IRLTS6342TRPBF

Infineon Technologies IRLTS6342TRPBF

Part Number:
IRLTS6342TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3070175-IRLTS6342TRPBF
Description:
MOSFET N-CH 30V 8.3A 6TSOP
ECAD Model:
Datasheet:
IRLTS6342TRPBF

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Specifications
Infineon Technologies IRLTS6342TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLTS6342TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    17.5MOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Number of Elements
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2W
  • Turn On Delay Time
    5.4 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    17.5m Ω @ 8.3A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1010pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    8.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 4.5V
  • Rise Time
    11ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    8.3A
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    30V
  • Recovery Time
    20 ns
  • Nominal Vgs
    -400 mV
  • Height
    1.3mm
  • Length
    3mm
  • Width
    1.75mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRLTS6342TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1010pF @ 25V.This device conducts a continuous drain current (ID) of 8.3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 12V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4.5V volts (2.5V 4.5V).

IRLTS6342TRPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns


IRLTS6342TRPBF Applications
There are a lot of Infineon Technologies
IRLTS6342TRPBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRLTS6342TRPBF More Descriptions
TAPE AND REEL // MOSFET, 30V, 8.3A, 17.5 mOhm, 2.5V drive capable, TSOP-6
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHSInfineon SCT
Single N-Channel 30 V 17.5 mOhm 11 nC HEXFET® Power Mosfet - TSOP-6
IRLTS6342TRPBF Infineon /IR MOSFET N-Channel 30V8.3A 2W Surface Mount 6-TSOP RoHS
MOSFET Operating temperature: -55... 150 °C Housing type: TSOP-6 Polarity: N Power dissipation: 2.0 W
Benefits: RoHS Compliant; Industry-Standard Pinout; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
MOSFET, N-CH, 30V, 8.3A, 6TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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