IXYS IXFT50N20
- Part Number:
- IXFT50N20
- Manufacturer:
- IXYS
- Ventron No:
- 2487713-IXFT50N20
- Description:
- MOSFET N-CH 200V 50A TO-268
- Datasheet:
- IXF(H,M,T)xxN20
IXYS IXFT50N20 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFT50N20.
- Factory Lead Time26 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads Tab), TO-268AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Resistance45MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C50A Tc
- Gate Charge (Qg) (Max) @ Vgs220nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)16 ns
- Turn-Off Delay Time72 ns
- Continuous Drain Current (ID)50A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)200A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFT50N20 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IXFT50N20 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.
IXFT50N20 Applications
There are a lot of IXYS
IXFT50N20 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 50A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Peak drain current for this device is 200A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
IXFT50N20 Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 200A.
IXFT50N20 Applications
There are a lot of IXYS
IXFT50N20 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IXFT50N20 More Descriptions
Single N-Channel 200 V 45 mOhm 300 W Power Mosfet - TO-268
Trans MOSFET N-CH Si 200V 50A 3-Pin(2 Tab) TO-268
Contact for details
Trans MOSFET N-CH Si 200V 50A 3-Pin(2 Tab) TO-268
Contact for details
The three parts on the right have similar specifications to IXFT50N20.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishSubcategoryTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)RoHS StatusLead FreeAdditional FeatureDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)ECCN CodeTerminal PositionConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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IXFT50N2026 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2000e3yesActive1 (Unlimited)245MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED2R-PSSO-G2Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-ChannelSWITCHING45m Ω @ 25A, 10V4V @ 4mA4400pF @ 25V50A Tc220nC @ 10V15ns10V±20V16 ns72 ns50A20V200V200AROHS3 CompliantLead Free---------
-
-Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2000e3yesObsolete1 (Unlimited)2-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIED4R-PSSO-G2Not Qualified1360W TcSingleENHANCEMENT MODE360WDRAINN-ChannelSWITCHING150m Ω @ 15A, 10V4V @ 4mA5700pF @ 25V32A Tc300nC @ 10V42ns10V±20V26 ns110 ns32A20V500V128ARoHS CompliantLead FreeAVALANCHE RATED0.15Ohm1500 mJ-----
-
-Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2001e3yesObsolete1 (Unlimited)2-Matte Tin (Sn)-MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIED4R-PSSO-G2Not Qualified1360W TcSingleENHANCEMENT MODE360WDRAINN-ChannelSWITCHING160m Ω @ 15A, 10V4.5V @ 4mA4925pF @ 25V30A Tc190nC @ 10V42ns10V±20V20 ns75 ns30A20V500V128ARoHS Compliant-AVALANCHE RATED0.16Ohm1500 mJ-----
-
26 WeeksSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™, TrenchT2™2011e3-Active1 (Unlimited)2-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)GULL WING-not_compliant-4R-PSSO-G2-1890W Tc-ENHANCEMENT MODE-DRAINN-ChannelSWITCHING15m Ω @ 75A, 10V5V @ 4mA11700pF @ 25V150A Tc177nC @ 10V-10V±20V--150A--375AROHS3 CompliantLead FreeAVALANCHE RATED0.015Ohm1500 mJEAR99SINGLESINGLE WITH BUILT-IN DIODE200V200V
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