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IRFS4115-7PPBF

Infineon Technologies IRFS4115-7PPBF

Part Number:
IRFS4115-7PPBF
Manufacturer:
Infineon Technologies
Ventron No:
2493671-IRFS4115-7PPBF
Description:
MOSFET N-CH 150V 105A D2PAK-7
ECAD Model:
Datasheet:
IRFS4115-7PPBF

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Specifications
Infineon Technologies IRFS4115-7PPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS4115-7PPBF.
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
  • Number of Pins
    7
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    11.8MOhm
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G6
  • Number of Elements
    1
  • Power Dissipation-Max
    380W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    380W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    11.8m Ω @ 63A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5320pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    105A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    110nC @ 10V
  • Rise Time
    50ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    23 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    105A
  • Threshold Voltage
    5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    150V
  • Pulsed Drain Current-Max (IDM)
    420A
  • Dual Supply Voltage
    150V
  • Avalanche Energy Rating (Eas)
    230 mJ
  • Nominal Vgs
    5 V
  • Height
    4.572mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFS4115-7PPBF Description
The IRFS4115-7PPBF is a HEXFET® Power MOSFET. A special kind of metal-oxide-semiconductor field-effect transistor (MOSFET) made to handle high power levels is known as a power MOSFET. High switching speed and good efficiency at low voltages are its key benefits over other power semiconductor devices like insulated-gate bipolar transistors (IGBT) or thyristors. It has an easy-to-drive gate that it shares with the IGBT. They occasionally have low gain to the point that a larger gate voltage is required than the control voltage.

IRFS4115-7PPBF Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA

IRFS4115-7PPBF Applications
High Speed Power Switching
Hard Switched and High Frequency Circuits
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
IRFS4115-7PPBF More Descriptions
150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHSInfineon SCT
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7
Trans MOSFET N-CH 150V 105A 7-Pin(6 Tab) D2PAK Tube
MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W
Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH 150V 105A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
Product Comparison
The three parts on the right have similar specifications to IRFS4115-7PPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Contact Plating
    Voltage - Rated DC
    Current Rating
    Drain-source On Resistance-Max
    Recovery Time
    View Compare
  • IRFS4115-7PPBF
    IRFS4115-7PPBF
    Infineon Technologies
    13 Weeks
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
    7
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    e3
    Discontinued
    1 (Unlimited)
    6
    SMD/SMT
    EAR99
    11.8MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    FET General Purpose Power
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G6
    1
    380W Tc
    Single
    ENHANCEMENT MODE
    380W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    11.8m Ω @ 63A, 10V
    5V @ 250μA
    5320pF @ 50V
    105A Tc
    110nC @ 10V
    50ns
    10V
    ±20V
    23 ns
    37 ns
    105A
    5V
    20V
    150V
    420A
    150V
    230 mJ
    5 V
    4.572mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • IRFS33N15DTRLP
    IRFS33N15DTRLP
    Infineon Technologies
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    e3
    Not For New Designs
    1 (Unlimited)
    2
    -
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    30
    R-PSSO-G2
    1
    3.8W Ta 170W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    13 ns
    N-Channel
    SWITCHING
    56m Ω @ 20A, 10V
    5.5V @ 250μA
    2020pF @ 25V
    33A Tc
    90nC @ 10V
    38ns
    10V
    ±30V
    21 ns
    23 ns
    33A
    -
    30V
    150V
    -
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Contains Lead
    Tin
    150V
    33A
    0.056Ohm
    -
    IRFS4115-7PPBF vs IRFS33N15DTRLP
  • IRFS3307ZPBF
    IRFS3307ZPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2006
    -
    Discontinued
    1 (Unlimited)
    -
    SMD/SMT
    EAR99
    5.8MOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    230W Tc
    Single
    -
    230W
    -
    15 ns
    N-Channel
    -
    5.8m Ω @ 75A, 10V
    4V @ 150μA
    4750pF @ 50V
    120A Tc
    110nC @ 10V
    64ns
    10V
    ±20V
    65 ns
    38 ns
    120A
    4V
    20V
    75V
    -
    75V
    -
    4 V
    2.39mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    75V
    120A
    -
    50 ns
    IRFS4115-7PPBF vs IRFS3307ZPBF
  • IRFS4620PBF
    IRFS4620PBF
    Infineon Technologies
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2007
    -
    Discontinued
    1 (Unlimited)
    -
    SMD/SMT
    EAR99
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    144W Tc
    Single
    -
    144W
    -
    13.4 ns
    N-Channel
    -
    77.5m Ω @ 15A, 10V
    5V @ 100μA
    1710pF @ 50V
    24A Tc
    38nC @ 10V
    22.4ns
    10V
    ±20V
    14.8 ns
    25.4 ns
    24A
    5V
    20V
    200V
    -
    200V
    -
    5 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    IRFS4115-7PPBF vs IRFS4620PBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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