IXYS IXXK110N65B4H1

Name: IXXK110N65B4H1
Brand: IXYS
SKU: 2854559-IXXK110N65B4H1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXXK110N65B4H1

Manufacturer:: IXYS

Ventron No:: 2854559-IXXK110N65B4H1

Description:: IGBT 650V 240A 880W TO264

ECAD Model:

Datasheet:: IXXK110N65B4H1

Specifications

IXYS IXXK110N65B4H1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXXK110N65B4H1.

Factory Lead Time
18 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
GenX4™, XPT™
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
880W
Reach Compliance Code
unknown
Base Part Number
110N65
Element Configuration
Single
Power Dissipation
880W
Input Type
Standard
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
650V
Max Collector Current
240A
Reverse Recovery Time
100 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.75V
Test Condition
400V, 55A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 110A
IGBT Type
PT
Gate Charge
183nC
Current - Collector Pulsed (Icm)
630A
Td (on/off) @ 25°C
38ns/156ns
Switching Energy
2.2mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
6.5V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IXXK110N65B4H1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXXK110N65B4H1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXXK110N65B4H1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

IXXK110N65B4H1 More Descriptions

Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3 Tab) TO-264AA
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
IGBT 650V 240A 880W TO264
IGBT, 650V, 250A, TO-264
IGBT DISCRETE

Product Comparison

The three parts on the right have similar specifications to IXXK110N65B4H1.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Subcategory

Max Power Dissipation

Reach Compliance Code

Base Part Number

Element Configuration

Power Dissipation

Input Type

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

RoHS Status

Lead Free

Transistor Element Material

Number of Terminations

Additional Feature

Pin Count

JESD-30 Code

Number of Elements

Case Connection

Power - Max

Transistor Application

Turn On Time

Turn Off Time-Nom (toff)

Turn On Delay Time

Turn-Off Delay Time

View Compare
IXXK110N65B4H1

IXYS

18 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~175°C TJ

Tube

GenX4™, XPT™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

880W

unknown

110N65

Single

880W

Standard

N-CHANNEL

650V

240A

100 ns

650V

1.75V

400V, 55A, 2 Ω, 15V

2.1V @ 15V, 110A

PT

183nC

630A

38ns/156ns

2.2mJ (on), 1.05mJ (off)

20V

6.5V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IXXK200N60B3

IXYS

28 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~175°C TJ

Tube

GenX3™, XPT™

2013

Active

1 (Unlimited)

Insulated Gate BIP Transistors

1.63kW

unknown

-

Single

1.63kW

Standard

N-CHANNEL

1.7V

380A

-

600V

1.4V

360V, 100A, 1 Ω, 15V

1.7V @ 15V, 100A

PT

315nC

900A

48ns/160ns

2.85mJ (on), 2.9mJ (off)

20V

6V

ROHS3 Compliant

-

SILICON

3

AVALANCHE RATED

3

R-PSFM-T3

1

COLLECTOR

1630W

POWER CONTROL

140 ns

395 ns

-

-

IXXK110N65B4H1 vs IXXK200N60B3
IXXK300N60C3

IXYS

28 Weeks

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~175°C TJ

Tube

GenX3™, XPT™

2012

Active

1 (Unlimited)

Insulated Gate BIP Transistors

2.3kW

-

-

-

-

Standard

N-CHANNEL

2V

510A

-

600V

-

400V, 100A, 1 Ω, 15V

2V @ 15V, 100A

PT

438nC

1075A

50ns/160ns

3.35mJ (on), 1.9mJ (off)

20V

5.5V

ROHS3 Compliant

-

-

-

-

-

-

-

-

2300W

-

-

-

-

-

IXXK110N65B4H1 vs IXXK300N60C3
IXXK160N65C4

IXYS

-

Through Hole

Through Hole

TO-264-3, TO-264AA

-55°C~175°C TJ

Tube

GenX4™, XPT™

2013

Discontinued

1 (Unlimited)

Insulated Gate BIP Transistors

940W

-

160N65

Single

940W

Standard

N-CHANNEL

2.1V

290A

-

650V

1.7V

400V, 80A, 1 Ω, 15V

2.1V @ 15V, 160A

PT

422nC

800A

52ns/197ns

3.5mJ (on), 1.3mJ (off)

20V

6.5V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

52 ns

197 ns

IXXK110N65B4H1 vs IXXK160N65C4