Microsemi Corporation JANTX2N7225
- Part Number:
- JANTX2N7225
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2491541-JANTX2N7225
- Description:
- MOSFET N-CH
- Datasheet:
- JANTX2N7225
Microsemi Corporation JANTX2N7225 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JANTX2N7225.
- Contact PlatingLead, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-254-3, TO-254AA (Straight Leads)
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- SeriesMilitary, MIL-PRF-19500/592
- Published1996
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryFET General Purpose Powers
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormPIN/PEG
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Reference StandardMIL-19500/592
- Qualification StatusQualified
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation-Max4W Ta 150W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs105m Ω @ 27.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C27.4A Tc
- Gate Charge (Qg) (Max) @ Vgs115nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)27.4A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.1Ohm
- Pulsed Drain Current-Max (IDM)110A
- DS Breakdown Voltage-Min200V
- Avalanche Energy Rating (Eas)500 mJ
- RoHS StatusNon-RoHS Compliant
JANTX2N7225 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 110A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JANTX2N7225 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 27.4A
based on its rated peak drain current 110A.
a 200V drain to source voltage (Vdss)
JANTX2N7225 Applications
There are a lot of Microsemi Corporation
JANTX2N7225 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 500 mJ.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 110A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 200V, it should remain above the 200V level.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
JANTX2N7225 Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 27.4A
based on its rated peak drain current 110A.
a 200V drain to source voltage (Vdss)
JANTX2N7225 Applications
There are a lot of Microsemi Corporation
JANTX2N7225 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
JANTX2N7225 More Descriptions
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
JANTX Series 200 V 105 mOhm 27.4 A Flange Mount Power Mosfet - TO-254AA
100V THRU 500V, UP TO 34A, N-CHANNEL, MOSFET POWER TRANSISTOR, REPETITIVE AVALANCHE RATED 3TO-254AA
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
JANTX Series 200 V 105 mOhm 27.4 A Flange Mount Power Mosfet - TO-254AA
100V THRU 500V, UP TO 34A, N-CHANNEL, MOSFET POWER TRANSISTOR, REPETITIVE AVALANCHE RATED 3TO-254AA
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
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