JAN2N6796

Microsemi Corporation JAN2N6796

Part Number:
JAN2N6796
Manufacturer:
Microsemi Corporation
Ventron No:
2491497-JAN2N6796
Description:
MOSFET N-CH TO-205AF TO-39
ECAD Model:
Datasheet:
JAN2N6796

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Specifications
Microsemi Corporation JAN2N6796 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation JAN2N6796.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-205AF Metal Can
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Series
    Military, MIL-PRF-19500/557
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • HTS Code
    8541.21.00.95
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • Reference Standard
    MIL-19500
  • Qualification Status
    Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    800mW Ta 25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    195m Ω @ 8A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    28.51nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    8A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    8A
  • Drain-source On Resistance-Max
    0.18Ohm
  • DS Breakdown Voltage-Min
    100V
  • Turn Off Time-Max (toff)
    85ns
  • Turn On Time-Max (ton)
    105ns
  • RoHS Status
    Non-RoHS Compliant
Description
JAN2N6796 Overview
Its continuous drain current is 8A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 8A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

JAN2N6796 Features
a continuous drain current (ID) of 8A
a 100V drain to source voltage (Vdss)


JAN2N6796 Applications
There are a lot of Microsemi Corporation
JAN2N6796 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
JAN2N6796 More Descriptions
Trans MOSFET N-CH 100V 8A 3-Pin TO-39
MOSFET N-CH TO-205AF TO-39
MOSFET N-CH 100V 8A TO39
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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