IXYS IXFC80N08
- Part Number:
- IXFC80N08
- Manufacturer:
- IXYS
- Ventron No:
- 3586700-IXFC80N08
- Description:
- MOSFET N-CH 80V 80A ISOPLUS220
- Datasheet:
- IXFC80N08/85
IXYS IXFC80N08 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFC80N08.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS220™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2003
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max230W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation230W
- Case ConnectionISOLATED
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time75ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)31 ns
- Turn-Off Delay Time95 ns
- Continuous Drain Current (ID)80A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.009Ohm
- Drain to Source Breakdown Voltage80V
- Pulsed Drain Current-Max (IDM)75A
- Avalanche Energy Rating (Eas)1000 mJ
- RoHS StatusRoHS Compliant
IXFC80N08 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 95 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IXFC80N08 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 75A.
IXFC80N08 Applications
There are a lot of IXYS
IXFC80N08 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4800pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=80V, the drain-source breakdown voltage is 80V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 95 ns.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IXFC80N08 Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 95 ns
based on its rated peak drain current 75A.
IXFC80N08 Applications
There are a lot of IXYS
IXFC80N08 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IXFC80N08 More Descriptions
Trans MOSFET N-CH 80V 80A 3-Pin(3 Tab) ISOPLUS 220
MOSFET N-CH 80V 80A ISOPLUS220
MOSFET N-CH 80V 80A ISOPLUS220
The three parts on the right have similar specifications to IXFC80N08.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusResistanceAdditional FeatureLead FreeJESD-30 CodeThreshold VoltageIsolation VoltageREACH SVHCVoltage - Rated DCCurrent RatingView Compare
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IXFC80N08Through HoleThrough HoleISOPLUS220™3SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1230W TcSingleENHANCEMENT MODE230WISOLATEDN-ChannelSWITCHING11m Ω @ 40A, 10V4V @ 4mA4800pF @ 25V80A Tc180nC @ 10V75ns10V±20V31 ns95 ns80A20V0.009Ohm80V75A1000 mJRoHS Compliant----------
-
Through HoleThrough HoleISOPLUS220™3SILICON-55°C~150°C TJTubeHiPerFET™2003e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1230W TcSingleENHANCEMENT MODE230WISOLATEDN-ChannelSWITCHING200m Ω @ 13A, 10V4V @ 4mA4200pF @ 25V23A Tc135nC @ 10V33ns10V±20V30 ns65 ns23A20V-500V92A-RoHS Compliant200mOhmAVALANCHE RATEDLead Free------
-
Through HoleThrough HoleISOPLUS220™220SILICON-55°C~175°C TJTubeHiPerFET™, PolarHT™2006e1yesObsolete1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1120W TcSingleENHANCEMENT MODE120WISOLATEDN-ChannelSWITCHING17m Ω @ 55A, 10V5V @ 4mA3550pF @ 25V60A Tc110nC @ 10V25ns10V±20V25 ns65 ns60A20V0.017Ohm100V250A1000 mJRoHS Compliant-AVALANCHE RATED, UL RECOGNIZED-R-PSIP-T35V2.5kVNo SVHC--
-
Through HoleThrough HoleISOPLUS220™3SILICON-55°C~150°C TJTubeHiPerFET™, PolarHT™2006e1yesObsolete1 (Unlimited)3-Tin/Silver/Copper (Sn/Ag/Cu)MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1166W TcSingleENHANCEMENT MODE166WISOLATEDN-ChannelSWITCHING250m Ω @ 15A, 10V5V @ 4mA3820pF @ 25V15A Tc85nC @ 10V20ns10V±30V25 ns75 ns15A30V0.25Ohm600V80A1500 mJRoHS Compliant-AVALANCHE RATED, UL RECOGNIZEDLead Free----600V30A
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