Fairchild/ON Semiconductor KSA1013OBU
- Part Number:
- KSA1013OBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3553766-KSA1013OBU
- Description:
- TRANS PNP 160V 1A TO-92L
- ECAD Model:
-
- Datasheet:
- KSA1013OBU
Fairchild/ON Semiconductor KSA1013OBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor KSA1013OBU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Factory Lead Time2 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 Long Body
- Number of Pins3
- Weight185mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-160V
- Max Power Dissipation900mW
- Terminal PositionBOTTOM
- Current Rating-1A
- Frequency50MHz
- Base Part NumberKSA1013
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation900mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product50MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)160V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 200mA 5V
- Current - Collector Cutoff (Max)1μA ICBO
- Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage160V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage-1.5V
- Collector Base Voltage (VCBO)-160V
- Emitter Base Voltage (VEBO)-6V
- hFE Min60
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
KSA1013OBU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 200mA 5V.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 50MHz.A maximum collector current of 1A volts can be achieved.
KSA1013OBU Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OBU Applications
There are a lot of ON Semiconductor
KSA1013OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 200mA 5V.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -1A.In the part, the transition frequency is 50MHz.A maximum collector current of 1A volts can be achieved.
KSA1013OBU Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at -6V
the current rating of this device is -1A
a transition frequency of 50MHz
KSA1013OBU Applications
There are a lot of ON Semiconductor
KSA1013OBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
KSA1013OBU More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Bulk - Bulk
PNP Expitaxial Silicon Transistor TO-92
Trans GP BJT PNP 160V 1A 3-Pin TO-92L Bulk - Bulk
PNP Expitaxial Silicon Transistor TO-92
The three parts on the right have similar specifications to KSA1013OBU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionCurrent RatingFrequencyBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningRoHS StatusLead FreeMax Breakdown VoltageHeightLengthWidthREACH SVHCPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionView Compare
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KSA1013OBULAST SHIPMENTS (Last Updated: 1 week ago)2 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body3185mgSILICON150°C TJBulk2017e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A100 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V-160V-6V60NoROHS3 CompliantLead Free---------- -
ACTIVE (Last Updated: 17 hours ago)6 WeeksThrough HoleThrough HoleTO-226-3, TO-92-3 Long Body (Formed Leads)3371.1027mgSILICON150°C TJTape & Box (TB)2013e3yesActive1 (Unlimited)3EAR99Tin (Sn)Other Transistors-160V900mWBOTTOM-1A50MHzKSA10131Single900mWAMPLIFIER50MHzPNPPNP160V1A160 @ 200mA 5V1μA ICBO1.5V @ 50mA, 500mA160V50MHz-1.5V-160V-6V60NoROHS3 CompliantLead Free160V8.2mm5.1mm4.1mmNo SVHC----
-
---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJTape & Box (TB)---Obsolete1 (Unlimited)---------KSA1175------PNP--200 @ 1mA 6V100nA ICBO300mV @ 10mA, 100mA--------------250mW50V150mA180MHz
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---Through HoleTO-226-3, TO-92-3 Short Body---150°C TJBulk---Obsolete1 (Unlimited)---------KSA1174------PNP--300 @ 1mA 6V1μA300mV @ 1mA, 10mA--------------300mW120V50mA100MHz
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