IXYS IXTP76N25T
- Part Number:
- IXTP76N25T
- Manufacturer:
- IXYS
- Ventron No:
- 4538942-IXTP76N25T
- Description:
- MOSFET N-CH 250V 76A TO-220
- Datasheet:
- IXTP76N25T
IXYS IXTP76N25T technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTP76N25T.
- Factory Lead Time26 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max460W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation460W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs39m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C76A Tc
- Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)29 ns
- Turn-Off Delay Time56 ns
- Continuous Drain Current (ID)76A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.039Ohm
- Drain to Source Breakdown Voltage250V
- Pulsed Drain Current-Max (IDM)170A
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTP76N25T Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.A device's maximum input capacitance is 4500pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 76A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=250V, and this device has a drain-to-source breakdown voltage of 250V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Its maximum pulsed drain current is 170A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP76N25T Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 76A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 170A.
IXTP76N25T Applications
There are a lot of IXYS
IXTP76N25T applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IXTP76N25T More Descriptions
MOSFET N-CH 250V 76A TO220AB
OEMs, CMs ONLY (NO BROKERS)
Contact for details
OEMs, CMs ONLY (NO BROKERS)
Contact for details
The three parts on the right have similar specifications to IXTP76N25T.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeNumber of PinsSeriesTerminal PositionOperating Temperature (Max)ConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinDrain Current-Max (Abs) (ID)View Compare
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IXTP76N25T26 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTube2007e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDunknownNOT SPECIFIED3R-PSFM-T3Not Qualified1460W TcSingleENHANCEMENT MODE460WDRAINN-ChannelSWITCHING39m Ω @ 500mA, 10V5V @ 1mA4500pF @ 25V76A Tc92nC @ 10V25ns10V±30V29 ns56 ns76ATO-220AB30V0.039Ohm250V170A1500 mJROHS3 CompliantLead Free---------
-
-Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTube2006e3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3-Not Qualified1430W TcSingleENHANCEMENT MODE430WDRAINN-ChannelSWITCHING4m Ω @ 25A, 10V4V @ 250μA7200pF @ 25V220A Tc158nC @ 10V62ns10V±20V53 ns53 ns220ATO-220AB-0.004Ohm55V600A1000 mJRoHS Compliant-3TrenchMV™------
-
-Through HoleThrough HoleTO-220-3SILICON-Tube2012e3yesObsolete1 (Unlimited)3EAR99PURE TIN--MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified1--ENHANCEMENT MODE-DRAINN-ChannelSWITCHING-4V @ 1mA-180A Tc------180ATO-220AB-0.0051Ohm-600A450 mJRoHS Compliant---SINGLE175°CSINGLE WITH BUILT-IN DIODE55V55V-
-
17 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTube2008e1yesActive1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED3R-PSFM-T3Not Qualified186W TcSingleENHANCEMENT MODE86WDRAINN-ChannelSWITCHING7.5 Ω @ 500mA, 10V4.5V @ 100μA655pF @ 25V2A Tc24.3nC @ 10V29ns10V±20V27 ns80 ns2ATO-220AB20V-1kV5A-ROHS3 CompliantLead Free-Polar™---1000V-2A
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