IXYS IXTY2N100P
- Part Number:
- IXTY2N100P
- Manufacturer:
- IXYS
- Ventron No:
- 2850690-IXTY2N100P
- Description:
- MOSFET N-CH 1000V 2A TO-252
- Datasheet:
- IXTY2N100P
IXYS IXTY2N100P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTY2N100P.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPolar™
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max86W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation86W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5 Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds655pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2A Tc
- Gate Charge (Qg) (Max) @ Vgs24.3nC @ 10V
- Rise Time29ns
- Drain to Source Voltage (Vdss)1000V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)27 ns
- Turn-Off Delay Time80 ns
- Continuous Drain Current (ID)2A
- JEDEC-95 CodeTO-252AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2A
- Drain to Source Breakdown Voltage1kV
- Pulsed Drain Current-Max (IDM)5A
- Avalanche Energy Rating (Eas)150 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTY2N100P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 655pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 5A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTY2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTY2N100P Applications
There are a lot of IXYS
IXTY2N100P applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 655pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 2A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 5A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTY2N100P Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 5A.
a 1000V drain to source voltage (Vdss)
IXTY2N100P Applications
There are a lot of IXYS
IXTY2N100P applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXTY2N100P More Descriptions
N-Channel 1000 V 2 A 7.5 O Surface Mount Polar Power Mosfet - TO-252-2
MOSFET N-CH 1000V 2A TO-252
MOSFET N-CH 1000V 2A TO-252
The three parts on the right have similar specifications to IXTY2N100P.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeFactory Lead TimeResistanceVoltage - Rated DCCurrent RatingSupplier Device PackageNumber of PinsView Compare
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IXTY2N100PSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJTubePolar™2008e3yesActive1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIED4R-PSSO-G2Not Qualified186W TcSingleENHANCEMENT MODE86WDRAINN-ChannelSWITCHING7.5 Ω @ 500mA, 10V4.5V @ 100μA655pF @ 25V2A Tc24.3nC @ 10V29ns1000V10V±20V27 ns80 ns2ATO-252AA20V2A1kV5A150 mJROHS3 CompliantLead Free-------
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJTubePolarHV™2006e3yesObsolete1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIED4R-PSSO-G2Not Qualified170W TcSingleENHANCEMENT MODE70WDRAINN-ChannelSWITCHING2.9 Ω @ 500mA, 10V5.5V @ 50μA411pF @ 25V3A Tc9.8nC @ 10V25ns-10V±30V22 ns58 ns3ATO-252AA30V3A600V6A100 mJRoHS CompliantLead Free8 Weeks2.9Ohm600V3A--
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63--Tube----Active1 (Unlimited)----MOSFET (Metal Oxide)------------N-Channel----15A Tc--200V----15A------ROHS3 Compliant-----TO-252, (D-Pak)-
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Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63SILICON-55°C~150°C TJTubePolarHV™2006-yesObsolete1 (Unlimited)2-AVALANCHE RATED-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDNOT SPECIFIED4R-PSSO-G2Not Qualified155W TcSingleENHANCEMENT MODE55WDRAINN-ChannelSWITCHING3.75 Ω @ 500mA, 10V5.5V @ 25μA240pF @ 25V2.4A Tc6.1nC @ 10V29ns-10V±30V28 ns65 ns2.4ATO-252AA30V-500V4.5A100 mJRoHS CompliantLead Free8 Weeks-500V2A-3
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