Infineon Technologies IRG7PH37K10DPBF
- Part Number:
- IRG7PH37K10DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497125-IRG7PH37K10DPBF
- Description:
- IGBT 1200V 45A 216W TO247AC
- ECAD Model:
-
- Datasheet:
- IRG7PH37K10D(-E)PbF
Infineon Technologies IRG7PH37K10DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PH37K10DPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~150°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation216W
- Rise Time-Max45ns
- Element ConfigurationSingle
- Input TypeStandard
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.4V
- Max Collector Current25A
- Reverse Recovery Time120 ns
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Current - Collector (Ic) (Max)45A
- Collector Emitter Saturation Voltage2.4V
- Test Condition600V, 15A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 15A
- Gate Charge135nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C50ns/240ns
- Switching Energy1mJ (on), 600μJ (off)
- Gate-Emitter Thr Voltage-Max7.5V
- Fall Time-Max (tf)100ns
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRG7PH37K10DPBF Description
Produced by Infineon Technologies is IRG7PH37K10DPBF. IGBT Transistors make up its category. It is used in many different fields, including projectors, enterprise systems, and automotive hybrid, electric, and powertrain systems. And here are this part's primary specifications: IGBT 1200V 45A 216W TO247AC. It is also environmentally friendly and RoHS compliant (lead-free).
IRG7PH37K10DPBF Features
Package: TO-247
Package/Case: TO-247-3
Device Package: TO-247AC
RoHS: Lead free / RoHS Compliant
IRG7PH37K10DPBF Applications
Automotive
Enterprise systems
Communications equipment
Produced by Infineon Technologies is IRG7PH37K10DPBF. IGBT Transistors make up its category. It is used in many different fields, including projectors, enterprise systems, and automotive hybrid, electric, and powertrain systems. And here are this part's primary specifications: IGBT 1200V 45A 216W TO247AC. It is also environmentally friendly and RoHS compliant (lead-free).
IRG7PH37K10DPBF Features
Package: TO-247
Package/Case: TO-247-3
Device Package: TO-247AC
RoHS: Lead free / RoHS Compliant
IRG7PH37K10DPBF Applications
Automotive
Enterprise systems
Communications equipment
IRG7PH37K10DPBF More Descriptions
Trans IGBT Chip N-CH 1.2KV 45A 3-Pin(3 Tab) TO-247AC Tube
IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
Feed Through Capacitors Tape & Reel (TR) 10 Weeks CAP FEEDTHRU
IGBT W/ULTRAFAST SOFT RECOVERY D
IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel
Feed Through Capacitors Tape & Reel (TR) 10 Weeks CAP FEEDTHRU
IGBT W/ULTRAFAST SOFT RECOVERY D
The three parts on the right have similar specifications to IRG7PH37K10DPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationInput TypePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningRoHS StatusPower - MaxPower DissipationIGBT TypeView Compare
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IRG7PH37K10DPBFThrough HoleThrough HoleTO-247-33-40°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors216W45nsSingleStandardN-CHANNEL2.4V25A120 ns1.2kV1200V45A2.4V600V, 15A, 10 Ω, 15V2.4V @ 15V, 15A135nC60A50ns/240ns1mJ (on), 600μJ (off)7.5V100nsNoRoHS Compliant---- -
Through HoleThrough HoleTO-247-33-40°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors400W80nsSingleStandardN-CHANNEL2.4V90A130 ns1.2kV1200V--600V, 35A, 5 Ω, 15V2.4V @ 15V, 35A300nC160A90ns/340ns2.3mJ (on), 1.6mJ (off)7.5V110nsNoRoHS Compliant400W--
-
-------ObsoleteNot Applicable-----------------------RoHS Compliant---
-
Through HoleThrough HoleTO-247-33-55°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors115W-SingleStandardN-CHANNEL2.3V30A-1.2kV1200V-2.3V600V, 15A, 22 Ω, 15V2.3V @ 15V, 15A90nC100A-/229ns543μJ (off)6V-NoRoHS Compliant-115WTrench
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