Infineon Technologies IRFZ24NPBF

Name: IRFZ24NPBF
Brand: Infineon Technologies
SKU: 2479637-IRFZ24NPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFZ24NPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479637-IRFZ24NPBF

Description:: MOSFET N-CH 55V 17A TO-220AB

ECAD Model:

Datasheet:: IRFZ24NPBF

Specifications

Infineon Technologies IRFZ24NPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFZ24NPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
1999
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
70mOhm
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Current Rating
17A
Lead Pitch
2.54mm
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
4.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
70m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
34ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
27 ns
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
17A
Threshold Voltage
2V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
68A
Dual Supply Voltage
55V
Max Junction Temperature (Tj)
175°C
Nominal Vgs
4 V
Height
19.8mm
Length
10.5156mm
Width
4.69mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFZ24NPBF Description
International Rectifier's Fifth Generation HEXFET power MOSFETs use innovative processing techniques to provide the lowest achievable on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer a highly efficient device that can be used in a wide range of applications.

IRFZ24NPBF Features
Advanced process technology
Dynamic dv/dt rating
Fast switching
Fully avalanche rated
Planar cell structure for wide SOA
Product qualification according to JEDEC standard
High-current rating
Increased ruggedness
High performance in low frequency applications
High current capability

IRFZ24NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRFZ24NPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS /-20V
Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3 Tab TO-220 AB
MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB Tube
Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
INFINEON THT MOSFET NFET 55V 17A 70mΩ 175°C TO-220 IRFZ24NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Transistor MOSFET N-Ch. 17A/55V TO220 IRFZ 24 NPBF
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFZ24NPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Lead Pitch

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

JESD-609 Code

Terminal Finish

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRFZ24NPBF

Infineon Technologies

12 Weeks

Tin

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1999

Active

1 (Unlimited)

3

Through Hole

EAR99

70mOhm

AVALANCHE RATED

FET General Purpose Power

55V

MOSFET (Metal Oxide)

17A

2.54mm

1

1

45W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

4.9 ns

N-Channel

SWITCHING

70m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

34ns

10V

±20V

27 ns

19 ns

17A

2V

TO-220AB

20V

55V

68A

55V

175°C

4 V

19.8mm

10.5156mm

4.69mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFZ44ESTRR

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1997

Obsolete

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

-

-

1

-

110W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

23m Ω @ 29A, 10V

4V @ 250μA

1360pF @ 25V

48A Tc

60nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

192A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e3

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60V

48A

0.023Ohm

60V

220 mJ

-

-

-

-

-

-

-

IRFZ24NPBF vs IRFZ44ESTRR
IRFZ44ES

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1997

Obsolete

1 (Unlimited)

2

-

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

-

-

MOSFET (Metal Oxide)

-

-

1

-

110W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

23m Ω @ 29A, 10V

4V @ 250μA

1360pF @ 25V

48A Tc

60nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

192A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

e0

Tin/Lead (Sn/Pb)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

60V

48A

0.023Ohm

60V

220 mJ

-

-

-

-

-

-

-

IRFZ24NPBF vs IRFZ44ES
IRFZ44STRR

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tape & Reel (TR)

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

60V

MOSFET (Metal Oxide)

50A

-

-

1

3.7W Ta 150W Tc

Single

-

-

-

14 ns

N-Channel

-

28mOhm @ 31A, 10V

4V @ 250μA

1900pF @ 25V

50A Tc

67nC @ 10V

110ns

10V

±20V

92 ns

45 ns

50A

-

-

20V

-

-

-

-

-

4.83mm

10.67mm

9.65mm

-

-

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

60V

-

-

-

-

D2PAK

1.437803g

150°C

-55°C

1.9nF

28mOhm

28 mΩ

IRFZ24NPBF vs IRFZ44STRR

Certification

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IRFZ24NPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	10245	50 $0.216 500 $0.2017
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1990	44 $0.5852 50 $0.4552 100 $0.3965 200 $0.3506 500 $0.3277
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 17A TO-220AB RoHS: Compliant	4533	1 $0.77 10 $0.682 100 $0.5334 500 $0.40344 1000 $0.32916
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	837	5 $0.662 25 $0.331 50 $0.323 100 $0.285 500 $0.224
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1325	10 $0.421 50 $0.298 100 $0.26
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1990	10 $0.463 50 $0.36 100 $0.313
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 55V 17A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	636	1 $0.4625 10 $0.4066 100 $0.2943 1000 $0.2473 2000 $0.2145
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	82300	1 $0.5389 10 $0.4479 25 $0.4319 50 $0.4309 100 $0.2889 500 $0.2889 1000 $0.2319
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1 $0.4439 10 $0.3929 25 $0.3919 50 $0.3909 100 $0.2839 500 $0.2569 1000 $0.2559
IRFZ24NPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 55V 17A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 17A, TO-220, Transistor Polarity:	2625	1 $0.698 10 $0.589 100 $0.398 500 $0.364 1000 $0.329 2500 $0.294 10000 $0.29
IRFZ24NPBF. DISTI #	Infineon Technologies AG	Transistor Polarity:N Channel, Continuous Drain C	0	1 $0.698 10 $0.589 100 $0.398 500 $0.364 1000 $0.329 2500 $0.294 10000 $0.29
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.07Ohm RoHS: Compliant	147	1 $1.35 10 $1.2 100 $1.04 500 $0.9 1000 $0.8
IRFZ24NPBF DISTI #	International Rectifier	RoHS: Not Compliant	150	1 $0.28 25 $0.26 100 $0.25 500 $0.24 1000 $0.22
IRFZ24NPBF DISTI #	Infineon Technologies AG	Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET Power RoHS: Compliant	10100	40 $0.27 400 $0.245 2000 $0.215
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 55V 17A 70mOhm 13.3nC RoHS: Compliant	5108	1 $0.63 10 $0.524 100 $0.338 1000 $0.271 2000 $0.228
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 17A TO220AB, TU	50	50 $0.406 250 $0.27 1000 $0.217 2500 $0.188
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 55V 17A TO220AB, EA	2963	1 $2 30 $0.35 60 $0.34
IRFZ24NPBF DISTI #	International Rectifier		59
IRFZ24NPBF DISTI #	International Rectifier	MOSFET Transistor, N-Channel, TO-220AB	4	1 $1.172 5 $0.879
IRFZ24NPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 55V, 17A, 45W,	326	1 $0.6558 3 $0.4297 10 $0.3501 100 $0.3001
IRFZ24NPBF DISTI #	Infineon Technologies AG	N-Ch 55V 17A 45W 0,07R TO220AB RoHS: Compliant	2270	10 $0.549 50 $0.289 200 $0.229 500 $0.2205
IRFZ24NPBF DISTI #	International Rectifier	INSTOCK	154
IRFZ24NPBF DISTI #	INFINEON/IR	TO-220AB RoHS: Compliant	18216	3100 $0.23 18216 $0.21
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 17A, TO-220 RoHS: Compliant	3377	5 $0.357 25 $0.347 100 $0.26 250 $0.245 500 $0.229
IRFZ24NPBF DISTI #	Infineon Technologies AG	MOSFET, N, 55V, 17A, TO-220 RoHS: Compliant	3008	1 $0.997 10 $0.83 100 $0.535 1000 $0.429 2000 $0.423

IRFZ24N~~(12)~~
IRFZ24~~(24)~~
IRFZ2~~(28)~~
IRFZ~~(61)~~
IRF~~(69)~~

Infineon Technologies IRFZ24NPBF

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