Infineon Technologies IRFZ48NSTRRPBF

IRFZ48NSTRRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1970pF @ 25V.This device conducts a continuous drain current (ID) of 64A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFZ48NSTRRPBF Features
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 34 ns
a 55V drain to source voltage (Vdss)


IRFZ48NSTRRPBF Applications
There are a lot of Infineon Technologies
IRFZ48NSTRRPBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching