Microsemi Corporation JANTX2N7236
- Part Number:
- JANTX2N7236
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 3586793-JANTX2N7236
- Description:
- MOSFET P-CH 100V 18A
- Datasheet:
- JANTX2N7236
Microsemi Corporation JANTX2N7236 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N7236.
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-254-3, TO-254AA (Straight Leads)
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/595
- Published1997
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishGold (Au) - with Nickel (Ni) barrier
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeS-CSFM-P3
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max4W Ta 125W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation4W
- Case ConnectionISOLATED
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs220m Ω @ 18A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)18A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.22Ohm
- Pulsed Drain Current-Max (IDM)72A
- Avalanche Energy Rating (Eas)500 mJ
- RoHS StatusNon-RoHS Compliant
JANTX2N7236 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
JANTX2N7236 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 18A
based on its rated peak drain current 72A.
a 100V drain to source voltage (Vdss)
JANTX2N7236 Applications
There are a lot of Microsemi Corporation
JANTX2N7236 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.This device's continuous drain current (ID) is 18A, which represents the maximum continuous current it can conduct.In terms of pulsed drain current, it has a maximum of 72A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
JANTX2N7236 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 18A
based on its rated peak drain current 72A.
a 100V drain to source voltage (Vdss)
JANTX2N7236 Applications
There are a lot of Microsemi Corporation
JANTX2N7236 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
JANTX2N7236 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3Infineon SCT
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3Infineon SCT
Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
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