IXGH24N170

IXYS IXGH24N170

Part Number:
IXGH24N170
Manufacturer:
IXYS
Ventron No:
3554878-IXGH24N170
Description:
IGBT 1700V 50A 250W TO247AD
ECAD Model:
Datasheet:
IXGH24N170

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Specifications
IXYS IXGH24N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH24N170.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    250W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*24N170
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    250W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    50A
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    2.5V
  • Turn On Time
    105 ns
  • Test Condition
    1360V, 50A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.3V @ 15V, 24A
  • Turn Off Time-Nom (toff)
    560 ns
  • IGBT Type
    NPT
  • Gate Charge
    106nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    42ns/200ns
  • Switching Energy
    8mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    500ns
  • Height
    21.46mm
  • Length
    16.26mm
  • Width
    5.3mm
  • RoHS Status
    ROHS3 Compliant
Description
IXGH24N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH24N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH24N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH24N170 More Descriptions
Trans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin(3 Tab) TO-247AD
Insulated Gate Bipolar Transistor, 50A I(C), 1700V V(BR)CES, N-Channel, TO-247AD
Igbt, Single, N-Ch, 1.7Kv, 50A, To-247; Dc Collector Current:50A; Collector Emitter Saturation Voltage Vce(On):2.5V; Power Dissipation Pd:250W; Collector Emitter Voltage V(Br)Ceo:1.7Kv; Transistor Case Style:To-247; No. Of Rohs Compliant: Yes |Ixys Semiconductor IXGH24N170
Product Comparison
The three parts on the right have similar specifications to IXGH24N170.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    RoHS Status
    Factory Lead Time
    Power - Max
    Radiation Hardening
    Lead Free
    JESD-30 Code
    Reverse Recovery Time
    Current - Collector (Ic) (Max)
    View Compare
  • IXGH24N170
    IXGH24N170
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    250W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*24N170
    3
    Not Qualified
    1
    Single
    250W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.7kV
    50A
    TO-247AD
    1.7kV
    1700V
    2.5V
    105 ns
    1360V, 50A, 5 Ω, 15V
    3.3V @ 15V, 24A
    560 ns
    NPT
    106nC
    150A
    42ns/200ns
    8mJ (off)
    20V
    5V
    500ns
    21.46mm
    16.26mm
    5.3mm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH17N100
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    150W
    -
    -
    IXG*17N100
    3
    -
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1kV
    34A
    TO-247AD
    1kV
    1000V
    -
    300 ns
    800V, 17A, 82 Ω, 15V
    3.5V @ 15V, 17A
    1900 ns
    -
    100nC
    68A
    100ns/500ns
    3mJ (off)
    20V
    5V
    -
    -
    -
    -
    ROHS3 Compliant
    18 Weeks
    150W
    No
    Lead Free
    -
    -
    -
  • IXGH16N170AH1
    Through Hole
    Through Hole
    TO-247-3
    -
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    2012
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    Insulated Gate BIP Transistors
    190W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*16N170
    3
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    MOTOR CONTROL
    N-CHANNEL
    1.7kV
    16A
    TO-247AD
    1.7kV
    1700V
    -
    97 ns
    850V, 16A, 10 Ω, 15V
    5V @ 15V, 11A
    330 ns
    NPT
    65nC
    40A
    36ns/160ns
    900μJ (off)
    20V
    5V
    150ns
    -
    -
    -
    RoHS Compliant
    8 Weeks
    190W
    -
    Lead Free
    R-PSFM-T3
    230 ns
    -
  • IXGH240N30PB
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -
    -
    Tube
    -
    -
    -
    Active
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Standard
    -
    -
    -
    48A
    -
    300V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    48A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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