Infineon Technologies IRFZ48VPBF
- Part Number:
- IRFZ48VPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2483238-IRFZ48VPBF
- Description:
- MOSFET N-CH 60V 72A TO-220AB
- Datasheet:
- IRFZ48VPBF
Infineon Technologies IRFZ48VPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ48VPBF.
- Package / CaseTO-220AB
- PackagingTube-packed
- RoHS StatusRoHS Compliant
IRFZ48VPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRFZ48VPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFZ48VPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRFZ48VPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFZ48VPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRFZ48VPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
Transistor MOSFET Negative Channel 60 Volt 72A 3-Pin(3 Tab) TO-220AB
Single N-Channel 60 V 12 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 60V 72A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 60V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Transistor MOSFET Negative Channel 60 Volt 72A 3-Pin(3 Tab) TO-220AB
Single N-Channel 60 V 12 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 60V 72A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 60V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRFZ48VPBF.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMountMounting TypeNumber of PinsSupplier Device PackageOperating TemperatureSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningLead FreeSurface MountTransistor Element MaterialNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)WeightNumber of ChannelsElement ConfigurationHeightLengthWidthView Compare
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IRFZ48VPBFTO-220ABTube-packedRoHS Compliant---------------------------------------------------------------
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TO-262-3 Long Leads, I2Pak, TO-262AATubeRoHS CompliantThrough HoleThrough Hole3TO-262-55°C~175°C TJHEXFET®1997Obsolete1 (Unlimited)40mOhm175°C-55°C55VMOSFET (Metal Oxide)29A13.8W Ta 68W Tc68W7 nsN-Channel40mOhm @ 16A, 10V4V @ 250μA700pF @ 25V29A Tc34nC @ 10V49ns55V10V±20V40 ns31 ns29A20V55V700pF40mOhm40 mΩNoLead Free-----------------------
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TO-262-3 Long Leads, I2Pak, TO-262AATubeNon-RoHS Compliant-Through Hole---55°C~175°C TJHEXFET®2001Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-13.8W Ta 94W Tc--N-Channel17.5m Ω @ 25A, 10V4V @ 250μA1470pF @ 25V49A Tc63nC @ 10V-55V10V±20V----------NOSILICON3AVALANCHE RATED, HIGH RELIABILITYSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T3SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING49A0.0175Ohm160A55V150 mJ------
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TO-263-3, D2Pak (2 Leads Tab), TO-263ABTape & Reel (TR)Non-RoHS CompliantSurface MountSurface Mount3D2PAK-55°C~175°C TJ-2016Obsolete1 (Unlimited)-150°C-55°C60VMOSFET (Metal Oxide)50A-3.7W Ta 150W Tc-14 nsN-Channel28mOhm @ 31A, 10V4V @ 250μA1900pF @ 25V50A Tc67nC @ 10V110ns60V10V±20V92 ns45 ns50A20V-1.9nF28mOhm28 mΩ-Contains Lead-----------------1.437803g1Single4.83mm10.67mm9.65mm
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