Microsemi Corporation JANTXV2N6796
- Part Number:
- JANTXV2N6796
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2491561-JANTXV2N6796
- Description:
- MOSFET N-CH 100V 8A
- ECAD Model:
-
- Datasheet:
- JANTXV2N6796
Microsemi Corporation JANTXV2N6796 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTXV2N6796.
- Factory Lead Time24 Weeks
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AF Metal Can
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/557
- Published1997
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max800mW Ta 25W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation800mW
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs195m Ω @ 8A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C8A Tc
- Gate Charge (Qg) (Max) @ Vgs28.51nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)8A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)8A
- RoHS StatusNon-RoHS Compliant
JANTXV2N6796 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.As shown in the table below, the drain current of this device is 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
JANTXV2N6796 Features
a continuous drain current (ID) of 8A
a 100V drain to source voltage (Vdss)
JANTXV2N6796 Applications
There are a lot of Microsemi Corporation
JANTXV2N6796 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8A.As shown in the table below, the drain current of this device is 8A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
JANTXV2N6796 Features
a continuous drain current (ID) of 8A
a 100V drain to source voltage (Vdss)
JANTXV2N6796 Applications
There are a lot of Microsemi Corporation
JANTXV2N6796 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
JANTXV2N6796 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
100 V, 200 V, 400 V AND 500 V, N-CHANNEL, ENHANCEMENT MODE MOSFET POWER TRANSISTOR 3TO-205
Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
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