IXYS IXER60N120
- Part Number:
- IXER60N120
- Manufacturer:
- IXYS
- Ventron No:
- 3587255-IXER60N120
- Description:
- IGBT 1200V 95A 375W ISOPLUS247
- Datasheet:
- IXER60N120
IXYS IXER60N120 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXER60N120.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2006
- JESD-609 Codee1
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation375W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation375W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Rise Time50ns
- Collector Emitter Voltage (VCEO)2.7V
- Max Collector Current95A
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage2.1V
- Turn On Time130 ns
- Test Condition600V, 60A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 60A
- Turn Off Time-Nom (toff)710 ns
- IGBT TypeNPT
- Gate Charge350nC
- Switching Energy7.2mJ (on), 4.8mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IXER60N120 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXER60N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXER60N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXER60N120 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXER60N120. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXER60N120 More Descriptions
IXYS SEMICONDUCTOR IXER60N120 IGBT Single Transistor, 95 A, 2.1 V, 375 W, 1.2 kV, ISOPLUS-247, 3 Pins
IGBT, ISOPLUS247; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1200V; Current Ic Continuous a Max:95A; Voltage, Vce Sat Max:2.1V; Power Dissipation:375W; Case Style:ISOPLUS-247; Termination Type:Through Hole; Pin ;RoHS Compliant: Yes
IGBT, ISOPLUS247; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Current Ic Continuous a Max: 95A; Fall Time tf: 50ns; Junction to Case Thermal Resistance A: 0.33°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: Single; Power Dissipation Max: 375W; Rise Time: 50ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
IGBT, ISOPLUS247; Transistor Type:IGBT; Transistor Polarity:NPN; Voltage, Vces:1200V; Current Ic Continuous a Max:95A; Voltage, Vce Sat Max:2.1V; Power Dissipation:375W; Case Style:ISOPLUS-247; Termination Type:Through Hole; Pin ;RoHS Compliant: Yes
IGBT, ISOPLUS247; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: ISOPLUS-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Current Ic Continuous a Max: 95A; Fall Time tf: 50ns; Junction to Case Thermal Resistance A: 0.33°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: Single; Power Dissipation Max: 375W; Rise Time: 50ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 1.2kV
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