IRFZ48VPBF

Infineon Technologies IRFZ48VPBF

Part Number:
IRFZ48VPBF
Manufacturer:
Infineon Technologies
Ventron No:
2483238-IRFZ48VPBF
Description:
MOSFET N-CH 60V 72A TO-220AB
ECAD Model:
Datasheet:
IRFZ48VPBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRFZ48VPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ48VPBF.
  • Package / Case
    TO-220AB
  • Packaging
    Tube-packed
  • RoHS Status
    RoHS Compliant
Description
IRFZ48VPBF Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IRFZ48VPBF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IRFZ48VPBF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IRFZ48VPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
Transistor MOSFET Negative Channel 60 Volt 72A 3-Pin(3 Tab) TO-220AB
Single N-Channel 60 V 12 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 60V 72A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55... 175 °C Housing type: TO-220AB Polarity: N Power dissipation: 150 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 60V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:290A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRFZ48VPBF.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Mount
    Mounting Type
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    Lead Free
    Surface Mount
    Transistor Element Material
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Weight
    Number of Channels
    Element Configuration
    Height
    Length
    Width
    View Compare
  • IRFZ48VPBF
    IRFZ48VPBF
    TO-220AB
    Tube-packed
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ34NLPBF
    TO-262-3 Long Leads, I2Pak, TO-262AA
    Tube
    RoHS Compliant
    Through Hole
    Through Hole
    3
    TO-262
    -55°C~175°C TJ
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    40mOhm
    175°C
    -55°C
    55V
    MOSFET (Metal Oxide)
    29A
    1
    3.8W Ta 68W Tc
    68W
    7 ns
    N-Channel
    40mOhm @ 16A, 10V
    4V @ 250μA
    700pF @ 25V
    29A Tc
    34nC @ 10V
    49ns
    55V
    10V
    ±20V
    40 ns
    31 ns
    29A
    20V
    55V
    700pF
    40mOhm
    40 mΩ
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ44NL
    TO-262-3 Long Leads, I2Pak, TO-262AA
    Tube
    Non-RoHS Compliant
    -
    Through Hole
    -
    -
    -55°C~175°C TJ
    HEXFET®
    2001
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    3.8W Ta 94W Tc
    -
    -
    N-Channel
    17.5m Ω @ 25A, 10V
    4V @ 250μA
    1470pF @ 25V
    49A Tc
    63nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NO
    SILICON
    3
    AVALANCHE RATED, HIGH RELIABILITY
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSIP-T3
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    49A
    0.0175Ohm
    160A
    55V
    150 mJ
    -
    -
    -
    -
    -
    -
  • IRFZ44STRR
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    Non-RoHS Compliant
    Surface Mount
    Surface Mount
    3
    D2PAK
    -55°C~175°C TJ
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    50A
    -
    3.7W Ta 150W Tc
    -
    14 ns
    N-Channel
    28mOhm @ 31A, 10V
    4V @ 250μA
    1900pF @ 25V
    50A Tc
    67nC @ 10V
    110ns
    60V
    10V
    ±20V
    92 ns
    45 ns
    50A
    20V
    -
    1.9nF
    28mOhm
    28 mΩ
    -
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.437803g
    1
    Single
    4.83mm
    10.67mm
    9.65mm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.