Infineon Technologies IRFS23N20D

Name: IRFS23N20D
Brand: Infineon Technologies
SKU: 2492865-IRFS23N20D
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFS23N20D

Manufacturer:: Infineon Technologies

Ventron No:: 2492865-IRFS23N20D

Description:: MOSFET N-CH 200V 24A D2PAK

ECAD Model:

Datasheet:: IRFS23N20D

Specifications

Infineon Technologies IRFS23N20D technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFS23N20D.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2000
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 170W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Drain Current-Max (Abs) (ID)
24A
Drain-source On Resistance-Max
0.1Ohm
Pulsed Drain Current-Max (IDM)
96A
DS Breakdown Voltage-Min
200V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
Non-RoHS Compliant

Description

IRFS23N20D Description
IRFS23N20D is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 200V. The operating temperature of the IRFS23N20D is -55°C~175°C TJ and its maximum power dissipation is 170W Tc. IRFS23N20D has 2 pins and it is available in Tube packaging way.

IRFS23N20D Features
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current

IRFS23N20D Applications
High frequency DC-DC converters

IRFS23N20D More Descriptions

Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
CAP CER 33UF 50V X7R 2SMD

Product Comparison

The three parts on the right have similar specifications to IRFS23N20D.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

Lifecycle Status

Factory Lead Time

Weight

Pbfree Code

Element Configuration

Termination

Threshold Voltage

Dual Supply Voltage

Nominal Vgs

REACH SVHC

Lead Free

View Compare
IRFS23N20D

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2000

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

MOSFET (Metal Oxide)

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 170W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

100m Ω @ 14A, 10V

5.5V @ 250μA

1960pF @ 25V

24A Tc

86nC @ 10V

200V

10V

±30V

24A

0.1Ohm

96A

200V

250 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFS5615PBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

-

2008

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

144W Tc

-

-

N-Channel

-

42mOhm @ 21A, 10V

5V @ 100μA

1750pF @ 50V

33A Tc

40nC @ 10V

150V

10V

±20V

-

-

-

-

-

RoHS Compliant

Surface Mount

3

D2PAK

175°C

-55°C

144W

8.9 ns

23.1ns

13.1 ns

17.2 ns

33A

20V

150V

1.75nF

42mOhm

42 mΩ

4.826mm

10.668mm

9.652mm

No

-

-

-

-

-

-

-

-

-

-

-

IRFS23N20D vs IRFS5615PBF
IRFS450B

Fairchild/ON Semiconductor

Through Hole

TO-3P-3 Full Pack

-

SILICON

-55°C~150°C TJ

Tube

-

-

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

R-PSFM-T3

-

1

-

96W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

390m Ω @ 4.8A, 10V

4V @ 250μA

3800pF @ 25V

9.6A Tc

113nC @ 10V

-

10V

±30V

-

0.39Ohm

38.4A

-

990 mJ

ROHS3 Compliant

Through Hole

-

-

-

-

96W

45 ns

130ns

125 ns

260 ns

9.6A

30V

500V

-

-

-

-

-

-

No

ACTIVE, NOT REC (Last Updated: 3 days ago)

4 Weeks

6.962g

yes

Single

-

-

-

-

-

-

IRFS23N20D vs IRFS450B
IRFS4620PBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

2007

-

Discontinued

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

77.5m Ω @ 15A, 10V

5V @ 100μA

1710pF @ 50V

24A Tc

38nC @ 10V

-

10V

±20V

-

-

-

-

-

ROHS3 Compliant

Surface Mount

3

-

-

-

144W

13.4 ns

22.4ns

14.8 ns

25.4 ns

24A

20V

200V

-

-

-

4.826mm

10.668mm

9.65mm

-

-

14 Weeks

-

-

Single

SMD/SMT

5V

200V

5 V

No SVHC

Lead Free

IRFS23N20D vs IRFS4620PBF

Certification

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IRFS23N20D Specification

Part Number	Manufacturers	Description	Stock	Price
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	1 $1.9458 10 $1.7119 25 $1.692 100 $1.4165 250 $1.3691 500 $1.2503
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Compliant	1287	1 $2.96 10 $2.673 100 $2.1478
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Compliant	1287	1 $2.96 10 $2.673 100 $2.1478
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Compliant	800	800 $1.46426
IRFS23N20D DISTI #IRFS23N20D	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Not Compliant	0
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Compliant	0
IRFS23N20DTRRP DISTI #IRFS23N20DTRRP	Infineon Technologies AG	MOSFET N-CH 200V 24A D2PAK RoHS: Compliant	0
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	800 $1.4696
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	8 $1.9458 10 $1.7119 25 $1.692 100 $1.4165 250 $1.3691 500 $1.2503
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.9709 1600 $0.9359 3200 $0.9019 4800 $0.8709 8000 $0.8559
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	IRFS23N20DPBF N-channel MOSFET Transistor, 24 A, RoHS: Compliant	0	400 $1.66
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.1Ohm RoHS: Compliant	0	800 $1.48
IRFS23N20DTRRP DISTI #IRFS23N20DTRRP	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.1Ohm RoHS: Compliant	0	800 $1.252 1600 $1.227 4000 $1.189
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	Single N-Channel 200 V 3.8 W 57 nC Hexfet Power Mo RoHS: Compliant	70	10 $0.875 75 $0.805 400 $0.715
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET MOSFT 200V 24A 100mOhm 57nC RoHS: Compliant	667	1 $2.48 10 $2.11 100 $1.69 500 $1.48 800 $1.23
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC RoHS: Compliant	0
IRFS23N20DTRRP DISTI #IRFS23N20DTRRP	Infineon Technologies AG	MOSFET 200V Single NChannel HEXFET Power MOSFET RoHS: Compliant	0
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET, N-CH, 200V, 24A, TO-263AB RoHS: Compliant	399	1 $2.34 10 $2.19 100 $1.93 250 $1.83 500 $1.73 1000 $1.65
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	MOSFET, N, 200V, 24A, D2-PAK RoHS: Compliant	207	5 $5.08 25 $4.18 100 $3.39 250 $3.03
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	MOSFET, N-CH, 200V, 24A, TO-263AB RoHS: Compliant	549	1 $1.94 10 $1.65 100 $1.32 250 $1.14 500 $0.961
IRFS23N20DPBF DISTI #IRFS23N20DPBF	Infineon Technologies AG	MOSFET, N, 200V, 24A, D2-PAK RoHS: Compliant	207	1 $0.945 10 $0.902 100 $0.884
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	800 $1.33
IRFS23N20DTRLP DISTI #IRFS23N20DTRLP	Infineon Technologies AG	Trans MOSFET N-CH 200V 24A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	10 $1.7119 25 $1.692 100 $1.4165 250 $1.3691

IRFS23N~~(16)~~
IRFS23~~(16)~~
IRFS2~~(30)~~
IRFS~~(66)~~
IRF~~(69)~~

Infineon Technologies IRFS23N20D

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