Infineon Technologies IRG6S320UTRRPBF
- Part Number:
- IRG6S320UTRRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497085-IRG6S320UTRRPBF
- Description:
- IGBT 330V 50A 114W D2PAK
- ECAD Model:
-
- Datasheet:
- IRG6S320UPbF
Infineon Technologies IRG6S320UTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG6S320UTRRPBF.
- Factory Lead Time26 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Max Power Dissipation114W
- Base Part NumberIRG6S320UPBF
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max114W
- Collector Emitter Voltage (VCEO)1.65V
- Max Collector Current50A
- Collector Emitter Breakdown Voltage330V
- Voltage - Collector Emitter Breakdown (Max)330V
- Current - Collector (Ic) (Max)50A
- Test Condition196V, 12A, 10Ohm
- Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 24A
- IGBT TypeTrench
- Gate Charge46nC
- Td (on/off) @ 25°C24ns/89ns
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRG6S320UTRRPBF Description
IRG6S320UTRRPBF is a 330v PDP trench IGBT. This IGBT IRG6S320UTRRPBF is specifically designed for applications in Plasma Display Panels. This IRG6S320UTRRPBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6S320UTRRPBF Features
Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VcE(on) and Energy per Pulse (EPULsE TM) for improved panel efficiency High repetitive peak current capability Lead-Free package
IRG6S320UTRRPBF Applications
Communications equipment Broadband fixed line access Enterprise systems Enterprise projectors Personal electronics Portable electronics
IRG6S320UTRRPBF is a 330v PDP trench IGBT. This IGBT IRG6S320UTRRPBF is specifically designed for applications in Plasma Display Panels. This IRG6S320UTRRPBF utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improves panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust, and reliable device for PDP applications.
IRG6S320UTRRPBF Features
Advanced Trench IGBT Technology Optimized for Sustain and Energy Recovery circuits in PDP applications Low VcE(on) and Energy per Pulse (EPULsE TM) for improved panel efficiency High repetitive peak current capability Lead-Free package
IRG6S320UTRRPBF Applications
Communications equipment Broadband fixed line access Enterprise systems Enterprise projectors Personal electronics Portable electronics
IRG6S320UTRRPBF More Descriptions
Inductor RF Chip Wirewound 22nH 2% 100MHz 42Q-Factor 640mA 99mOhm DCR 0603 Paper T/R
MOSFET; 330V; 50.000A; D2PAK | Infineon IRG6S320UTRRPBF
Compliant Surface Mount D2PAK 3 No Single 50 A 114 W
Insulated Gate Bipolar Transistors
MOSFET; 330V; 50.000A; D2PAK | Infineon IRG6S320UTRRPBF
Compliant Surface Mount D2PAK 3 No Single 50 A 114 W
Insulated Gate Bipolar Transistors
The three parts on the right have similar specifications to IRG6S320UTRRPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberElement ConfigurationInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Test ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeTd (on/off) @ 25°CRadiation HardeningRoHS StatusPower DissipationCollector Emitter Saturation VoltageTransistor Element MaterialNumber of TerminationsECCN CodeSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPolarity/Channel TypeReverse Recovery TimeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)Gate-Emitter Thr Voltage-MaxView Compare
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IRG6S320UTRRPBF26 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-40°C~150°C TJTape & Reel (TR)2009Obsolete1 (Unlimited)150°C-40°C114WIRG6S320UPBFSingleStandard114W1.65V50A330V330V50A196V, 12A, 10Ohm1.65V @ 15V, 24ATrench46nC24ns/89nsNoRoHS Compliant----------------- -
--Through HoleTO-220-3 Full Pack---Tube2008Obsolete1 (Unlimited)-----Standard43W---330V28A-2.38V @ 15V, 120ATrench--------------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-40°C~150°C TJTube2009Obsolete1 (Unlimited)150°C-40°C160W-SingleStandard160W2.1V70A330V330V70A196V, 25A, 10Ohm2.1V @ 15V, 70ATrench86nC39ns/120nsNoRoHS Compliant160W2.1V--------------
-
16 WeeksThrough HoleThrough HoleTO-220-33--40°C~150°C TJTube2010Last Time Buy1 (Unlimited)--160W-SingleStandard160W2.76V70A330V--196V, 25A, 10 Ω2.76V @ 15V, 120ATrench85nC47ns/176ns-ROHS3 Compliant--SILICON3EAR99Insulated Gate BIP TransistorsNOT SPECIFIEDNOT SPECIFIEDNot Qualified1N-CHANNEL60 nsTO-220AB83 ns411 ns5V
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