IRFU320PBF

Vishay Siliconix IRFU320PBF

Part Number:
IRFU320PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2480486-IRFU320PBF
Description:
MOSFET N-CH 400V 3.1A I-PAK
ECAD Model:
Datasheet:
IRFU320PBF

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Specifications
Vishay Siliconix IRFU320PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU320PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Number of Pins
    3
  • Weight
    329.988449mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance
    1.8Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    3.1A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 42W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    42W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.8 Ω @ 1.9A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    14ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    3.1A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Height
    6.22mm
  • Length
    6.73mm
  • Width
    2.38mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFU320PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFU320PBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V


IRFU320PBF Applications
There are a lot of Vishay Siliconix
IRFU320PBF applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFU320PBF More Descriptions
Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:3.1A; On Resistance, Rds(on):1.8ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, 400V, 3.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:3.1A; Fall Time tf:13ns; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; Rise Time:14ns; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRFU320PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Recovery Time
    Surface Mount
    ECCN Code
    Terminal Position
    JESD-30 Code
    Qualification Status
    Configuration
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRFU320PBF
    IRFU320PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    329.988449mg
    SILICON
    -55°C~150°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    1.8Ohm
    Matte Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Powers
    400V
    MOSFET (Metal Oxide)
    260
    3.1A
    40
    3
    1
    1
    2.5W Ta 42W Tc
    Single
    ENHANCEMENT MODE
    42W
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 1.9A, 10V
    4V @ 250μA
    350pF @ 25V
    3.1A Tc
    20nC @ 10V
    14ns
    10V
    ±20V
    13 ns
    30 ns
    3.1A
    4V
    20V
    400V
    6.22mm
    6.73mm
    2.38mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU3504ZPBF
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    3
    -
    -
    -55°C~175°C TJ
    Tube
    2005
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    40V
    MOSFET (Metal Oxide)
    -
    42A
    -
    -
    -
    -
    90W Tc
    Single
    -
    90W
    -
    15 ns
    N-Channel
    -
    9m Ω @ 42A, 10V
    4V @ 250μA
    1510pF @ 25V
    42A Tc
    45nC @ 10V
    74ns
    10V
    ±20V
    38 ns
    30 ns
    77A
    4V
    20V
    40V
    6.1mm
    6.6mm
    2.3mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    27 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFU3709
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2001
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN OVER NICKEL
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    30
    -
    1
    -
    120W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    -
    9m Ω @ 15A, 10V
    3V @ 250μA
    2672pF @ 16V
    90A Tc
    41nC @ 4.5V
    -
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    NO
    EAR99
    SINGLE
    R-PSIP-T3
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    30V
    86A
    0.0065Ohm
    340A
    30V
    100 mJ
  • IRFU010
    -
    Through Hole
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    2000
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    50V
    MOSFET (Metal Oxide)
    -
    8.2A
    -
    -
    -
    -
    25W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    200m Ω @ 4.2A, 10V
    4V @ 250μA
    250pF @ 25V
    8.2A Tc
    10nC @ 10V
    -
    10V
    ±20V
    -
    -
    8.2A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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