IRG7PG35UPBF

Infineon Technologies IRG7PG35UPBF

Part Number:
IRG7PG35UPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497137-IRG7PG35UPBF
Description:
IGBT 1000V 55A 210W TO247AC
ECAD Model:
Datasheet:
IRG7PG35UPBF

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Specifications
Infineon Technologies IRG7PG35UPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PG35UPBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2014
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    210W
  • Reach Compliance Code
    unknown
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    210W
  • Collector Emitter Voltage (VCEO)
    2.2V
  • Max Collector Current
    55A
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Test Condition
    600V, 20A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 20A
  • IGBT Type
    Trench
  • Gate Charge
    85nC
  • Current - Collector Pulsed (Icm)
    60A
  • Td (on/off) @ 25°C
    30ns/160ns
  • Switching Energy
    1.06mJ (on), 620μJ (off)
  • RoHS Status
    RoHS Compliant
Description
IRG7PG35UPBF Description
The IRG7PG35UPBF is an N Channel  IGBT using Low VCE (ON) trench IGBT technology. 

IRG7PG35UPBF Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM?
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead-free package

IRG7PG35UPBF Applications
U.P.S.
Welding
Solar Inverter
Induction heating
IRG7PG35UPBF More Descriptions
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AC Tube
Insulated Gate Bipolar Transistors
G6.7, 1000V, 20A, TO-247AC, TUBE
DC DC Converters 3 (168 Hours) 1 14-SMD Module Surface Mount Non-Isolated PoL Module ITE (Commercial) -40°C~85°C 0.20Lx0.22W x 0.08 H 5.0mmx5.7mmx2.1mm DC/DC CONVERTR 0.8-5.3V 1.5A SMD
Product Comparison
The three parts on the right have similar specifications to IRG7PG35UPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Reach Compliance Code
    Element Configuration
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Number of Pins
    Subcategory
    Rise Time-Max
    Polarity/Channel Type
    Reverse Recovery Time
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Radiation Hardening
    Collector Current-Max (IC)
    Gate-Emitter Voltage-Max
    View Compare
  • IRG7PG35UPBF
    IRG7PG35UPBF
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    2014
    Obsolete
    1 (Unlimited)
    EAR99
    210W
    unknown
    Single
    Standard
    210W
    2.2V
    55A
    1kV
    1000V
    600V, 20A, 10 Ω, 15V
    2.2V @ 15V, 20A
    Trench
    85nC
    60A
    30ns/160ns
    1.06mJ (on), 620μJ (off)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG7PH50K10D-EPBF
    Through Hole
    Through Hole
    TO-247-3
    -40°C~150°C TJ
    Tube
    2013
    Obsolete
    1 (Unlimited)
    EAR99
    400W
    -
    Single
    Standard
    400W
    2.4V
    90A
    1.2kV
    1200V
    600V, 35A, 5 Ω, 15V
    2.4V @ 15V, 35A
    -
    300nC
    160A
    90ns/340ns
    2.3mJ (on), 1.6mJ (off)
    RoHS Compliant
    3
    Insulated Gate BIP Transistors
    80ns
    N-CHANNEL
    130 ns
    7.5V
    110ns
    No
    -
    -
  • IRG7CH81K10EF-R
    Surface Mount
    Surface Mount
    Die
    -40°C~175°C TJ
    Bulk
    -
    Obsolete
    Not Applicable
    -
    -
    -
    -
    Standard
    -
    2.3V
    -
    1.2kV
    1200V
    600V, 150A, 1 Ω, 15V
    2.3V @ 15V, 150A
    -
    745nC
    -
    70ns/330ns
    -
    RoHS Compliant
    -
    Insulated Gate BIP Transistors
    -
    N-CHANNEL
    -
    7.5V
    -
    -
    150A
    30V
  • IRG7CH75UED-R
    -
    -
    -
    -
    -
    -
    Obsolete
    Not Applicable
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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