Infineon Technologies IRFSL4020PBF
- Part Number:
- IRFSL4020PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3587072-IRFSL4020PBF
- Description:
- MOSFET N-CH 200V 18A TO262
- ECAD Model:
-
- Datasheet:
- IRFSL4020PBF
Infineon Technologies IRFSL4020PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFSL4020PBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-262-3 Long Leads, I2Pak, TO-262AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - with Nickel (Ni) barrier
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Number of Elements1
- Power Dissipation-Max100W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation100W
- Case ConnectionDRAIN
- Turn On Delay Time7.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs105m Ω @ 11A, 10V
- Vgs(th) (Max) @ Id4.9V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 50V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Rise Time12ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)6.3 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)18A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.105Ohm
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)52A
- Avalanche Energy Rating (Eas)94 mJ
- Height4.83mm
- Length10.67mm
- Width15.01mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRFSL4020PBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 94 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFSL4020PBF Features
the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 52A.
IRFSL4020PBF Applications
There are a lot of Infineon Technologies
IRFSL4020PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 94 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 16 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.8 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFSL4020PBF Features
the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 52A.
IRFSL4020PBF Applications
There are a lot of Infineon Technologies
IRFSL4020PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFSL4020PBF More Descriptions
200V Single N-Channel Digital Audio HEXFET Power MOSFET Switch in a TO-262 package
Trans MOSFET N-CH Si 200V 18A 3-Pin(3 Tab) TO-262 Tube
Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Trans MOSFET N-CH Si 200V 18A 3-Pin(3 Tab) TO-262 Tube
Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
The three parts on the right have similar specifications to IRFSL4020PBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageSeriesMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxWeightNumber of ChannelsTerminationResistanceVoltage - Rated DCCurrent RatingThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRFSL4020PBFThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~175°C TJTube2009e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose PowerMOSFET (Metal Oxide)260401100W TcSingleENHANCEMENT MODE100WDRAIN7.8 nsN-ChannelSWITCHING105m Ω @ 11A, 10V4.9V @ 100μA1200pF @ 50V18A Tc29nC @ 10V12ns10V±20V6.3 ns16 ns18A20V0.105Ohm200V52A94 mJ4.83mm10.67mm15.01mmNoRoHS Compliant--------------------- -
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTape & Reel (TR)2010-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--1190W TcSingle-190W-18 nsN-Channel-14mOhm @ 44A, 10V4V @ 100μA3550pF @ 50V73A Tc140nC @ 10V87ns10V±20V70 ns53 ns73A20V-100V--4.826mm10.668mm9.65mmNoRoHS CompliantD2PAKHEXFET®175°C-55°C100V3.55nF14mOhm14 mΩ------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~150°C TJTape & Reel (TR)2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)---170W TcSingle---14 nsN-Channel-520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V35ns10V±30V28 ns32 ns11A30V----4.83mm10.67mm9.65mm-Non-RoHS CompliantD2PAK-150°C-55°C500V1.423nF520mOhm520 mΩ1.437803g1----------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTube2006-Discontinued1 (Unlimited)-EAR99--MOSFET (Metal Oxide)---230W TcSingle-230W-15 nsN-Channel-5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V64ns10V±20V65 ns38 ns120A20V-75V--2.39mm6.73mm6.22mmNoROHS3 Compliant-HEXFET®--------SMD/SMT5.8MOhm75V120A4V75V50 ns4 VNo SVHCLead Free
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