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IRFS4115PBF

Infineon Technologies IRFS4115PBF

Part Number:
IRFS4115PBF
Manufacturer:
Infineon Technologies
Ventron No:
3070281-IRFS4115PBF
Description:
MOSFET N-CH 150V 195A D2-PAK
ECAD Model:
Datasheet:
IRFS4115PBF

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Specifications
Infineon Technologies IRFS4115PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4115PBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    12.1MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    375W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    375W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    12.1m Ω @ 62A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5270pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    120nC @ 10V
  • Rise Time
    73ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    39 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    99A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Dual Supply Voltage
    150V
  • Nominal Vgs
    5 V
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS4115PBF Description
IRFS4115PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 150V. The operating temperature of IRFS4115PBF is -55°C~175°C TJ and its maximum power dissipation is 375W. IRFS4115PBF has 3 pins and it is available in TO-263-3, D2Pak (2 Leads Tab), and TO-263AB packaging way. The Turn-On Delay Time of IRFS4115PBF is 18 ns and its Turn-Off Delay Time is 41 ns.

IRFS4115PBF Features
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free

IRFS4115PBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFS4115PBF More Descriptions
Single N-Channel 150 V 12.1 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 150V 195A 3-Pin(2 Tab) D2PAK Tube
Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 150V 99A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:150V; On Resistance Rds(on):12.1mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:99A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Product Comparison
The three parts on the right have similar specifications to IRFS4115PBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Factory Lead Time
    Contact Plating
    Voltage - Rated DC
    Current Rating
    Drain-source On Resistance-Max
    Radiation Hardening
    Lifecycle Status
    Weight
    Pbfree Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Recovery Time
    View Compare
  • IRFS4115PBF
    IRFS4115PBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    2
    SMD/SMT
    EAR99
    12.1MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    375W Tc
    Single
    ENHANCEMENT MODE
    375W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    12.1m Ω @ 62A, 10V
    5V @ 250μA
    5270pF @ 50V
    195A Tc
    120nC @ 10V
    73ns
    10V
    ±20V
    39 ns
    41 ns
    99A
    5V
    20V
    150V
    150V
    5 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFS33N15DTRLP
    IRFS33N15DTRLP
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Not For New Designs
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    38ns
    10V
    ±30V
    21 ns
    23 ns
    33A
    -
    30V
    150V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    14 Weeks
    Tin
    150V
    33A
    0.056Ohm
    No
    -
    -
    -
    -
    -
    -
    IRFS4115PBF vs IRFS33N15DTRLP
  • IRFS450B
    IRFS450B
    Fairchild/ON Semiconductor
    Through Hole
    Through Hole
    TO-3P-3 Full Pack
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    -
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    EAR99
    -
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    R-PSFM-T3
    -
    1
    96W Tc
    Single
    ENHANCEMENT MODE
    96W
    ISOLATED
    45 ns
    N-Channel
    SWITCHING
    390m Ω @ 4.8A, 10V
    4V @ 250μA
    3800pF @ 25V
    9.6A Tc
    113nC @ 10V
    130ns
    10V
    ±30V
    125 ns
    260 ns
    9.6A
    -
    30V
    500V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    4 Weeks
    -
    -
    -
    0.39Ohm
    No
    ACTIVE, NOT REC (Last Updated: 3 days ago)
    6.962g
    yes
    38.4A
    990 mJ
    -
    IRFS4115PBF vs IRFS450B
  • IRFS3307ZPBF
    IRFS3307ZPBF
    Infineon Technologies
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    -
    Discontinued
    1 (Unlimited)
    -
    SMD/SMT
    EAR99
    5.8MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    230W Tc
    Single
    -
    230W
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    10V
    ±20V
    65 ns
    38 ns
    120A
    4V
    20V
    75V
    75V
    4 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    75V
    120A
    -
    No
    -
    -
    -
    -
    -
    50 ns
    IRFS4115PBF vs IRFS3307ZPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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