IXYS IXA37IF1200HJ
- Part Number:
- IXA37IF1200HJ
- Manufacturer:
- IXYS
- Ventron No:
- 3587489-IXA37IF1200HJ
- Description:
- IGBT 1200V 58A 195W TO247
- ECAD Model:
-
- Datasheet:
- IXA37IF1200HJ
IXYS IXA37IF1200HJ technical specifications, attributes, parameters and parts with similar specifications to IXYS IXA37IF1200HJ.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2010
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation195W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation195W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current58A
- Reverse Recovery Time350ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage2.1V
- Turn On Time110 ns
- Test Condition600V, 35A, 27 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 35A
- Turn Off Time-Nom (toff)350 ns
- IGBT TypePT
- Gate Charge106nC
- Switching Energy3.8mJ (on), 4.1mJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Height21.34mm
- Length16.13mm
- Width5.21mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
IXA37IF1200HJ Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA37IF1200HJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA37IF1200HJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXA37IF1200HJ or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXA37IF1200HJ. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXA37IF1200HJ More Descriptions
Trans IGBT Chip N-CH 1200V 58A 195000mW 3-Pin(3 Tab) ISOPLUS 247 Tube
IGBT,1200V,58A,ISOPLUS247; DC Collector Current: 58A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 195W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 195W; Transistor Type: IGBT
Igbt, 1200V, 58A, Isoplus-247; Continuous Collector Current:58A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:195W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXA37IF1200HJ
IGBT,1200V,58A,ISOPLUS247; DC Collector Current: 58A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 195W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 195W; Transistor Type: IGBT
Igbt, 1200V, 58A, Isoplus-247; Continuous Collector Current:58A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:195W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXA37IF1200HJ
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