IXFT50N20

IXYS IXFT50N20

Part Number:
IXFT50N20
Manufacturer:
IXYS
Ventron No:
2487713-IXFT50N20
Description:
MOSFET N-CH 200V 50A TO-268
ECAD Model:
Datasheet:
IXF(H,M,T)xxN20

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Specifications
IXYS IXFT50N20 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFT50N20.
  • Factory Lead Time
    26 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Resistance
    45MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    2
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 25A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    220nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    72 ns
  • Continuous Drain Current (ID)
    50A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Pulsed Drain Current-Max (IDM)
    200A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFT50N20 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

IXFT50N20 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.


IXFT50N20 Applications
There are a lot of IXYS
IXFT50N20 applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFT50N20 More Descriptions
Single N-Channel 200 V 45 mOhm 300 W Power Mosfet - TO-268
Trans MOSFET N-CH Si 200V 50A 3-Pin(2 Tab) TO-268
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFT50N20.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Additional Feature
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    ECCN Code
    Terminal Position
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • IXFT50N20
    IXFT50N20
    26 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    45MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    2
    R-PSSO-G2
    Not Qualified
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    DRAIN
    N-Channel
    SWITCHING
    45m Ω @ 25A, 10V
    4V @ 4mA
    4400pF @ 25V
    50A Tc
    220nC @ 10V
    15ns
    10V
    ±20V
    16 ns
    72 ns
    50A
    20V
    200V
    200A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFT32N50
    -
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    360W
    DRAIN
    N-Channel
    SWITCHING
    150m Ω @ 15A, 10V
    4V @ 4mA
    5700pF @ 25V
    32A Tc
    300nC @ 10V
    42ns
    10V
    ±20V
    26 ns
    110 ns
    32A
    20V
    500V
    128A
    RoHS Compliant
    Lead Free
    AVALANCHE RATED
    0.15Ohm
    1500 mJ
    -
    -
    -
    -
    -
  • IXFT30N50Q
    -
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    -
    MOSFET (Metal Oxide)
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    4
    R-PSSO-G2
    Not Qualified
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    360W
    DRAIN
    N-Channel
    SWITCHING
    160m Ω @ 15A, 10V
    4.5V @ 4mA
    4925pF @ 25V
    30A Tc
    190nC @ 10V
    42ns
    10V
    ±20V
    20 ns
    75 ns
    30A
    20V
    500V
    128A
    RoHS Compliant
    -
    AVALANCHE RATED
    0.16Ohm
    1500 mJ
    -
    -
    -
    -
    -
  • IXFT150N20T
    26 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, TrenchT2™
    2011
    e3
    -
    Active
    1 (Unlimited)
    2
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    -
    not_compliant
    -
    4
    R-PSSO-G2
    -
    1
    890W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    SWITCHING
    15m Ω @ 75A, 10V
    5V @ 4mA
    11700pF @ 25V
    150A Tc
    177nC @ 10V
    -
    10V
    ±20V
    -
    -
    150A
    -
    -
    375A
    ROHS3 Compliant
    Lead Free
    AVALANCHE RATED
    0.015Ohm
    1500 mJ
    EAR99
    SINGLE
    SINGLE WITH BUILT-IN DIODE
    200V
    200V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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