IRFML8244TRPBF

Infineon Technologies IRFML8244TRPBF

Part Number:
IRFML8244TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478955-IRFML8244TRPBF
Description:
MOSFET N-CH 25V 5.8A SOT23
ECAD Model:
Datasheet:
IRFML8244TRPBF

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Specifications
Infineon Technologies IRFML8244TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFML8244TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Manufacturer Package Identifier
    Micro3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    41MOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    1.25W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    2.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    24m Ω @ 5.8A, 10V
  • Vgs(th) (Max) @ Id
    2.35V @ 10μA
  • Input Capacitance (Ciss) (Max) @ Vds
    430pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    5.4nC @ 10V
  • Rise Time
    2.1ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    2.9 ns
  • Turn-Off Delay Time
    9 ns
  • Continuous Drain Current (ID)
    5.8A
  • Threshold Voltage
    1.7V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    24A
  • Recovery Time
    17 ns
  • Nominal Vgs
    1.7 V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFML8244TRPBF Overview
A device's maximal input capacitance is 430pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.7V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRFML8244TRPBF Features
a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 24A.
a threshold voltage of 1.7V


IRFML8244TRPBF Applications
There are a lot of Infineon Technologies
IRFML8244TRPBF applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFML8244TRPBF More Descriptions
Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Single N-Channel 25 V 41 mOhm 5.4 nC HEXFET® Power Mosfet - SOT-23
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHSInfineon SCT
MOSFET N-CH 25V 5.8A SOT23 / Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W
Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side
Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:5.8A; On Resistance Rds(On):0.02Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V Rohs Compliant: Yes |Infineon IRFML8244TRPBF.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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