IXYS IXFT20N80Q
- Part Number:
- IXFT20N80Q
- Manufacturer:
- IXYS
- Ventron No:
- 2851189-IXFT20N80Q
- Description:
- MOSFET N-CH 800V 20A TO-268
- Datasheet:
- IXFT20N80Q
IXYS IXFT20N80Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFT20N80Q.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-268-3, D3Pak (2 Leads Tab), TO-268AA
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max360W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation360W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs420m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds5100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Rise Time27ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)14 ns
- Turn-Off Delay Time74 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.42Ohm
- Drain to Source Breakdown Voltage800V
- Pulsed Drain Current-Max (IDM)80A
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IXFT20N80Q Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 74 ns.Peak drain current is 80A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT20N80Q Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
IXFT20N80Q Applications
There are a lot of IXYS
IXFT20N80Q applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 74 ns.Peak drain current is 80A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFT20N80Q Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.
IXFT20N80Q Applications
There are a lot of IXYS
IXFT20N80Q applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXFT20N80Q More Descriptions
Trans MOSFET N-CH 800V 20A 3-Pin(2 Tab) TO-268
Contact for details
Contact for details
The three parts on the right have similar specifications to IXFT20N80Q.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal FormPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusTransistor ApplicationAvalanche Energy Rating (Eas)Factory Lead TimeECCN CodeTerminal PositionReach Compliance CodeConfigurationDrain to Source Voltage (Vdss)DS Breakdown Voltage-MinView Compare
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IXFT20N80QSurface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2002e3yesObsolete1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)GULL WING4R-PSSO-G21360W TcSingleENHANCEMENT MODE360WDRAINN-Channel420m Ω @ 10A, 10V4.5V @ 4mA5100pF @ 25V20A Tc200nC @ 10V27ns10V±20V14 ns74 ns20A20V0.42Ohm800V80ANoRoHS CompliantLead Free-------------
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Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2001e3yesObsolete1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATED-MOSFET (Metal Oxide)GULL WING4R-PSSO-G21360W TcSingleENHANCEMENT MODE360WDRAINN-Channel160m Ω @ 15A, 10V4.5V @ 4mA4925pF @ 25V30A Tc190nC @ 10V42ns10V±20V20 ns75 ns30A20V0.16Ohm500V128A-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIEDNot QualifiedSWITCHING1500 mJ-------
-
Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™, TrenchT2™2011e3-Active1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)GULL WING4R-PSSO-G21890W Tc-ENHANCEMENT MODE-DRAINN-Channel15m Ω @ 75A, 10V5V @ 4mA11700pF @ 25V150A Tc177nC @ 10V-10V±20V--150A-0.015Ohm-375A-ROHS3 CompliantLead Free---SWITCHING1500 mJ26 WeeksEAR99SINGLEnot_compliantSINGLE WITH BUILT-IN DIODE200V200V
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Surface MountSurface MountTO-268-3, D3Pak (2 Leads Tab), TO-268AASILICON-55°C~150°C TJTubeHiPerFET™2000e3yesActive1 (Unlimited)2Matte Tin (Sn)AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)GULL WING4R-PSSO-G21360W TcSingleENHANCEMENT MODE360WDRAINN-Channel160m Ω @ 15A, 10V4V @ 4mA5700pF @ 25V30A Tc300nC @ 10V42ns10V±20V26 ns110 ns30A20V0.15Ohm500V120A-ROHS3 Compliant-NOT SPECIFIEDNOT SPECIFIEDNot QualifiedSWITCHING1500 mJ-------
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