Vishay Siliconix IRFZ14
- Part Number:
- IRFZ14
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488233-IRFZ14
- Description:
- MOSFET N-CH 60V 10A TO-220AB
- Datasheet:
- IRFZ14
Vishay Siliconix IRFZ14 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFZ14.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Channels1
- Power Dissipation-Max43W Tc
- Element ConfigurationSingle
- Power Dissipation43W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time50ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance300pF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFZ14 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFZ14 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFZ14 Applications
There are a lot of Vishay Siliconix
IRFZ14 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 300pF @ 25V.This device conducts a continuous drain current (ID) of 10A, which is the maximum continuous current transistor can conduct.Using VGS=60V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 60V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 13 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 200mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFZ14 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFZ14 Applications
There are a lot of Vishay Siliconix
IRFZ14 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFZ14 More Descriptions
MOSFET, POWER; N-CHANNEL; 0.20 OHMS (MAX.); 60 V (MIN.); 10 A (MAX.) @ 25 DEGC
Trans MOSFET N-CH 60V 10A 3-Pin (3 Tab) TO-220
French Electronic Distributor since 1988
Trans MOSFET N-CH 60V 10A 3-Pin (3 Tab) TO-220
French Electronic Distributor since 1988
The three parts on the right have similar specifications to IRFZ14.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRFZ14Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTubeObsolete1 (Unlimited)175°C-55°C60VMOSFET (Metal Oxide)10A143W TcSingle43W10 nsN-Channel200mOhm @ 6A, 10V4V @ 250μA300pF @ 25V10A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns10A20V60V300pF200mOhm200 mΩ9.01mm10.41mm4.7mmNon-RoHS CompliantContains Lead-------------------------
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTubeObsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 45W Tc---N-Channel70m Ω @ 10A, 10V4V @ 250μA370pF @ 25V17A Tc20nC @ 10V-55V10V±20V-----------Non-RoHS Compliant-NOSILICONHEXFET®1997e33EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLE26040R-PSIP-T31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING17A0.07Ohm68A55V71 mJ
-
-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTubeObsolete1 (Unlimited)---MOSFET (Metal Oxide)--3.8W Ta 94W Tc---N-Channel17.5m Ω @ 25A, 10V4V @ 250μA1470pF @ 25V49A Tc63nC @ 10V-55V10V±20V-----------Non-RoHS Compliant-NOSILICONHEXFET®2001-3--AVALANCHE RATED, HIGH RELIABILITY-SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSIP-T31SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING49A0.0175Ohm160A55V150 mJ
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)175°C-55°C-MOSFET (Metal Oxide)-13.7W Ta 43W TcSingle-10 nsN-Channel200mOhm @ 6A, 10V4V @ 250μA300pF @ 25V10A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns10A20V-300pF200mOhm200 mΩ---Non-RoHS Compliant----2016--------------------
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