Infineon Technologies IRFSL4321PBF
- Part Number:
- IRFSL4321PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586856-IRFSL4321PBF
- Description:
- MOSFET N-CH 150V 83A TO-262
- Datasheet:
- IRFSL4321PBF
Infineon Technologies IRFSL4321PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFSL4321PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2010
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Current Rating83A
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max350W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation330W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 33A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4460pF @ 25V
- Current - Continuous Drain (Id) @ 25°C85A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)83A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)75A
- Drain to Source Breakdown Voltage150V
- Height9.65mm
- Length10.668mm
- Width4.826mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRFSL4321PBF Overview
The maximum input capacitance of this device is 4460pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 83A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFSL4321PBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 5V
IRFSL4321PBF Applications
There are a lot of Infineon Technologies
IRFSL4321PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4460pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 83A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 25 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IRFSL4321PBF Features
a continuous drain current (ID) of 83A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 5V
IRFSL4321PBF Applications
There are a lot of Infineon Technologies
IRFSL4321PBF applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRFSL4321PBF More Descriptions
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHSInfineon SCT
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
The three parts on the right have similar specifications to IRFSL4321PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTerminal PositionTerminal FormJESD-30 CodeConfigurationDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeContact PlatingRadiation HardeningTerminationResistanceDual Supply VoltageRecovery TimeNominal VgsView Compare
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IRFSL4321PBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTubeHEXFET®2010e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power150VMOSFET (Metal Oxide)26083A30Not Qualified1350W TcSingleENHANCEMENT MODE330WDRAIN18 nsN-ChannelSWITCHING15m Ω @ 33A, 10V5V @ 250μA4460pF @ 25V85A Tc110nC @ 10V60ns10V±30V35 ns25 ns83A5V30V75A150V9.65mm10.668mm4.826mmNo SVHCRoHS CompliantLead Free-------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power-MOSFET (Metal Oxide)260-30Not Qualified1300W Tc-ENHANCEMENT MODE-DRAIN-N-ChannelSWITCHING7m Ω @ 75A, 10V4V @ 250μA7670pF @ 50V130A Tc250nC @ 10V-10V±20V-----75A-----ROHS3 Compliant-YESSINGLEGULL WINGR-PSSO-G2SINGLE WITH BUILT-IN DIODE100V0.007Ohm550A100V980 mJ--------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®2000e3Not For New Designs1 (Unlimited)2EAR99--150VMOSFET (Metal Oxide)26033A30-13.8W Ta 170W TcSingleENHANCEMENT MODE3.8WDRAIN13 nsN-ChannelSWITCHING56m Ω @ 20A, 10V5.5V @ 250μA2020pF @ 25V33A Tc90nC @ 10V38ns10V±30V21 ns23 ns33A-30V-150V----ROHS3 CompliantContains Lead--GULL WINGR-PSSO-G2--0.056Ohm---14 WeeksTinNo-----
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2006-Discontinued1 (Unlimited)-EAR99--75VMOSFET (Metal Oxide)-120A---230W TcSingle-230W-15 nsN-Channel-5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V64ns10V±20V65 ns38 ns120A4V20V-75V2.39mm6.73mm6.22mmNo SVHCROHS3 CompliantLead Free------------NoSMD/SMT5.8MOhm75V50 ns4 V
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