IXYS IXTH11P50
- Part Number:
- IXTH11P50
- Manufacturer:
- IXYS
- Ventron No:
- 2851097-IXTH11P50
- Description:
- MOSFET P-CH 500V 11A TO-247AD
- Datasheet:
- IXT(H,T)11P50
IXYS IXTH11P50 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTH11P50.
- Factory Lead Time17 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2005
- Pbfree Codeyes
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Resistance750MOhm
- Additional FeatureAVALANCHE RATED
- SubcategoryOther Transistors
- Voltage - Rated DC-500V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-11A
- Pin Count3
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs750m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)11A
- JEDEC-95 CodeTO-247AD
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-500V
- Pulsed Drain Current-Max (IDM)44A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXTH11P50 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 44A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH11P50 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)
IXTH11P50 Applications
There are a lot of IXYS
IXTH11P50 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -500V.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 44A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXTH11P50 Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 44A.
a 500V drain to source voltage (Vdss)
IXTH11P50 Applications
There are a lot of IXYS
IXTH11P50 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IXTH11P50 More Descriptions
Single P-Channel 500 V 750 mOhm 300 W Power Mosfet - TO-247 AD
Trans MOSFET P-CH Si 500V 11A 3-Pin(3 Tab) TO-247AD
P-Ch 500V 11A 300W 0,75R TO247AD
Trans MOSFET P-CH Si 500V 11A 3-Pin(3 Tab) TO-247AD
P-Ch 500V 11A 300W 0,75R TO247AD
The three parts on the right have similar specifications to IXTH11P50.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusNumber of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeSeriesJESD-609 CodeMoisture Sensitivity Level (MSL)Terminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)View Compare
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IXTH11P5017 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTube2005yesActive3EAR99750MOhmAVALANCHE RATEDOther Transistors-500VMOSFET (Metal Oxide)-11A31300W TcSingleENHANCEMENT MODE300WDRAINP-ChannelSWITCHING750m Ω @ 5.5A, 10V5V @ 250μA4700pF @ 25V11A Tc130nC @ 10V27ns500V10V±20V35 ns35 ns11ATO-247AD20V-500V44ANoROHS3 CompliantLead Free-----------
-
-Through HoleThrough HoleTO-247-3-SILICON-55°C~175°C TJTube2006yesObsolete3EAR99-AVALANCHE RATED--MOSFET (Metal Oxide)-31430W TcSingleENHANCEMENT MODE430WDRAINN-ChannelSWITCHING4m Ω @ 25A, 10V4V @ 250μA7200pF @ 25V220A Tc158nC @ 10V62ns-10V±20V53 ns53 ns220ATO-247AD-55V600A-RoHS Compliant-TrenchMV™e11 (Unlimited)Tin/Silver/Copper (Sn/Ag/Cu)NOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified0.004Ohm1000 mJ
-
28 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTube2006yesActive3--AVALANCHE RATED-500VMOSFET (Metal Oxide)30A31460W TcSingleENHANCEMENT MODE460WDRAINN-ChannelSWITCHING200m Ω @ 15A, 10V5V @ 250μA4150pF @ 25V30A Tc70nC @ 10V27ns-10V±30V21 ns75 ns30ATO-247AD30V500V75A-ROHS3 CompliantLead FreePolarHV™-1 (Unlimited)-NOT SPECIFIEDNOT SPECIFIED-Not Qualified0.2Ohm1200 mJ
-
8 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTube2000yesActive3-350mOhm-FET General Purpose Power600VMOSFET (Metal Oxide)20A31300W TcSingleENHANCEMENT MODE300WISOLATEDN-ChannelSWITCHING350m Ω @ 10A, 10V4.5V @ 250μA4500pF @ 25V20A Tc170nC @ 10V43ns-10V±20V40 ns70 ns20ATO-247AD20V600V80ANoROHS3 CompliantLead FreeMegaMOS™-Not Applicable-------
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