Infineon Technologies IRFS4321PBF
- Part Number:
- IRFS4321PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070169-IRFS4321PBF
- Description:
- MOSFET N-CH 150V 83A D2PAK
- Datasheet:
- IRFS4321PBF
Infineon Technologies IRFS4321PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4321PBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance15MOhm
- Voltage - Rated DC150V
- TechnologyMOSFET (Metal Oxide)
- Current Rating83A
- Number of Elements1
- Power Dissipation-Max350W Tc
- Element ConfigurationSingle
- Power Dissipation330W
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs15m Ω @ 33A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4460pF @ 25V
- Current - Continuous Drain (Id) @ 25°C85A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time60ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)83A
- Threshold Voltage5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage150V
- Dual Supply Voltage150V
- Recovery Time130 ns
- Nominal Vgs5 V
- Height4.826mm
- Length10.668mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS4321PBF Description
The Infineon Technologies IRFS4321PBF is 150V Single N-Channel HEXFET? Power MOSFET in a D2-Pak package.
IRFS4321PBF Features
Optimized for the broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate-drive voltage (called normal level)
Industry-standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
IRFS4321PBF Applications
Motion Control Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
The Infineon Technologies IRFS4321PBF is 150V Single N-Channel HEXFET? Power MOSFET in a D2-Pak package.
IRFS4321PBF Features
Optimized for the broadest availability from distribution partners
Product qualification according to JEDEC standard
Optimized for 10 V gate-drive voltage (called normal level)
Industry-standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
IRFS4321PBF Applications
Motion Control Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High-Frequency Circuits
IRFS4321PBF More Descriptions
Transistor MOSFET Negative Channel 150 Volt 83A 3-Pin(2 Tab) D2PAK
IRFS4321PBF N-channel MOSFET Transistor, 83 A, 150 V, 3-Pin D2PAK
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
IRFS4321PBF N-channel MOSFET Transistor, 83 A, 150 V, 3-Pin D2PAK
Single N-Channel 150 V 15 mOhm 71 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:83A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4321; Current Id Max:83A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
The three parts on the right have similar specifications to IRFS4321PBF.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationECCN CodeResistanceVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxLifecycle StatusFactory Lead TimeWeightTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishJESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)View Compare
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IRFS4321PBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTubeHEXFET®2007Discontinued1 (Unlimited)SMD/SMTEAR9915MOhm150VMOSFET (Metal Oxide)83A1350W TcSingle330W18 nsN-Channel15m Ω @ 33A, 10V5V @ 250μA4460pF @ 25V85A Tc110nC @ 10V60ns10V±30V35 ns25 ns83A5V30V150V150V130 ns5 V4.826mm10.668mm9.65mmNo SVHCNoROHS3 CompliantLead Free-----------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)HEXFET®2010Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1190W TcSingle190W18 nsN-Channel14mOhm @ 44A, 10V4V @ 100μA3550pF @ 50V73A Tc140nC @ 10V87ns10V±20V70 ns53 ns73A-20V100V---4.826mm10.668mm9.65mm-NoRoHS Compliant-D2PAK175°C-55°C100V3.55nF14mOhm14 mΩ---------------
-
Through HoleThrough HoleTO-3P-3 Full Pack--55°C~150°C TJTube--Not For New Designs1 (Unlimited)-EAR99--MOSFET (Metal Oxide)-196W TcSingle96W45 nsN-Channel390m Ω @ 4.8A, 10V4V @ 250μA3800pF @ 25V9.6A Tc113nC @ 10V130ns10V±30V125 ns260 ns9.6A-30V500V-------NoROHS3 Compliant--------ACTIVE, NOT REC (Last Updated: 3 days ago)4 Weeks6.962gSILICONe3yes3Tin (Sn)R-PSFM-T3ENHANCEMENT MODEISOLATEDSWITCHING0.39Ohm38.4A990 mJ
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTubeHEXFET®2006Discontinued1 (Unlimited)SMD/SMTEAR995.8MOhm75VMOSFET (Metal Oxide)120A-230W TcSingle230W15 nsN-Channel5.8m Ω @ 75A, 10V4V @ 150μA4750pF @ 50V120A Tc110nC @ 10V64ns10V±20V65 ns38 ns120A4V20V75V75V50 ns4 V2.39mm6.73mm6.22mmNo SVHCNoROHS3 CompliantLead Free----------------------
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