Infineon Technologies IRFSL3307ZPBF

Name: IRFSL3307ZPBF
Brand: Infineon Technologies
SKU: 3586840-IRFSL3307ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFSL3307ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586840-IRFSL3307ZPBF

Description:: MOSFET N-CH 75V 120A TO-262

ECAD Model:

Datasheet:: IRFSL3307ZPBF

Specifications

Infineon Technologies IRFSL3307ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFSL3307ZPBF.

Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package
TO-262
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
230W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds
4750pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Drain to Source Voltage (Vdss)
75V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V

Description

IRFSL3307ZPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4750pF @ 50V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 75V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFSL3307ZPBF Features
a 75V drain to source voltage (Vdss)

IRFSL3307ZPBF Applications
There are a lot of Infineon Technologies
IRFSL3307ZPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRFSL3307ZPBF More Descriptions

75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 75V, 120A, 5.8 mOhm, 79 nC Qg, TO-262
MOSFET N-CH 75V 120A TO-262

Product Comparison

The three parts on the right have similar specifications to IRFSL3307ZPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Radiation Hardening

Lead Free

Termination

Threshold Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

View Compare
IRFSL3307ZPBF

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262

-55°C~175°C TJ

Tube

HEXFET®

2011

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

230W Tc

N-Channel

5.8mOhm @ 75A, 10V

4V @ 150μA

4750pF @ 50V

120A Tc

110nC @ 10V

75V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFS4310TRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

300W Tc

N-Channel

7m Ω @ 75A, 10V

4V @ 250μA

7670pF @ 50V

130A Tc

250nC @ 10V

100V

10V

±20V

YES

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

75A

0.007Ohm

550A

100V

980 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFSL3307ZPBF vs IRFS4310TRRPBF
IRFS33N15DTRLP

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

Not For New Designs

1 (Unlimited)

MOSFET (Metal Oxide)

3.8W Ta 170W Tc

N-Channel

56m Ω @ 20A, 10V

5.5V @ 250μA

2020pF @ 25V

33A Tc

90nC @ 10V

-

10V

±30V

-

SILICON

e3

2

EAR99

-

-

-

GULL WING

260

30

R-PSSO-G2

-

1

-

ENHANCEMENT MODE

DRAIN

SWITCHING

-

0.056Ohm

-

-

-

ROHS3 Compliant

14 Weeks

Tin

Surface Mount

3

150V

33A

Single

3.8W

13 ns

38ns

21 ns

23 ns

33A

30V

150V

No

Contains Lead

-

-

-

-

-

-

-

-

IRFSL3307ZPBF vs IRFS33N15DTRLP
IRFS4620PBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-55°C~175°C TJ

Tube

HEXFET®

2007

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

144W Tc

N-Channel

77.5m Ω @ 15A, 10V

5V @ 100μA

1710pF @ 50V

24A Tc

38nC @ 10V

-

10V

±20V

-

-

-

-

EAR99

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

14 Weeks

-

Surface Mount

3

-

-

Single

144W

13.4 ns

22.4ns

14.8 ns

25.4 ns

24A

20V

200V

-

Lead Free

SMD/SMT

5V

200V

5 V

4.826mm

10.668mm

9.65mm

No SVHC

IRFSL3307ZPBF vs IRFS4620PBF