Infineon Technologies IRLB8721PBF

Name: IRLB8721PBF
Brand: Infineon Technologies
SKU: 3070100-IRLB8721PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRLB8721PBF

Manufacturer:: Infineon Technologies

Ventron No:: 3070100-IRLB8721PBF

Description:: MOSFET N-CH 30V 62A TO-220AB

ECAD Model:

Datasheet:: IRLB8721PBF

Specifications

Infineon Technologies IRLB8721PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRLB8721PBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
8.7mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
65W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
65W
Case Connection
DRAIN
Turn On Delay Time
9.1 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
8.7m Ω @ 31A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1077pF @ 15V
Current - Continuous Drain (Id) @ 25°C
62A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Rise Time
93ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
9 ns
Continuous Drain Current (ID)
62A
Threshold Voltage
1.8V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
250A
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
98 mJ
Recovery Time
24 ns
Nominal Vgs
1.8 V
Height
9.02mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRLB8721PBF Description
The IRLB8721PBF is a 30V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.

IRLB8721PBF Features
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Lead-Free
ROHS3 Compliant
No SVHC

IRLB8721PBF Applications
Optimized for UPS/Inverter Applications
High Frequency Synchronous Buck Converters for Computer Processor Power
High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use
Power Management
Computers & Computer Peripherals
Communications & Networking
Industrial

IRLB8721PBF More Descriptions

Single N-Channel 30 V 8.7 mOhm 13 nC HEXFET® Power Mosfet - TO-220-3
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
MOSFET,IRLB8721,N-CH,TO-220-3 30V(vds),1.8V(Vgs th),65W,62A
Power Field-Effect Transistor, 62A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 30V, 62A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:65W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:62A; Package / Case:TO-220AB; Power Dissipation Pd:65W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
Benefits: Very Low RDS(on) at 4.5V VGS; Ultra-Low Gate Impedance; Fully Characterized Avalanche Voltage and Current; Lead-Free | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Product Comparison

The three parts on the right have similar specifications to IRLB8721PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Technology

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain to Source Voltage (Vdss)

Surface Mount

JESD-609 Code

Terminal Finish

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRLB8721PBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2005

Active

1 (Unlimited)

3

Through Hole

EAR99

8.7mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

1

65W Tc

Single

ENHANCEMENT MODE

65W

DRAIN

9.1 ns

N-Channel

SWITCHING

8.7m Ω @ 31A, 10V

2.35V @ 25μA

1077pF @ 15V

62A Tc

13nC @ 4.5V

93ns

4.5V 10V

±20V

17 ns

9 ns

62A

1.8V

TO-220AB

20V

30V

250A

30V

98 mJ

24 ns

1.8 V

9.02mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRLBA1304PPBF

Infineon Technologies

-

-

-

Through Hole

TO-273AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

1999

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

300W Tc

-

-

-

-

-

N-Channel

-

4m Ω @ 110A, 10V

1V @ 250μA

7660pF @ 25V

185A Tc

140nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

40V

-

-

-

-

-

-

-

-

-

-

-

-

-

IRLB8721PBF vs IRLBA1304PPBF
IRLBA1304

Infineon Technologies

-

-

-

Through Hole

TO-273AA

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1999

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

MOSFET (Metal Oxide)

1

300W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

4m Ω @ 110A, 10V

1V @ 250μA

7660pF @ 25V

185A Tc

140nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

740A

-

1160 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

40V

NO

e3

MATTE TIN OVER NICKEL

AVALANCHE RATED

SINGLE

250

30

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

95A

0.004Ohm

40V

IRLB8721PBF vs IRLBA1304
IRLBA1304P

Infineon Technologies

-

-

-

Through Hole

TO-273AA

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1999

Obsolete

1 (Unlimited)

3

-

EAR99

-

-

MOSFET (Metal Oxide)

1

300W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

4m Ω @ 110A, 10V

1V @ 250μA

7660pF @ 25V

185A Tc

140nC @ 4.5V

-

4.5V 10V

±16V

-

-

-

-

-

-

-

740A

-

1160 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

40V

NO

e3

MATTE TIN OVER NICKEL

AVALANCHE RATED

SINGLE

250

30

R-PSIP-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

95A

0.004Ohm

40V

IRLB8721PBF vs IRLBA1304P

Certification

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IRLB8721PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu	2358	1 $0.7415 10 $0.6488 100 $0.5164 500 $0.4626 1000 $0.3741
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu	1319	1 $0.7415 10 $0.6488 100 $0.5164 500 $0.4626 1000 $0.3741
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 62A TO-220AB RoHS: Compliant	6429	1 $1.05 10 $0.932 100 $0.7467 500 $0.59008 1000 $0.47619
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu	4795	35 $0.3478 300 $0.3276 1750 $0.2923
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu	2358	24 $0.6524 100 $0.5185 500 $0.4644 1000 $0.3753
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu	1319	22 $0.6524 100 $0.5185 500 $0.4644 1000 $0.3753
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	0	2000 $0.2979 4000 $0.2869 6000 $0.2769 10000 $0.2669 20000 $0.2629
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	0
IRLB8721PBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 30V, 62A, TO-220, Transistor Po	415	1 $0.944 10 $0.815 100 $0.643 500 $0.576 1000 $0.47 2500 $0.425 10000 $0.412
IRLB8721PBF DISTI #	Infineon Technologies AG	IRLB8721PBF N-channel MOSFET Transistor, 62 A, 3 RoHS: Compliant	0	1100 $0.83
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 62A 9mOhm 8nC Qg RoHS: Compliant	4115	1 $0.85 10 $0.725 100 $0.557 500 $0.492 1000 $0.389 2000 $0.345 10000 $0.332
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 62A TO220AB, PK	5665	5 $1.048 25 $0.534
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 62A TO220AB, TU	1350	50 $0.528 250 $0.463 1000 $0.343 2500 $0.296
IRLB8721PBF DISTI #	International Rectifier	INSTOCK	1452
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 30V, 62A, TO220 RoHS: Compliant	2852	5 $0.683 25 $0.587 100 $0.468 250 $0.441 500 $0.413
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 30V, 62A, TO220 RoHS: Compliant	2991	1 $1.35 10 $1.15 100 $0.881 500 $0.779 1000 $0.616 2000 $0.583
IRLB8721PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 62A 3-Pin(3 Tab) TO-220AB Tu RoHS: Compliant	920	10 $0.339
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	4821	5 $2.04 100 $0.662 1000 $0.5
IRLB8721PBF DISTI #	Infineon Technologies AG	MOSFETs RoHS: Compliant	2358	10 $0.6488 500 $0.4626 1000 $0.3741

IRLB872~~(3)~~
IRLB87~~(9)~~
IRLB8~~(11)~~
IRLB~~(35)~~
IRL~~(58)~~

Infineon Technologies IRLB8721PBF

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