @ 200mA 5V
    1μA ICBO
    1.5V @ 50mA, 500mA
    160V
    50MHz
    -1.5V
    160V
    -160V
    -6V
    60
    8.2mm
    5.1mm
    4.1mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No SVHC
  • KSA1174FBU
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 Short Body
    -
    -
    -
    150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    KSA1174
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    300 @ 1mA 6V
    1μA
    300mV @ 1mA, 10mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    300mW
    120V
    50mA
    100MHz
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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