IRLZ34

Vishay Siliconix IRLZ34

Part Number:
IRLZ34
Manufacturer:
Vishay Siliconix
Ventron No:
2851443-IRLZ34
Description:
MOSFET N-CH 60V 30A TO-220AB
ECAD Model:
Datasheet:
IRLZ34

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Specifications
Vishay Siliconix IRLZ34 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLZ34.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    88W Tc
  • Element Configuration
    Single
  • Power Dissipation
    88W
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    50mOhm @ 18A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    30A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 5V
  • Rise Time
    170ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±10V
  • Fall Time (Typ)
    56 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    30A
  • Gate to Source Voltage (Vgs)
    10V
  • Input Capacitance
    1.6nF
  • Drain to Source Resistance
    50mOhm
  • Rds On Max
    50 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRLZ34 Overview
A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 50mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.

IRLZ34 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 30 ns
single MOSFETs transistor is 50mOhm
a 60V drain to source voltage (Vdss)


IRLZ34 Applications
There are a lot of Vishay Siliconix
IRLZ34 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLZ34 More Descriptions
Trans MOSFET N-CH 60V 30A 3-Pin (3 Tab) TO-220AB
French Electronic Distributor since 1988
Product Comparison
The three parts on the right have similar specifications to IRLZ34.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Contact Plating
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Lead Pitch
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRLZ34
    IRLZ34
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    88W Tc
    Single
    88W
    14 ns
    N-Channel
    50mOhm @ 18A, 5V
    2V @ 250μA
    1600pF @ 25V
    30A Tc
    35nC @ 5V
    170ns
    60V
    4V 5V
    ±10V
    56 ns
    30 ns
    30A
    10V
    1.6nF
    50mOhm
    50 mΩ
    9.01mm
    10.41mm
    4.7mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRLZ34NPBF
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -55°C~175°C TJ
    Tube
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    68W Tc
    Single
    56W
    8.9 ns
    N-Channel
    35m Ω @ 16A, 10V
    2V @ 250μA
    880pF @ 25V
    30A Tc
    25nC @ 5V
    100ns
    -
    4V 10V
    ±16V
    29 ns
    21 ns
    30A
    16V
    -
    -
    -
    8.77mm
    10.5156mm
    4.69mm
    No
    ROHS3 Compliant
    12 Weeks
    Tin
    SILICON
    HEXFET®
    e3
    3
    EAR99
    35mOhm
    AVALANCHE RATED
    55V
    250
    30A
    30
    2.54mm
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    2V
    TO-220AB
    55V
    55V
    110 ns
    2 V
    No SVHC
    Lead Free
  • IRLZ34NLPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    TO-262
    -
    -55°C~175°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    -
    3.8W Ta 68W Tc
    -
    68W
    8.9 ns
    N-Channel
    35mOhm @ 16A, 10V
    2V @ 250μA
    880pF @ 25V
    30A Tc
    25nC @ 5V
    100ns
    55V
    4V 10V
    ±16V
    29 ns
    21 ns
    30A
    16V
    880pF
    60mOhm
    35 mΩ
    9.65mm
    10.668mm
    4.826mm
    No
    RoHS Compliant
    -
    -
    -
    HEXFET®
    -
    -
    -
    35MOhm
    -
    55V
    -
    30A
    -
    -
    -
    -
    -
    -
    -
    55V
    -
    -
    -
    -
    Lead Free
  • IRLZ34STRR
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    D2PAK
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3.7W Ta 88W Tc
    -
    -
    -
    N-Channel
    50mOhm @ 18A, 5V
    2V @ 250μA
    1600pF @ 25V
    30A Tc
    35nC @ 5V
    -
    60V
    4V 5V
    ±10V
    -
    -
    30A
    -
    1.6nF
    -
    50 mΩ
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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