JANTX2N7236

Microsemi Corporation JANTX2N7236

Part Number:
JANTX2N7236
Manufacturer:
Microsemi Corporation
Ventron No:
3586793-JANTX2N7236
Description:
MOSFET P-CH 100V 18A
ECAD Model:
Datasheet:
JANTX2N7236

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Specifications
Microsemi Corporation JANTX2N7236 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N7236.
  • Contact Plating
    Lead, Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-254-3, TO-254AA (Straight Leads)
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/595
  • Published
    1997
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Gold (Au) - with Nickel (Ni) barrier
  • Additional Feature
    HIGH RELIABILITY
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    PIN/PEG
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    S-CSFM-P3
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation-Max
    4W Ta 125W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    4W
  • Case Connection
    ISOLATED
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    220m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    18A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    60nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    18A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.22Ohm
  • Pulsed Drain Current-Max (IDM)
    72A
  • Avalanche Energy Rating (Eas)
    500 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
JANTX2N7236 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

JANTX2N7236 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 18A
based on its rated peak drain current 72A.
a 100V drain to source voltage (Vdss)


JANTX2N7236 Applications
There are a lot of Microsemi Corporation
JANTX2N7236 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
JANTX2N7236 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3Infineon SCT
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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