IRFSL4321PBF

Infineon Technologies IRFSL4321PBF

Part Number:
IRFSL4321PBF
Manufacturer:
Infineon Technologies
Ventron No:
3586856-IRFSL4321PBF
Description:
MOSFET N-CH 150V 83A TO-262
ECAD Model:
Datasheet:
IRFSL4321PBF

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Specifications
Infineon Technologies IRFSL4321PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFSL4321PBF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-262-3 Long Leads, I2Pak, TO-262AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2010
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    150V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    83A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    350W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    330W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    15m Ω @ 33A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4460pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    85A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    60ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    83A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain to Source Breakdown Voltage
    150V
  • Height
    9.65mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRFSL4321PBF Overview
The maximum input capacitance of this device is 4460pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 83A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRFSL4321PBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 5V


IRFSL4321PBF Applications
There are a lot of Infineon Technologies
IRFSL4321PBF applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFSL4321PBF More Descriptions
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Product Comparison
The three parts on the right have similar specifications to IRFSL4321PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Terminal Form
    JESD-30 Code
    Configuration
    Drain to Source Voltage (Vdss)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Contact Plating
    Radiation Hardening
    Termination
    Resistance
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    View Compare
  • IRFSL4321PBF
    IRFSL4321PBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2010
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    150V
    MOSFET (Metal Oxide)
    260
    83A
    30
    Not Qualified
    1
    350W Tc
    Single
    ENHANCEMENT MODE
    330W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    15m Ω @ 33A, 10V
    5V @ 250μA
    4460pF @ 25V
    85A Tc
    110nC @ 10V
    60ns
    10V
    ±30V
    35 ns
    25 ns
    83A
    5V
    30V
    75A
    150V
    9.65mm
    10.668mm
    4.826mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS4310TRRPBF
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    260
    -
    30
    Not Qualified
    1
    300W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    SWITCHING
    7m Ω @ 75A, 10V
    4V @ 250μA
    7670pF @ 50V
    130A Tc
    250nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    75A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    YES
    SINGLE
    GULL WING
    R-PSSO-G2
    SINGLE WITH BUILT-IN DIODE
    100V
    0.007Ohm
    550A
    100V
    980 mJ
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS33N15DTRLP
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    -
    -
    150V
    MOSFET (Metal Oxide)
    260
    33A
    30
    -
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    38ns
    10V
    ±30V
    21 ns
    23 ns
    33A
    -
    30V
    -
    150V
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    -
    GULL WING
    R-PSSO-G2
    -
    -
    0.056Ohm
    -
    -
    -
    14 Weeks
    Tin
    No
    -
    -
    -
    -
    -
  • IRFS3307ZPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    -
    Discontinued
    1 (Unlimited)
    -
    EAR99
    -
    -
    75V
    MOSFET (Metal Oxide)
    -
    120A
    -
    -
    -
    230W Tc
    Single
    -
    230W
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    10V
    ±20V
    65 ns
    38 ns
    120A
    4V
    20V
    -
    75V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    SMD/SMT
    5.8MOhm
    75V
    50 ns
    4 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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