IXGH17N100AU1

IXYS IXGH17N100AU1

Part Number:
IXGH17N100AU1
Manufacturer:
IXYS
Ventron No:
3072265-IXGH17N100AU1
Description:
IGBT 1000V 34A 150W TO247AD
ECAD Model:
Datasheet:
IXGH17N100AU1

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Specifications
IXYS IXGH17N100AU1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGH17N100AU1.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    6.500007g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • Published
    1997
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Number of Terminations
    3
  • Additional Feature
    HIGH SPEED
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    1kV
  • Max Power Dissipation
    150W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Current Rating
    34A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*17N100
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Turn On Delay Time
    100 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    200ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    500 ns
  • Collector Emitter Voltage (VCEO)
    4V
  • Max Collector Current
    34A
  • Reverse Recovery Time
    50ns
  • JEDEC-95 Code
    TO-247AD
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Turn On Time
    300 ns
  • Test Condition
    800V, 17A, 82 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    4V @ 15V, 17A
  • Turn Off Time-Nom (toff)
    1450 ns
  • Gate Charge
    100nC
  • Current - Collector Pulsed (Icm)
    68A
  • Td (on/off) @ 25°C
    100ns/500ns
  • Switching Energy
    3mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • VCEsat-Max
    4 V
  • Gate-Emitter Thr Voltage-Max
    5V
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXGH17N100AU1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGH17N100AU1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGH17N100AU1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGH17N100AU1 More Descriptions
IGBT 1000V 34A 150W TO247AD
IXYS Power Transistor Module
OEMs, CMs ONLY (NO BROKERS)
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGH17N100AU1.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    VCEsat-Max
    Gate-Emitter Thr Voltage-Max
    RoHS Status
    Lead Free
    Factory Lead Time
    JESD-609 Code
    Terminal Finish
    Power - Max
    Series
    JESD-30 Code
    Power Dissipation
    Collector Emitter Saturation Voltage
    IGBT Type
    Rise Time-Max
    Fall Time-Max (tf)
    View Compare
  • IXGH17N100AU1
    IXGH17N100AU1
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Bulk
    1997
    yes
    Obsolete
    Not Applicable
    3
    HIGH SPEED
    Insulated Gate BIP Transistors
    1kV
    150W
    NOT SPECIFIED
    34A
    NOT SPECIFIED
    IXG*17N100
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    100 ns
    POWER CONTROL
    200ns
    N-CHANNEL
    500 ns
    4V
    34A
    50ns
    TO-247AD
    1kV
    1000V
    300 ns
    800V, 17A, 82 Ω, 15V
    4V @ 15V, 17A
    1450 ns
    100nC
    68A
    100ns/500ns
    3mJ (off)
    20V
    4 V
    5V
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGH25N120
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    1997
    yes
    Active
    1 (Unlimited)
    3
    -
    Insulated Gate BIP Transistors
    -
    200W
    260
    -
    35
    -
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    1.2kV
    50A
    -
    TO-247AD
    1.2kV
    1200V
    350 ns
    960V, 25A, 33 Ω, 15V
    3V @ 15V, 25A
    1920 ns
    130nC
    100A
    100ns/650ns
    11mJ (off)
    20V
    3 V
    6V
    ROHS3 Compliant
    -
    8 Weeks
    e3
    Matte Tin (Sn)
    200W
    -
    -
    -
    -
    -
    -
    -
  • IXGH20N140C3H1
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2010
    yes
    Obsolete
    1 (Unlimited)
    3
    ULTRA FAST
    Insulated Gate BIP Transistors
    -
    250W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    -
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    19 ns
    POWER CONTROL
    -
    N-CHANNEL
    110 ns
    5V
    42A
    70ns
    -
    1.4kV
    1400V
    35 ns
    700V, 20A, 5 Ω, 15V
    5V @ 15V, 20A
    524 ns
    88nC
    108A
    19ns/110ns
    1.35mJ (on), 440μJ (off)
    20V
    -
    5V
    RoHS Compliant
    Lead Free
    -
    e1
    Tin/Silver/Copper (Sn/Ag/Cu)
    -
    GenX3™
    R-PSFM-T3
    250W
    4V
    PT
    -
    -
  • IXGH20N100
    Through Hole
    Through Hole
    TO-247-3
    3
    6.500007g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    yes
    Active
    1 (Unlimited)
    3
    -
    Insulated Gate BIP Transistors
    -
    150W
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*20N100
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    1kV
    40A
    -
    TO-247AD
    1kV
    1000V
    30 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    700 ns
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    -
    -
    5V
    ROHS3 Compliant
    -
    -
    -
    -
    150W
    -
    -
    -
    -
    PT
    200ns
    2000ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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