Infineon Technologies IRG7PG35UPBF
- Part Number:
- IRG7PG35UPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497137-IRG7PG35UPBF
- Description:
- IGBT 1000V 55A 210W TO247AC
- Datasheet:
- IRG7PG35UPBF
Infineon Technologies IRG7PG35UPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG7PG35UPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation210W
- Reach Compliance Codeunknown
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max210W
- Collector Emitter Voltage (VCEO)2.2V
- Max Collector Current55A
- Collector Emitter Breakdown Voltage1kV
- Voltage - Collector Emitter Breakdown (Max)1000V
- Test Condition600V, 20A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 20A
- IGBT TypeTrench
- Gate Charge85nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C30ns/160ns
- Switching Energy1.06mJ (on), 620μJ (off)
- RoHS StatusRoHS Compliant
IRG7PG35UPBF Description
The IRG7PG35UPBF is an N Channel IGBT using Low VCE (ON) trench IGBT technology.
IRG7PG35UPBF Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM?
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead-free package
IRG7PG35UPBF Applications
U.P.S.
Welding
Solar Inverter
Induction heating
The IRG7PG35UPBF is an N Channel IGBT using Low VCE (ON) trench IGBT technology.
IRG7PG35UPBF Features
Low VCE (ON) trench IGBT technology
Low switching losses
Square RBSOA
100% of the parts tested for ILM?
Positive VCE (ON) temperature coefficient
Tight parameter distribution
Lead-free package
IRG7PG35UPBF Applications
U.P.S.
Welding
Solar Inverter
Induction heating
IRG7PG35UPBF More Descriptions
Trans IGBT Chip N-CH 1000V 55A 3-Pin TO-247AC Tube
Insulated Gate Bipolar Transistors
G6.7, 1000V, 20A, TO-247AC, TUBE
DC DC Converters 3 (168 Hours) 1 14-SMD Module Surface Mount Non-Isolated PoL Module ITE (Commercial) -40°C~85°C 0.20Lx0.22W x 0.08 H 5.0mmx5.7mmx2.1mm DC/DC CONVERTR 0.8-5.3V 1.5A SMD
Insulated Gate Bipolar Transistors
G6.7, 1000V, 20A, TO-247AC, TUBE
DC DC Converters 3 (168 Hours) 1 14-SMD Module Surface Mount Non-Isolated PoL Module ITE (Commercial) -40°C~85°C 0.20Lx0.22W x 0.08 H 5.0mmx5.7mmx2.1mm DC/DC CONVERTR 0.8-5.3V 1.5A SMD
The three parts on the right have similar specifications to IRG7PG35UPBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationReach Compliance CodeElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Test ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusNumber of PinsSubcategoryRise Time-MaxPolarity/Channel TypeReverse Recovery TimeGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningCollector Current-Max (IC)Gate-Emitter Voltage-MaxView Compare
-
IRG7PG35UPBFThrough HoleThrough HoleTO-247-3-55°C~175°C TJTube2014Obsolete1 (Unlimited)EAR99210WunknownSingleStandard210W2.2V55A1kV1000V600V, 20A, 10 Ω, 15V2.2V @ 15V, 20ATrench85nC60A30ns/160ns1.06mJ (on), 620μJ (off)RoHS Compliant-----------
-
Through HoleThrough HoleTO-247-3-40°C~150°C TJTube2013Obsolete1 (Unlimited)EAR99400W-SingleStandard400W2.4V90A1.2kV1200V600V, 35A, 5 Ω, 15V2.4V @ 15V, 35A-300nC160A90ns/340ns2.3mJ (on), 1.6mJ (off)RoHS Compliant3Insulated Gate BIP Transistors80nsN-CHANNEL130 ns7.5V110nsNo--
-
Surface MountSurface MountDie-40°C~175°C TJBulk-ObsoleteNot Applicable----Standard-2.3V-1.2kV1200V600V, 150A, 1 Ω, 15V2.3V @ 15V, 150A-745nC-70ns/330ns-RoHS Compliant-Insulated Gate BIP Transistors-N-CHANNEL-7.5V--150A30V
-
------ObsoleteNot Applicable-----------------RoHS Compliant----------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
28 September 2023
TIP35C Footprint, Package, Application and Other Details
Ⅰ. Overview of TIP35CⅡ. Symbol and footprint of TIP35CⅢ. Technical parametersⅣ. Features of TIP35CⅤ. Pinout and package of TIP35CⅥ. Working principle of TIP35C audio power amplifierⅦ. Application of... -
07 October 2023
An Introduction to TDA7266SA Dual Bridge Amplifier
Ⅰ. What is TDA7266SA?Ⅱ. Symbol, footprint and pin connection of TDA7266SAⅢ. Technical parametersⅣ. Features of TDA7266SAⅤ. How to configure the gain of TDA7266SA?Ⅵ. How is the short circuit... -
07 October 2023
How does IRF640 differ from IRF740?
Ⅰ. What is MOSFET?Ⅱ. Overview of IRF640Ⅲ. Overview of IRF740Ⅳ. IRF640 vs IRF740: SymbolⅤ. IRF640 vs IRF740: Technical parametersⅥ. IRF640 vs IRF740: FeaturesⅦ. IRF640 vs IRF740: Working principleⅧ.... -
08 October 2023
2N3773 Transistor Equivalent, Features and Applications
Ⅰ. 2N3773 transistor overviewⅡ. Symbol and pin connection of 2N3773Ⅲ. Technical parametersⅣ. What are the features of 2N3773?Ⅴ. How does the 2N3773 achieve amplification and switching functions in...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.