Fairchild/ON Semiconductor KSA1013OTA
- Part Number:
- KSA1013OTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845719-KSA1013OTA
- Description:
- TRANS PNP 160V 1A TO-92L
- Datasheet:
- KSA1013OTA
Fairchild/ON Semiconductor KSA1013OTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013OTA.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 16 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body (Formed Leads)
- Number of Pins3
- Weight371.1027mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-160V
- Max Power Dissipation900mW
- Terminal PositionBOTTOM
- Current Rating-1A
- Frequency50MHz
- Base Part NumberKSA1013
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation900mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 200mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-1.5V
- Max Breakdown Voltage160V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-6V
- hFE Min60
- Height8.2mm
- Length5.1mm
- Width4.1mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1013OTA Overview
This device has a DC current gain of 100 @ 200mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 160V volts.The maximum collector current is 1A volts.
KSA1013OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OTA Applications
There are a lot of ON Semiconductor
KSA1013OTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 100 @ 200mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1A.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 160V volts.The maximum collector current is 1A volts.
KSA1013OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OTA Applications
There are a lot of ON Semiconductor
KSA1013OTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1013OTA More Descriptions
Transistor,bjt,pnp,160V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Ammo
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to KSA1013OTA.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionREACH SVHCView Compare
-
KSA1013OTALAST SHIPMENTS (Last Updated: 16 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2013e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A100 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V160V-160V-6V608.2mm5.1mm4.1mmNoROHS3 CompliantLead Free--------------
-
---Through HoleTO-251-3 Short Leads, IPak, TO-251AA--SILICON150°C TJTube-e3yesObsolete1 (Unlimited)3-MATTE TIN---SINGLE---1--AMPLIFIER-PNPPNP--160 @ 500mA 2V100μA ICBO1V @ 100mA, 4A-180MHz---------ROHS3 Compliant-NONOT APPLICABLEunknownNOT APPLICABLE3R-PSIP-T3COMMERCIALSINGLE10W20V5A180MHz-
-
ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V160V-160V-6V608.2mm5.1mm4.1mmNoROHS3 CompliantLead Free------------No SVHC
-
---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)---------KSA1174------PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA---------------------300mW120V50mA100MHz-
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 October 2023
What Is H1102N Pulse Ethernet Transformer?
Ⅰ. What is a transformer?Ⅱ. Overview of H1102NLⅢ. Pin configuration, symbol and footprint of H1102NLⅣ. Technical parameters of H1102NLⅤ. Features of H1102NLⅥ. Working principle of H1102NLⅦ. Dimensions and... -
16 October 2023
BD139 Transistor Equivalent, Technical Parameters and Applications
Ⅰ. Overview of BD139Ⅱ. BD139 symbol, footprint and pin configurationⅢ. Technical parameters of BD139Ⅳ. Features of BD139Ⅴ. Working principle of BD139 transistorⅥ. Circuit of BD139 transistor power amplifierⅦ.... -
17 October 2023
IRFP250 Transistor Equivalent, Pin Configuration, Working Principle and More
Ⅰ. Overview of IRFP250Ⅱ. Symbol, footprint and pin configuration of IRFP250Ⅲ. Technical parameters of IRFP250Ⅳ. What are the features of IRFP250?Ⅴ. Working principle of IRFP250Ⅵ. Applications of IRFP250Ⅶ.... -
17 October 2023
A Review of TDA2009A Dual Audio Power Amplifier
Ⅰ. What is TDA2009A?Ⅱ. Symbol, footprint and pin configuration of TDA2009AⅢ. Technical parameters of TDA2009AⅣ. What are the features of TDA2009A?Ⅴ. How does the overheating protection circuit of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.