Infineon Technologies IRFS3206PBF
- Part Number:
- IRFS3206PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479429-IRFS3206PBF
- Description:
- MOSFET N-CH 60V 120A D2PAK
- ECAD Model:
-
- Datasheet:
- IRFS3206PBF
Infineon Technologies IRFS3206PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS3206PBF.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating210A
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Power Dissipation300mW
- Turn On Delay Time19 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3m Ω @ 75A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds6540pF @ 50V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs170nC @ 10V
- Rise Time82ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)83 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)210A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Recovery Time50 ns
- Height4.826mm
- Length10.67mm
- Width9.65mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFS3206PBF Description
The IRFS3206PBF is a single N-channel HEXFET ?Power MOSFET with increased gate, avalanche, and dynamic dV/dt toughness. It is appropriate for high-efficiency synchronous rectification in SMPS, hard-switched, and high-frequency circuits.
IRFS3206PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
IRFS3206PBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
The IRFS3206PBF is a single N-channel HEXFET ?Power MOSFET with increased gate, avalanche, and dynamic dV/dt toughness. It is appropriate for high-efficiency synchronous rectification in SMPS, hard-switched, and high-frequency circuits.
IRFS3206PBF Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
RoHS Compliant, Halogen-Free
IRFS3206PBF Applications
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
IRFS3206PBF More Descriptions
IRFS3206PBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin D2PAK
Trans MOSFET N-CH Si 60V 210A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
MOSFET, N, 60V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Trans MOSFET N-CH Si 60V 210A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK
Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
MOSFET, N, 60V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRFS3206PBF.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRecovery TimeHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureNumber of ElementsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningWeightNumber of ChannelsFactory Lead TimeTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)View Compare
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IRFS3206PBFTinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTubeHEXFET®2007Discontinued1 (Unlimited)EAR9960VMOSFET (Metal Oxide)210A300W TcSingle300mW19 nsN-Channel3m Ω @ 75A, 10V4V @ 150μA6540pF @ 50V120A Tc170nC @ 10V82ns10V±20V83 ns55 ns210A4V20V60V50 ns4.826mm10.67mm9.65mmNo SVHCROHS3 CompliantLead Free-------------------------- -
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)HEXFET®2010Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-190W TcSingle190W18 nsN-Channel14mOhm @ 44A, 10V4V @ 100μA3550pF @ 50V73A Tc140nC @ 10V87ns10V±20V70 ns53 ns73A-20V100V-4.826mm10.668mm9.65mm-RoHS Compliant-D2PAK175°C-55°C1100V3.55nF14mOhm14 mΩNo----------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~150°C TJTape & Reel (TR)-2016Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-170W TcSingle-14 nsN-Channel520mOhm @ 6.6A, 10V4V @ 250μA1423pF @ 25V11A Tc52nC @ 10V35ns10V±30V28 ns32 ns11A-30V--4.83mm10.67mm9.65mm-Non-RoHS Compliant-D2PAK150°C-55°C-500V1.423nF520mOhm520 mΩ-1.437803g1--------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3-55°C~175°C TJTape & Reel (TR)HEXFET®2012Active1 (Unlimited)EAR99-MOSFET (Metal Oxide)-140W Tc-140W13 nsN-Channel13.9m Ω @ 37A, 10V4V @ 100μA3180pF @ 50V61A Tc87nC @ 10V32ns10V±20V-28 ns61A2V20V100V----No SVHCROHS3 CompliantLead Free---1-------12 WeeksSILICON2FET General Purpose PowerSINGLEGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PSSO-G2SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING250A
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