Infineon Technologies IRFML8244TRPBF
- Part Number:
- IRFML8244TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2478955-IRFML8244TRPBF
- Description:
- MOSFET N-CH 25V 5.8A SOT23
- Datasheet:
- IRFML8244TRPBF
Infineon Technologies IRFML8244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFML8244TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Manufacturer Package IdentifierMicro3
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2008
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance41MOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max1.25W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time2.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs24m Ω @ 5.8A, 10V
- Vgs(th) (Max) @ Id2.35V @ 10μA
- Input Capacitance (Ciss) (Max) @ Vds430pF @ 10V
- Current - Continuous Drain (Id) @ 25°C5.8A Ta
- Gate Charge (Qg) (Max) @ Vgs5.4nC @ 10V
- Rise Time2.1ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)2.9 ns
- Turn-Off Delay Time9 ns
- Continuous Drain Current (ID)5.8A
- Threshold Voltage1.7V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)24A
- Recovery Time17 ns
- Nominal Vgs1.7 V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFML8244TRPBF Overview
A device's maximal input capacitance is 430pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.7V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRFML8244TRPBF Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 24A.
a threshold voltage of 1.7V
IRFML8244TRPBF Applications
There are a lot of Infineon Technologies
IRFML8244TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 430pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.7V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRFML8244TRPBF Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 24A.
a threshold voltage of 1.7V
IRFML8244TRPBF Applications
There are a lot of Infineon Technologies
IRFML8244TRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFML8244TRPBF More Descriptions
Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Single N-Channel 25 V 41 mOhm 5.4 nC HEXFET® Power Mosfet - SOT-23
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 25V 5.8A SOT23 / Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W
Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes |Infineon IRFML8244TRPBF.
Single N-Channel 25 V 41 mOhm 5.4 nC HEXFET® Power Mosfet - SOT-23
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 25V 5.8A SOT23 / Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W
Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes |Infineon IRFML8244TRPBF.
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