IXYS IXYP20N120C3

Name: IXYP20N120C3
Brand: IXYS
SKU: 3587270-IXYP20N120C3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXYP20N120C3

Manufacturer:: IXYS

Ventron No:: 3587270-IXYP20N120C3

Description:: IGBT 1200V 40A 278W TO-220

ECAD Model:

Datasheet:: IXYP20N120C3

Specifications

IXYS IXYP20N120C3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXYP20N120C3.

Factory Lead Time
24 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
GenX3™, XPT™
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Additional Feature
AVALANCHE RATED
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
278W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
IXY*20N120
Number of Elements
1
Element Configuration
Single
Power Dissipation
278W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
40A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
4V
Turn On Time
60 ns
Test Condition
600V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 20A
Turn Off Time-Nom (toff)
220 ns
Gate Charge
53nC
Current - Collector Pulsed (Icm)
96A
Td (on/off) @ 25°C
20ns/90ns
Switching Energy
1.3mJ (on), 500μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
16mm
Length
10.66mm
Width
4.82mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXYP20N120C3 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXYP20N120C3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXYP20N120C3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXYP20N120C3 More Descriptions

IXYP20N120C3 Series 1200 V 40 A High-Speed GenX3TM IGBT - TO-220AB
Trans IGBT Chip N-CH 1200V 40A 278000mW 3-Pin(3 Tab) TO-220AB
IGBT Transistors GenX3 1200V XPT IGBT

Product Comparison

The three parts on the right have similar specifications to IXYP20N120C3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Additional Feature

Subcategory

Max Power Dissipation

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

RoHS Status

Lead Free

Weight

Power - Max

Reverse Recovery Time

IGBT Type

View Compare
IXYP20N120C3

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

GenX3™, XPT™

2013

Active

1 (Unlimited)

3

AVALANCHE RATED

Insulated Gate BIP Transistors

278W

NOT SPECIFIED

unknown

NOT SPECIFIED

IXY*20N120

1

Single

278W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

1.2kV

40A

TO-220AB

1.2kV

1200V

4V

60 ns

600V, 20A, 10 Ω, 15V

3.4V @ 15V, 20A

220 ns

53nC

96A

20ns/90ns

1.3mJ (on), 500μJ (off)

20V

5V

16mm

10.66mm

4.82mm

ROHS3 Compliant

Lead Free

-

-

-

-

-
IXYP15N65C3D1M

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

GenX3™, XPT™

2014

Active

1 (Unlimited)

-

-

-

48W

-

-

-

-

-

Single

-

-

Standard

-

-

2.5V

16A

-

650V

-

1.96V

-

400V, 15A, 20 Ω, 15V

2.5V @ 15V, 15A

-

19nC

80A

15ns/68ns

270μJ (on), 230μJ (off)

-

-

-

-

-

ROHS3 Compliant

-

6.000006g

48W

30 ns

PT

IXYP20N120C3 vs IXYP15N65C3D1M
IXYP20N65C3D1M

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

GenX3™, XPT™

2014

Active

1 (Unlimited)

-

-

-

50W

-

-

-

-

-

Single

-

-

Standard

-

-

2.5V

18A

-

650V

-

2.27V

-

400V, 20A, 20 Ω, 15V

2.5V @ 15V, 20A

-

30nC

105A

19ns/80ns

430μJ (on), 350μJ (off)

-

-

-

-

-

ROHS3 Compliant

-

6.000006g

50W

30 ns

PT

IXYP20N120C3 vs IXYP20N65C3D1M
IXYP50N65C3

IXYS

24 Weeks

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

GenX3™, XPT™

2014

Active

1 (Unlimited)

-

-

-

600W

-

unknown

-

-

-

Single

-

-

Standard

-

-

2.1V

130A

-

650V

-

1.74V

-

400V, 36A, 5 Ω, 15V

2.1V @ 15V, 36A

-

80nC

250A

22ns/80ns

1.3mJ (on), 370μJ (off)

-

-

-

-

-

ROHS3 Compliant

-

6.000006g

600W

-

PT

IXYP20N120C3 vs IXYP50N65C3