Infineon Technologies IRFZ48NSPBF
- Part Number:
- IRFZ48NSPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851874-IRFZ48NSPBF
- Description:
- MOSFET N-CH 55V 64A D2PAK
- Datasheet:
- IRFZ48NSPBF
Infineon Technologies IRFZ48NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ48NSPBF.
- Factory Lead Time22 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2001
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.8W Ta 130W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs14m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1970pF @ 25V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRFZ48NSPBF Description
The IRFZ48NSPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The Infineon IRFZ48NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRFZ48NSPBF Features
Advanced Process Technology
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-free
IRFZ48NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
The IRFZ48NSPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The Infineon IRFZ48NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
IRFZ48NSPBF Features
Advanced Process Technology
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-free
IRFZ48NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRFZ48NSPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS /-20V
Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 55V 64A 3-Pin(2 Tab) D2PAK Tube
Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 55V 64A 3-Pin(2 Tab) D2PAK Tube
Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
The three parts on the right have similar specifications to IRFZ48NSPBF.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeTechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountNumber of PinsSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRFZ48NSPBF22 WeeksSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®2001Discontinued1 (Unlimited)EAR99MOSFET (Metal Oxide)3.8W Ta 130W TcN-Channel14m Ω @ 32A, 10V4V @ 250μA1970pF @ 25V64A Tc81nC @ 10V55V10V±20VROHS3 Compliant-----------------------------------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)3.8W Ta 68W TcN-Channel40m Ω @ 16A, 10V4V @ 250μA700pF @ 25V29A Tc34nC @ 10V55V10V±20VNon-RoHS CompliantYESSILICONe02Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING29A0.04Ohm100A55V130 mJ-----------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTubeHEXFET®1997Obsolete1 (Unlimited)EAR99MOSFET (Metal Oxide)110W TcN-Channel23m Ω @ 29A, 10V4V @ 250μA1360pF @ 25V48A Tc60nC @ 10V60V10V±20VNon-RoHS CompliantYESSILICONe02Tin/Lead (Sn/Pb)AVALANCHE RATED, HIGH RELIABILITY-SINGLEGULL WING22530R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING48A0.023Ohm192A60V220 mJ-----------------
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)-2016Obsolete1 (Unlimited)-MOSFET (Metal Oxide)3.7W Ta 43W TcN-Channel200mOhm @ 6A, 10V4V @ 250μA300pF @ 25V10A Tc11nC @ 10V60V10V±20VNon-RoHS Compliant-----------------------Surface Mount3D2PAK1.437803g175°C-55°C1Single10 ns50ns19 ns13 ns10A20V300pF200mOhm200 mΩ
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