IXTH11P50

IXYS IXTH11P50

Part Number:
IXTH11P50
Manufacturer:
IXYS
Ventron No:
2851097-IXTH11P50
Description:
MOSFET P-CH 500V 11A TO-247AD
ECAD Model:
Datasheet:
IXT(H,T)11P50

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Specifications
IXYS IXTH11P50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTH11P50.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2005
  • Pbfree Code
    yes
  • Part Status
    Active
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    750MOhm
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -11A
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    750m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    27ns
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    11A
  • JEDEC-95 Code
    TO-247AD
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -500V
  • Pulsed Drain Current-Max (IDM)
    44A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXTH11P50 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 44A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXTH11P50 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)


IXTH11P50 Applications
There are a lot of IXYS
IXTH11P50 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXTH11P50 More Descriptions
Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD
Trans MOSFET P-CH Si 500V 11A 3-Pin(3 Tab) TO-247AD
P-Ch 500V 11A 300W 0,75R TO247AD
Product Comparison
The three parts on the right have similar specifications to IXTH11P50.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    JESD-609 Code
    Moisture Sensitivity Level (MSL)
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    View Compare
  • IXTH11P50
    IXTH11P50
    17 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2005
    yes
    Active
    3
    EAR99
    750MOhm
    AVALANCHE RATED
    Other Transistors
    -500V
    MOSFET (Metal Oxide)
    -11A
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    P-Channel
    SWITCHING
    750m Ω @ 5.5A, 10V
    5V @ 250μA
    4700pF @ 25V
    11A Tc
    130nC @ 10V
    27ns
    500V
    10V
    ±20V
    35 ns
    35 ns
    11A
    TO-247AD
    20V
    -500V
    44A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXTH220N055T
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    2006
    yes
    Obsolete
    3
    EAR99
    -
    AVALANCHE RATED
    -
    -
    MOSFET (Metal Oxide)
    -
    3
    1
    430W Tc
    Single
    ENHANCEMENT MODE
    430W
    DRAIN
    N-Channel
    SWITCHING
    4m Ω @ 25A, 10V
    4V @ 250μA
    7200pF @ 25V
    220A Tc
    158nC @ 10V
    62ns
    -
    10V
    ±20V
    53 ns
    53 ns
    220A
    TO-247AD
    -
    55V
    600A
    -
    RoHS Compliant
    -
    TrenchMV™
    e1
    1 (Unlimited)
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    0.004Ohm
    1000 mJ
  • IXTH30N50P
    28 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    yes
    Active
    3
    -
    -
    AVALANCHE RATED
    -
    500V
    MOSFET (Metal Oxide)
    30A
    3
    1
    460W Tc
    Single
    ENHANCEMENT MODE
    460W
    DRAIN
    N-Channel
    SWITCHING
    200m Ω @ 15A, 10V
    5V @ 250μA
    4150pF @ 25V
    30A Tc
    70nC @ 10V
    27ns
    -
    10V
    ±30V
    21 ns
    75 ns
    30A
    TO-247AD
    30V
    500V
    75A
    -
    ROHS3 Compliant
    Lead Free
    PolarHV™
    -
    1 (Unlimited)
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    Not Qualified
    0.2Ohm
    1200 mJ
  • IXTH20N60
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    yes
    Active
    3
    -
    350mOhm
    -
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    20A
    3
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    ISOLATED
    N-Channel
    SWITCHING
    350m Ω @ 10A, 10V
    4.5V @ 250μA
    4500pF @ 25V
    20A Tc
    170nC @ 10V
    43ns
    -
    10V
    ±20V
    40 ns
    70 ns
    20A
    TO-247AD
    20V
    600V
    80A
    No
    ROHS3 Compliant
    Lead Free
    MegaMOS™
    -
    Not Applicable
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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