Vishay Siliconix IRFU320PBF
- Part Number:
- IRFU320PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2480486-IRFU320PBF
- Description:
- MOSFET N-CH 400V 3.1A I-PAK
- Datasheet:
- IRFU320PBF
Vishay Siliconix IRFU320PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFU320PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins3
- Weight329.988449mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Resistance1.8Ohm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating3.1A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 42W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation42W
- Case ConnectionDRAIN
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.8 Ω @ 1.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.1A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time14ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)3.1A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Height6.22mm
- Length6.73mm
- Width2.38mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFU320PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFU320PBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V
IRFU320PBF Applications
There are a lot of Vishay Siliconix
IRFU320PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.1A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 30 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFU320PBF Features
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
a threshold voltage of 4V
IRFU320PBF Applications
There are a lot of Vishay Siliconix
IRFU320PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFU320PBF More Descriptions
Single N-Channel 400 V 1.8 Ohms Through Hole Power Mosfet - IPAK (TO-251)
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:3.1A; On Resistance, Rds(on):1.8ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, 400V, 3.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:3.1A; Fall Time tf:13ns; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; Rise Time:14ns; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:400V; Continuous Drain Current, Id:3.1A; On Resistance, Rds(on):1.8ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
MOSFET, N, 400V, 3.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:3.1A; Fall Time tf:13ns; Junction to Case Thermal Resistance A:3°C/W; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; Rise Time:14ns; Termination Type:Through Hole; Turn Off Time:30ns; Turn On Time:10ns; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRFU320PBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesRecovery TimeSurface MountECCN CodeTerminal PositionJESD-30 CodeQualification StatusConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
-
IRFU320PBF8 WeeksThrough HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3329.988449mgSILICON-55°C~150°C TJTube2008e3yesActive1 (Unlimited)31.8OhmMatte Tin (Sn)AVALANCHE RATEDFET General Purpose Powers400VMOSFET (Metal Oxide)2603.1A403112.5W Ta 42W TcSingleENHANCEMENT MODE42WDRAIN10 nsN-ChannelSWITCHING1.8 Ω @ 1.9A, 10V4V @ 250μA350pF @ 25V3.1A Tc20nC @ 10V14ns10V±20V13 ns30 ns3.1A4V20V400V6.22mm6.73mm2.38mmUnknownNoROHS3 CompliantLead Free---------------
-
-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA3---55°C~175°C TJTube2005--Obsolete1 (Unlimited)-----40VMOSFET (Metal Oxide)-42A----90W TcSingle-90W-15 nsN-Channel-9m Ω @ 42A, 10V4V @ 250μA1510pF @ 25V42A Tc45nC @ 10V74ns10V±20V38 ns30 ns77A4V20V40V6.1mm6.6mm2.3mmNo SVHCNoRoHS CompliantLead FreeHEXFET®27 ns------------
-
--Through HoleTO-251-3 Short Leads, IPak, TO-251AA--SILICON-55°C~150°C TJTube2001e3-Obsolete1 (Unlimited)3-MATTE TIN OVER NICKEL-FET General Purpose Power-MOSFET (Metal Oxide)260-30-1-120W Tc-ENHANCEMENT MODE-DRAIN-N-Channel-9m Ω @ 15A, 10V3V @ 250μA2672pF @ 16V90A Tc41nC @ 4.5V-4.5V 10V±20V-----------Non-RoHS Compliant-HEXFET®-NOEAR99SINGLER-PSIP-T3Not QualifiedSINGLE WITH BUILT-IN DIODE30V86A0.0065Ohm340A30V100 mJ
-
-Through HoleThrough HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~150°C TJTube2000--Obsolete1 (Unlimited)-----50VMOSFET (Metal Oxide)-8.2A----25W Tc-----N-Channel-200m Ω @ 4.2A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-10V±20V--8.2A--------Non-RoHS CompliantContains Lead--------------
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
01 November 2023
Do You Know the CD4046BE CMOS Micropower Phase Locked Loop?
Ⅰ. What is a phase locked loop?Ⅱ. Overview of CD4046BEⅢ. Symbol, footprint and pin configuration of CD4046BEⅣ. What are the features of CD4046BE?Ⅴ. Technical parameters of CD4046BEⅥ. How... -
02 November 2023
MPX2010DP Pressure Sensor: Manufacturer, Pin Configuration, and Applications
Ⅰ. What is a pressure sensor?Ⅱ. Overview of MPX2010DP pressure sensorⅢ. Manufacturer of MPX2010DP pressure sensorⅣ. MPX2010DP symbol, footprint and pin configurationⅤ. Features of MPX2010DP pressure sensorⅥ. Technical... -
02 November 2023
S8050 Bipolar Transistor: Manufacturer, Specifications, S8050 vs SS8050 and More Details
Ⅰ. Introduction to S8050 transistorⅡ. Manufacturer of S8050 transistorⅢ. Specifications of S8050 transistorⅣ. Symbol, footprint and pin configuration of S8050 transistorⅤ. What are the features of S8050 transistor?Ⅵ.... -
03 November 2023
ULN2003AD Equivalents, Symbol, Working Principle and Layout Guidelines
Ⅰ. Overview of ULN2003ADⅡ. Symbol, footprint and pin configuration of ULN2003ADⅢ. Features of ULN2003ADⅣ. Technical parameters of ULN2003ADⅤ. Working principle of ULN2003ADⅥ. Layout guidelines for ULN2003ADⅦ. What are...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.