IXFT20N80Q

IXYS IXFT20N80Q

Part Number:
IXFT20N80Q
Manufacturer:
IXYS
Ventron No:
2851189-IXFT20N80Q
Description:
MOSFET N-CH 800V 20A TO-268
ECAD Model:
Datasheet:
IXFT20N80Q

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Specifications
IXYS IXFT20N80Q technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFT20N80Q.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    360W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    360W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    420m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    5100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    200nC @ 10V
  • Rise Time
    27ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    14 ns
  • Turn-Off Delay Time
    74 ns
  • Continuous Drain Current (ID)
    20A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.42Ohm
  • Drain to Source Breakdown Voltage
    800V
  • Pulsed Drain Current-Max (IDM)
    80A
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFT20N80Q Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5100pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 74 ns.Peak drain current is 80A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFT20N80Q Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 74 ns
based on its rated peak drain current 80A.


IXFT20N80Q Applications
There are a lot of IXYS
IXFT20N80Q applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IXFT20N80Q More Descriptions
Trans MOSFET N-CH 800V 20A 3-Pin(2 Tab) TO-268
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFT20N80Q.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Form
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Radiation Hardening
    RoHS Status
    Lead Free
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Transistor Application
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    ECCN Code
    Terminal Position
    Reach Compliance Code
    Configuration
    Drain to Source Voltage (Vdss)
    DS Breakdown Voltage-Min
    View Compare
  • IXFT20N80Q
    IXFT20N80Q
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2002
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    360W
    DRAIN
    N-Channel
    420m Ω @ 10A, 10V
    4.5V @ 4mA
    5100pF @ 25V
    20A Tc
    200nC @ 10V
    27ns
    10V
    ±20V
    14 ns
    74 ns
    20A
    20V
    0.42Ohm
    800V
    80A
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFT30N50Q
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2001
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    Matte Tin (Sn)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    360W
    DRAIN
    N-Channel
    160m Ω @ 15A, 10V
    4.5V @ 4mA
    4925pF @ 25V
    30A Tc
    190nC @ 10V
    42ns
    10V
    ±20V
    20 ns
    75 ns
    30A
    20V
    0.16Ohm
    500V
    128A
    -
    RoHS Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SWITCHING
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
  • IXFT150N20T
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, TrenchT2™
    2011
    e3
    -
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    890W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    N-Channel
    15m Ω @ 75A, 10V
    5V @ 4mA
    11700pF @ 25V
    150A Tc
    177nC @ 10V
    -
    10V
    ±20V
    -
    -
    150A
    -
    0.015Ohm
    -
    375A
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    SWITCHING
    1500 mJ
    26 Weeks
    EAR99
    SINGLE
    not_compliant
    SINGLE WITH BUILT-IN DIODE
    200V
    200V
  • IXFT30N50
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    4
    R-PSSO-G2
    1
    360W Tc
    Single
    ENHANCEMENT MODE
    360W
    DRAIN
    N-Channel
    160m Ω @ 15A, 10V
    4V @ 4mA
    5700pF @ 25V
    30A Tc
    300nC @ 10V
    42ns
    10V
    ±20V
    26 ns
    110 ns
    30A
    20V
    0.15Ohm
    500V
    120A
    -
    ROHS3 Compliant
    -
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    SWITCHING
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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