Infineon Technologies IRFU5305
- Part Number:
- IRFU5305
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586858-IRFU5305
- Description:
- MOSFET P-CH 55V 31A I-PAK
- ECAD Model:
-
- Datasheet:
- IRFR/U5305
Infineon Technologies IRFU5305 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFU5305.
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2000
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- Additional FeatureHIGH RELIABILITY
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs65m Ω @ 16A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C31A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)31A
- Drain-source On Resistance-Max0.065Ohm
- Pulsed Drain Current-Max (IDM)110A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)280 mJ
- RoHS StatusNon-RoHS Compliant
IRFU5305 Description
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET? Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. Surface mounting with vapor phase, infrared, or wave soldering processes is possible with the D-Pak. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFU5305 Features
Ultra-Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
IRFU5305 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
International Rectifier's Fifth Generation HEXFETs use innovative processing techniques to provide ultra-low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET? Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications. Surface mounting with vapor phase, infrared, or wave soldering processes is possible with the D-Pak. For through-hole mounting applications, the straight lead version (IRFU series) is used. In normal surface mount applications, power dissipation levels of up to 1.5 watts are conceivable.
IRFU5305 Features
Ultra-Low On-Resistance
Surface Mount (IRFR5305)
Straight Lead (IRFU5305)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
IRFU5305 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
The three parts on the right have similar specifications to IRFU5305.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperaturePower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeReverse Recovery TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningResistanceVoltage - Rated DCCurrent RatingLead FreeSubcategoryView Compare
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IRFU5305Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~175°C TJTubeHEXFET®2000e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)HIGH RELIABILITYMOSFET (Metal Oxide)SINGLE24530R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAINP-ChannelSWITCHING65m Ω @ 16A, 10V4V @ 250μA1200pF @ 25V31A Tc63nC @ 10V55V10V±20V31A0.065Ohm110A55V280 mJNon-RoHS Compliant--------------------------------- -
Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1-110W Tc--N-Channel-16mOhm @ 32A, 10V4V @ 100μA2190pF @ 25V42A Tc75nC @ 10V75V10V±20V-----RoHS CompliantThrough Hole3IPAK (TO-251)Through Hole175°C-55°C110W16 ns65ns29 ns44 ns31 ns53A4V20V75V75V2.19nF47 ns16mOhm16 mΩ4 V6.22mm6.7056mm2.3876mmNo SVHCNo-----
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Through HoleTO-251-3 Short Leads, IPak, TO-251AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1-90W Tc--N-Channel-9.5mOhm @ 15A, 10V3V @ 250μA1996pF @ 10V75A Tc19nC @ 4.5V20V10V±20V-----RoHS CompliantThrough Hole4IPAK (TO-251)-175°C-55°C90W98 ns98ns-5 ns-62A3V20V20V20V1.996nF-14mOhm9.5 mΩ3 V---No SVHC-9.5Ohm20V62ALead Free-
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Through HoleTO-251-3 Short Leads, IPak, TO-251AANOSILICON-55°C~150°C TJTubeHEXFET®2001e3Obsolete1 (Unlimited)3EAR99MATTE TIN OVER NICKEL-MOSFET (Metal Oxide)SINGLE26030R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE120W TcENHANCEMENT MODEDRAINN-Channel-9m Ω @ 15A, 10V3V @ 250μA2672pF @ 16V90A Tc41nC @ 4.5V30V4.5V 10V±20V86A0.0065Ohm340A30V100 mJNon-RoHS Compliant-------------------------------FET General Purpose Power
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