Infineon Technologies IRGR4607DPBF
- Part Number:
- IRGR4607DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497115-IRGR4607DPBF
- Description:
- IGBT 600V 11A 58W DPAK
- Datasheet:
- IRGx4607DPbF
Infineon Technologies IRGR4607DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGR4607DPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Input TypeStandard
- Power - Max58W
- Reverse Recovery Time48ns
- Voltage - Collector Emitter Breakdown (Max)600V
- Current - Collector (Ic) (Max)11A
- Test Condition400V, 4A, 100Ohm, 15V
- Vce(on) (Max) @ Vge, Ic2.05V @ 15V, 4A
- Gate Charge9nC
- Current - Collector Pulsed (Icm)12A
- Td (on/off) @ 25°C27ns/120ns
- Switching Energy140μJ (on), 62μJ (off)
- RoHS StatusNon-RoHS Compliant
IRGR4607DPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRGR4607DPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRGR4607DPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRGR4607DPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRGR4607DPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRGR4607DPBF More Descriptions
Trans IGBT Chip N-CH 600V 11A 3-Pin(2 Tab) DPAK Tube
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBT Transistors 600V TRENCH ULTRAFAST IGBT
IGBT, SINGLE, 600V, 11A, TO-252
French Electronic Distributor since 1988
IGBT, SINGLE, 600V, 11A, TO-252; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins:
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA
IGBT Transistors 600V TRENCH ULTRAFAST IGBT
IGBT, SINGLE, 600V, 11A, TO-252
French Electronic Distributor since 1988
IGBT, SINGLE, 600V, 11A, TO-252; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins:
The three parts on the right have similar specifications to IRGR4607DPBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Input TypePower - MaxReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Test ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusFactory Lead TimeMountNumber of PinsWeightPublishedJESD-609 CodeECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxView Compare
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IRGR4607DPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-40°C~175°C TJTubeObsolete1 (Unlimited)Standard58W48ns600V11A400V, 4A, 100Ohm, 15V2.05V @ 15V, 4A9nC12A27ns/120ns140μJ (on), 62μJ (off)Non-RoHS Compliant---------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--40°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)Standard-74 ns-16A400V, 6A, 47 Ω, 15V2V @ 15V, 6A13nC18A27ns/75ns56μJ (on), 122μJ (off)RoHS Compliant20 WeeksSurface Mount3350.003213mg2014e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors77W26030SingleN-CHANNEL2V10A600V2.14V20V6.5V
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--40°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)Standard-74ns-16A400V, 6A, 47 Ω, 15V2V @ 15V, 6A13nC18A27ns/75ns56μJ (on), 122μJ (off)RoHS Compliant-Surface Mount3350.003213mg2014e3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierInsulated Gate BIP Transistors77W26030SingleN-CHANNEL2V10A600V2.14V20V6.5V
-
-----Obsolete1 (Unlimited)-----------ROHS3 Compliant--------------------
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