IXFC80N08

IXYS IXFC80N08

Part Number:
IXFC80N08
Manufacturer:
IXYS
Ventron No:
3586700-IXFC80N08
Description:
MOSFET N-CH 80V 80A ISOPLUS220
ECAD Model:
Datasheet:
IXFC80N08/85

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Specifications
IXYS IXFC80N08 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFC80N08.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS220™
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2003
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    230W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    230W
  • Case Connection
    ISOLATED
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11m Ω @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    4800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    180nC @ 10V
  • Rise Time
    75ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    95 ns
  • Continuous Drain Current (ID)
    80A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.009Ohm
  • Drain to Source Breakdown Voltage
    80V
  • Pulsed Drain Current-Max (IDM)
    75A
  • Avalanche Energy Rating (Eas)
    1000 mJ
  • RoHS Status
    RoHS Compliant
Description
IXFC80N08 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 95 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IXFC80N08 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 75A.


IXFC80N08 Applications
There are a lot of IXYS
IXFC80N08 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFC80N08 More Descriptions
Trans MOSFET N-CH 80V 80A 3-Pin(3 Tab) ISOPLUS 220
MOSFET N-CH 80V 80A ISOPLUS220
Product Comparison
The three parts on the right have similar specifications to IXFC80N08.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    RoHS Status
    Resistance
    Additional Feature
    Lead Free
    JESD-30 Code
    Threshold Voltage
    Isolation Voltage
    REACH SVHC
    Voltage - Rated DC
    Current Rating
    View Compare
  • IXFC80N08
    IXFC80N08
    Through Hole
    Through Hole
    ISOPLUS220™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    ISOLATED
    N-Channel
    SWITCHING
    11m Ω @ 40A, 10V
    4V @ 4mA
    4800pF @ 25V
    80A Tc
    180nC @ 10V
    75ns
    10V
    ±20V
    31 ns
    95 ns
    80A
    20V
    0.009Ohm
    80V
    75A
    1000 mJ
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFC26N50
    Through Hole
    Through Hole
    ISOPLUS220™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2003
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    230W Tc
    Single
    ENHANCEMENT MODE
    230W
    ISOLATED
    N-Channel
    SWITCHING
    200m Ω @ 13A, 10V
    4V @ 4mA
    4200pF @ 25V
    23A Tc
    135nC @ 10V
    33ns
    10V
    ±20V
    30 ns
    65 ns
    23A
    20V
    -
    500V
    92A
    -
    RoHS Compliant
    200mOhm
    AVALANCHE RATED
    Lead Free
    -
    -
    -
    -
    -
    -
  • IXFC110N10P
    Through Hole
    Through Hole
    ISOPLUS220™
    220
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    120W Tc
    Single
    ENHANCEMENT MODE
    120W
    ISOLATED
    N-Channel
    SWITCHING
    17m Ω @ 55A, 10V
    5V @ 4mA
    3550pF @ 25V
    60A Tc
    110nC @ 10V
    25ns
    10V
    ±20V
    25 ns
    65 ns
    60A
    20V
    0.017Ohm
    100V
    250A
    1000 mJ
    RoHS Compliant
    -
    AVALANCHE RATED, UL RECOGNIZED
    -
    R-PSIP-T3
    5V
    2.5kV
    No SVHC
    -
    -
  • IXFC30N60P
    Through Hole
    Through Hole
    ISOPLUS220™
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™, PolarHT™
    2006
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    166W Tc
    Single
    ENHANCEMENT MODE
    166W
    ISOLATED
    N-Channel
    SWITCHING
    250m Ω @ 15A, 10V
    5V @ 4mA
    3820pF @ 25V
    15A Tc
    85nC @ 10V
    20ns
    10V
    ±30V
    25 ns
    75 ns
    15A
    30V
    0.25Ohm
    600V
    80A
    1500 mJ
    RoHS Compliant
    -
    AVALANCHE RATED, UL RECOGNIZED
    Lead Free
    -
    -
    -
    -
    600V
    30A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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