IXER60N120

IXYS IXER60N120

Part Number:
IXER60N120
Manufacturer:
IXYS
Ventron No:
3587255-IXER60N120
Description:
IGBT 1200V 95A 375W ISOPLUS247
ECAD Model:
Datasheet:
IXER60N120

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Specifications
IXYS IXER60N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXER60N120.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2006
  • JESD-609 Code
    e1
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    375W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Power Dissipation
    375W
  • Case Connection
    ISOLATED
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Rise Time
    50ns
  • Collector Emitter Voltage (VCEO)
    2.7V
  • Max Collector Current
    95A
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    2.1V
  • Turn On Time
    130 ns
  • Test Condition
    600V, 60A, 22 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 60A
  • Turn Off Time-Nom (toff)
    710 ns
  • IGBT Type
    NPT
  • Gate Charge
    350nC
  • Switching Energy
    7.2mJ (on), 4.8mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
Description
IXER60N120 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXER60N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXER60N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXER60N120 More Descriptions
IXYS SEMICONDUCTOR IXER60N120 IGBT Single Transistor, 95 A, 2.1 V, 375 W, 1.2 kV, ISOPLUS-247, 3 Pins
IGBT, ISOPLUS247; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1200V; Current Ic Continuous a Max:95A; Voltage, Vce Sat Max:2.1V; Power Dissipation:375W; Case Style:ISOPLUS-247; Termination Type:Through Hole; Pin ;RoHS Compliant: Yes
IGBT, ISOPLUS247; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Current Ic Continuous a Max: 95A; Fall Time tf: 50ns; Junction to Case Thermal Resistance A: 0.33°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: Single; Power Dissipation Max: 375W; Rise Time: 50ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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