Microsemi Corporation JANTXV2N6804

JANTXV2N6804 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 81 mJ.Its continuous drain current is 11A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 50A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

JANTXV2N6804 Features
the avalanche energy rating (Eas) is 81 mJ
a continuous drain current (ID) of 11A
based on its rated peak drain current 50A.
a 100V drain to source voltage (Vdss)


JANTXV2N6804 Applications
There are a lot of Microsemi Corporation
JANTXV2N6804 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters