IXFJ40N30

IXYS IXFJ40N30

Part Number:
IXFJ40N30
Manufacturer:
IXYS
Ventron No:
3586699-IXFJ40N30
Description:
MOSFET N-CH 300V 40A TO-220
ECAD Model:
Datasheet:
IXFJ40N30

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Specifications
IXYS IXFJ40N30 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFJ40N30.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3, Short Tab
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    80MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    200nC @ 10V
  • Rise Time
    60ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    45 ns
  • Turn-Off Delay Time
    75 ns
  • Continuous Drain Current (ID)
    40A
  • JEDEC-95 Code
    TO-268AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    300V
  • Pulsed Drain Current-Max (IDM)
    160A
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IXFJ40N30 Overview
A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).

IXFJ40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160A.


IXFJ40N30 Applications
There are a lot of IXYS
IXFJ40N30 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IXFJ40N30 More Descriptions
MOSFET N-CH 300V 40A TO-220
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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