Infineon Technologies IRFZ48NPBF

Name: IRFZ48NPBF
Brand: Infineon Technologies
SKU: 2484962-IRFZ48NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFZ48NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2484962-IRFZ48NPBF

Description:: MOSFET N-CH 55V 64A TO-220AB

ECAD Model:

Datasheet:: IRFZ48NPBF

Specifications

Infineon Technologies IRFZ48NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ48NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Package / Case
TO-220-3
Mounting Type
Through Hole
Mount
Through Hole
Number of Pins
3
Transistor Element Material
SILICON
Published
2001
Series
HEXFET®
Packaging
Tube
Operating Temperature
-55°C~175°C TJ
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
250
Current Rating
64A
Time@Peak Reflow Temperature-Max (s)
30
Lead Pitch
2.54mm
Number of Elements
1
Power Dissipation-Max
130W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
94W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 32A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1970pF @ 25V
Current - Continuous Drain (Id) @ 25°C
64A Tc
Gate Charge (Qg) (Max) @ Vgs
81nC @ 10V
Rise Time
78ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
50 ns
Turn-Off Delay Time
34 ns
Continuous Drain Current (ID)
64A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
100 ns
Nominal Vgs
4 V
Width
4.69mm
Length
10.54mm
Height
8.77mm
RoHS Status
ROHS3 Compliant
Radiation Hardening
No
REACH SVHC
No SVHC
Lead Free
Lead Free

Description

IRFZ48NPBF Description
The IRFZ48NPBF is a 55V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRFZ48NPBF is in the TO-220-3 package with 94W power dissipation.

IRFZ48NPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free

IRFZ48NPBF Applications
DC motors
Inverters
SMPS
Lighting
Load switches
Battery-powered applications

IRFZ48NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
Transistor MOSFET N Channel 55 Volt 64 Amp 3 Pin 3 Tab TO-220AB
Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon Flange Mount Mosfet - TO-220-3
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 53A/55V TO220 IRFZ 48 N PBF
Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:130W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:64A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:130W; Power Dissipation Pd:130W; Power Dissipation Ptot Max:130W; Pulse Current Idm:210A; Termination Type:Through Hole; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

Product Comparison

The three parts on the right have similar specifications to IRFZ48NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Package / Case

Mounting Type

Mount

Number of Pins

Transistor Element Material

Published

Series

Packaging

Operating Temperature

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Lead Pitch

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Width

Length

Height

RoHS Status

Radiation Hardening

REACH SVHC

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Terminal Form

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFZ48NPBF

Infineon Technologies

12 Weeks

Tin

TO-220-3

Through Hole

Through Hole

3

SILICON

2001

HEXFET®

Tube

-55°C~175°C TJ

e3

Active

1 (Unlimited)

3

Through Hole

EAR99

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

55V

MOSFET (Metal Oxide)

250

64A

30

2.54mm

1

130W Tc

Single

ENHANCEMENT MODE

94W

DRAIN

12 ns

N-Channel

SWITCHING

14m Ω @ 32A, 10V

4V @ 250μA

1970pF @ 25V

64A Tc

81nC @ 10V

78ns

10V

±20V

50 ns

34 ns

64A

4V

TO-220AB

20V

55V

55V

100 ns

4 V

4.69mm

10.54mm

8.77mm

ROHS3 Compliant

No

No SVHC

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFZ44ES

Infineon Technologies

-

-

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Surface Mount

-

-

SILICON

1997

HEXFET®

Tube

-55°C~175°C TJ

e0

Obsolete

1 (Unlimited)

2

-

EAR99

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

225

-

30

-

1

110W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

23m Ω @ 29A, 10V

4V @ 250μA

1360pF @ 25V

48A Tc

60nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

YES

Tin/Lead (Sn/Pb)

SINGLE

GULL WING

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60V

48A

0.023Ohm

192A

60V

220 mJ

-

-

-

-

-

-

-

-

IRFZ48NPBF vs IRFZ44ES
IRFZ44ESTRL

Infineon Technologies

-

-

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Surface Mount

Surface Mount

-

SILICON

1997

HEXFET®

Tape & Reel (TR)

-55°C~175°C TJ

e3

Obsolete

1 (Unlimited)

2

-

EAR99

AVALANCHE RATED, HIGH RELIABILITY

-

60V

MOSFET (Metal Oxide)

260

48A

30

-

1

110W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

23m Ω @ 29A, 10V

4V @ 250μA

1360pF @ 25V

48A Tc

60nC @ 10V

60ns

10V

±20V

-

-

48A

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

Contains Lead

-

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

GULL WING

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

-

-

0.023Ohm

192A

-

220 mJ

-

-

-

-

-

-

-

-

IRFZ48NPBF vs IRFZ44ESTRL
IRFZ14STRL

Vishay Siliconix

-

-

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

Surface Mount

Surface Mount

3

-

2016

-

Tape & Reel (TR)

-55°C~175°C TJ

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

3.7W Ta 43W Tc

Single

-

-

-

10 ns

N-Channel

-

200mOhm @ 6A, 10V

4V @ 250μA

300pF @ 25V

10A Tc

11nC @ 10V

50ns

10V

±20V

19 ns

13 ns

10A

-

-

20V

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

-

-

D2PAK

1.437803g

175°C

-55°C

1

300pF

200mOhm

200 mΩ

IRFZ48NPBF vs IRFZ14STRL

Certification

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IRFZ14STRL

Vishay Siliconix

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IRFZ48NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1889	1 $0.9528 10 $0.8265 100 $0.6346 500 $0.5742 1000 $0.4592 2000 $0.4133 10000 $0.372 25000 $0.3348
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	615	1 $0.9528 10 $0.8265 100 $0.6346 500 $0.5742 1000 $0.4592 2000 $0.4133 10000 $0.372 25000 $0.3348
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET N-CH 55V 64A TO-220AB RoHS: Compliant	4638	1 $1.27 10 $1.121 100 $0.8861 500 $0.6872 1000 $0.54252
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	12097	32 $0.8342 100 $0.7277 500 $0.6307
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1889	18 $0.8256 100 $0.6341 500 $0.5738 1000 $0.4589
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1030	19 $1.2623 50 $1.2597 100 $1.0098 200 $0.9779
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	615	19 $0.8256 100 $0.6341 500 $0.5738
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH 55V 64A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1 $0.3809 10 $0.3749 25 $0.3699 50 $0.3649 100 $0.3519 500 $0.3399 1000 $0.3339
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Transistor MOSFET N-CH 55V 64A 3-Pin TO-220AB Tube RoHS: Compliant	0	2000 $0.31871 4000 $0.30986 6000 $0.30149 10000 $0.29355 20000 $0.28974 50000 $0.28603 100000 $0.28241
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 64A TO-220AB, Transistor P	1320	1 $1.15 10 $0.995 100 $0.781 500 $0.699 1000 $0.568 2500 $0.512 10000 $0.495
IRFZ48NPBF. DISTI #IRFZ48NPBF.	Infineon Technologies AG	N CHANNEL MOSFET, 55V, 64A TO-220AB, Transistor P	0	1 $1.17 10 $1.02 100 $0.797 500 $0.699 1000 $0.568 2500 $0.512 10000 $0.495
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 14 Mill RoHS: Compliant	102	1 $0.985 10 $0.869 100 $0.758 500 $0.657 1000 $0.58
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Single N-Channel 55 V 14 mOhm 81 nC 130 W Silicon RoHS: Compliant	12300	20 $0.525 200 $0.48 1000 $0.415
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET MOSFT 55V 64A 14mOhm 54nC RoHS: Compliant	5184	1 $1.08 10 $0.921 100 $0.707 500 $0.625 1000 $0.494
IRFZ48N DISTI #IRFZ48N	Infineon Technologies AG	MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220	0
IRFZ48NPBF DISTI #IRFZ48NPBF	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	12	1 $1.365 5 $1.092
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET N-CHANNEL 55V 64A TO220AB, EA	1307	1 $2 20 $0.64 25 $0.63
IRFZ48NPBF DISTI #IRFZ48NPBF	International Rectifier		1749
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1030	5 $1.11 10 $0.99 50 $0.988 100 $0.792 200 $0.767 500 $0.619
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1889	10 $0.8256 100 $0.6341 500 $0.5738 1000 $0.4589
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 64A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	12097	5 $2.23 25 $0.893 50 $0.812 100 $0.724 500 $0.595 1000 $0.547
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	2903	1 $1.72 10 $1.46 100 $1.13 500 $0.99 1000 $0.782 2000 $0.693 10000 $0.666 25000 $0.65
IRFZ48NPBF DISTI #IRFZ48NPBF	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	2070	5 $0.653 25 $0.48 100 $0.444 250 $0.408 500 $0.36

IRFZ48N~~(10)~~
IRFZ48~~(34)~~
IRFZ4~~(58)~~
IRFZ~~(61)~~
IRF~~(69)~~

Infineon Technologies IRFZ48NPBF

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