IRFZ48NSPBF

Infineon Technologies IRFZ48NSPBF

Part Number:
IRFZ48NSPBF
Manufacturer:
Infineon Technologies
Ventron No:
2851874-IRFZ48NSPBF
Description:
MOSFET N-CH 55V 64A D2PAK
ECAD Model:
Datasheet:
IRFZ48NSPBF

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Specifications
Infineon Technologies IRFZ48NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ48NSPBF.
  • Factory Lead Time
    22 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2001
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3.8W Ta 130W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    14m Ω @ 32A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1970pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    64A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    81nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    ROHS3 Compliant
Description
IRFZ48NSPBF Description
The IRFZ48NSPBF is a HEXFET? single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The Infineon IRFZ48NSPBF is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

IRFZ48NSPBF Features
Advanced Process Technology
Surface Mount (IRFZ48NS)
Low-profile through-hole (IRFZ48NL)
175??C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-free

IRFZ48NSPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
IRFZ48NSPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;D2Pak;PD 130W;VGS /-20V
Single N-Channel 55 V 14 mOhm 81 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 55V 64A 3-Pin(2 Tab) D2PAK Tube
Inductor Power Shielded Wirewound 22uH 20% 1MHz Ferrite 0.55A 0.822Ohm DCR 1210 Automotive T/R
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 130 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Avalanche Single Pulse Energy Eas:700mJ; Capacitance Ciss Typ:1970pF; Current Id Max:64A; Package / Case:D2-PAK; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:100ns; SMD Marking:Z48NS; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Product Comparison
The three parts on the right have similar specifications to IRFZ48NSPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Mount
    Number of Pins
    Supplier Device Package
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRFZ48NSPBF
    IRFZ48NSPBF
    22 Weeks
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2001
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    3.8W Ta 130W Tc
    N-Channel
    14m Ω @ 32A, 10V
    4V @ 250μA
    1970pF @ 25V
    64A Tc
    81nC @ 10V
    55V
    10V
    ±20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ34NS
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    3.8W Ta 68W Tc
    N-Channel
    40m Ω @ 16A, 10V
    4V @ 250μA
    700pF @ 25V
    29A Tc
    34nC @ 10V
    55V
    10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    e0
    2
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    8541.29.00.95
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    29A
    0.04Ohm
    100A
    55V
    130 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ44ES
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    1997
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    110W Tc
    N-Channel
    23m Ω @ 29A, 10V
    4V @ 250μA
    1360pF @ 25V
    48A Tc
    60nC @ 10V
    60V
    10V
    ±20V
    Non-RoHS Compliant
    YES
    SILICON
    e0
    2
    Tin/Lead (Sn/Pb)
    AVALANCHE RATED, HIGH RELIABILITY
    -
    SINGLE
    GULL WING
    225
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    48A
    0.023Ohm
    192A
    60V
    220 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFZ14STRL
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    3.7W Ta 43W Tc
    N-Channel
    200mOhm @ 6A, 10V
    4V @ 250μA
    300pF @ 25V
    10A Tc
    11nC @ 10V
    60V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Surface Mount
    3
    D2PAK
    1.437803g
    175°C
    -55°C
    1
    Single
    10 ns
    50ns
    19 ns
    13 ns
    10A
    20V
    300pF
    200mOhm
    200 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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