Vishay Siliconix IRLZ34
- Part Number:
- IRLZ34
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2851443-IRLZ34
- Description:
- MOSFET N-CH 60V 30A TO-220AB
- Datasheet:
- IRLZ34
Vishay Siliconix IRLZ34 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRLZ34.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max88W Tc
- Element ConfigurationSingle
- Power Dissipation88W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs50mOhm @ 18A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 5V
- Rise Time170ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)4V 5V
- Vgs (Max)±10V
- Fall Time (Typ)56 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)30A
- Gate to Source Voltage (Vgs)10V
- Input Capacitance1.6nF
- Drain to Source Resistance50mOhm
- Rds On Max50 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRLZ34 Overview
A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 50mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLZ34 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 30 ns
single MOSFETs transistor is 50mOhm
a 60V drain to source voltage (Vdss)
IRLZ34 Applications
There are a lot of Vishay Siliconix
IRLZ34 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 50mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4V 5V) to reduce its overall power consumption.
IRLZ34 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 30 ns
single MOSFETs transistor is 50mOhm
a 60V drain to source voltage (Vdss)
IRLZ34 Applications
There are a lot of Vishay Siliconix
IRLZ34 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRLZ34 More Descriptions
Trans MOSFET N-CH 60V 30A 3-Pin (3 Tab) TO-220AB
French Electronic Distributor since 1988
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRLZ34.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusFactory Lead TimeContact PlatingTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeResistanceAdditional FeatureVoltage - Rated DCPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Lead PitchOperating ModeCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRLZ34Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2016Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1188W TcSingle88W14 nsN-Channel50mOhm @ 18A, 5V2V @ 250μA1600pF @ 25V30A Tc35nC @ 5V170ns60V4V 5V±10V56 ns30 ns30A10V1.6nF50mOhm50 mΩ9.01mm10.41mm4.7mmNoNon-RoHS Compliant--------------------------
-
Through HoleThrough HoleTO-220-33---55°C~175°C TJTube1997Active1 (Unlimited)--MOSFET (Metal Oxide)1-68W TcSingle56W8.9 nsN-Channel35m Ω @ 16A, 10V2V @ 250μA880pF @ 25V30A Tc25nC @ 5V100ns-4V 10V±16V29 ns21 ns30A16V---8.77mm10.5156mm4.69mmNoROHS3 Compliant12 WeeksTinSILICONHEXFET®e33EAR9935mOhmAVALANCHE RATED55V25030A302.54mmENHANCEMENT MODEDRAINSWITCHING2VTO-220AB55V55V110 ns2 VNo SVHCLead Free
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3TO-262--55°C~175°C TJTube1997Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)1-3.8W Ta 68W Tc-68W8.9 nsN-Channel35mOhm @ 16A, 10V2V @ 250μA880pF @ 25V30A Tc25nC @ 5V100ns55V4V 10V±16V29 ns21 ns30A16V880pF60mOhm35 mΩ9.65mm10.668mm4.826mmNoRoHS Compliant---HEXFET®---35MOhm-55V-30A-------55V----Lead Free
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-D2PAK--55°C~175°C TJTape & Reel (TR)2016Active1 (Unlimited)--MOSFET (Metal Oxide)--3.7W Ta 88W Tc---N-Channel50mOhm @ 18A, 5V2V @ 250μA1600pF @ 25V30A Tc35nC @ 5V-60V4V 5V±10V--30A-1.6nF-50 mΩ----Non-RoHS Compliant-------------------------
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