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JAN2N6798

Microsemi Corporation JAN2N6798

Part Number:
JAN2N6798
Manufacturer:
Microsemi Corporation
Ventron No:
2491520-JAN2N6798
Description:
MOSFET N-CH TO-205AF TO-39
ECAD Model:
Datasheet:
JAN2N6798

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Specifications
Microsemi Corporation JAN2N6798 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N6798.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AF Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/557
  • Published
    1997
  • Pbfree Code
    no
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    800mW Ta 25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    420m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    5.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42.07nC @ 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    5.5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.42Ohm
  • DS Breakdown Voltage-Min
    200V
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N6798 Overview
Its continuous drain current is 5.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

JAN2N6798 Features
a continuous drain current (ID) of 5.5A
a 200V drain to source voltage (Vdss)


JAN2N6798 Applications
There are a lot of Microsemi Corporation
JAN2N6798 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
JAN2N6798 More Descriptions
Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
MOSFET N-CH TO-205AF TO-39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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