IRFL9014PBF

Vishay Siliconix IRFL9014PBF

Part Number:
IRFL9014PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2488574-IRFL9014PBF
Description:
MOSFET P-CH 60V 1.8A SOT223
ECAD Model:
Datasheet:
IRFL9014PBF

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Specifications
Vishay Siliconix IRFL9014PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFL9014PBF.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Supplier Device Package
    SOT-223
  • Weight
    250.212891mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    500mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    -1.8A
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    60V
  • Power Dissipation-Max
    2W Ta 3.1W Tc
  • Element Configuration
    Single
  • Current
    18A
  • Power Dissipation
    2W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    500mOhm @ 1.1A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    270pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    1.8A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 10V
  • Rise Time
    63ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    9.6 ns
  • Continuous Drain Current (ID)
    -1.8A
  • Threshold Voltage
    -4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance
    270pF
  • Drain to Source Resistance
    500mOhm
  • Rds On Max
    500 mΩ
  • Height
    1.45mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRFL9014PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [-1.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-60V, the drain-source breakdown voltage is -60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 9.6 ns.MOSFETs have 500mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -4V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFL9014PBF Features
a continuous drain current (ID) of -1.8A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 9.6 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)


IRFL9014PBF Applications
There are a lot of Vishay Siliconix
IRFL9014PBF applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFL9014PBF More Descriptions
Single P-Channel 60 V 0.5 Ohms Surface Mount Power Mosfet - SOT-223
MOSFET P-CH 60V 1.8A SOT223 | Siliconix / Vishay IRFL9014PBF
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P CH, 60V, 1.8A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to IRFL9014PBF.
  • Image
    Part Number
    Manufacturer
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Radiation Hardening
    View Compare
  • IRFL9014PBF
    IRFL9014PBF
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    SOT-223
    250.212891mg
    -55°C~150°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    500mOhm
    150°C
    -55°C
    -60V
    MOSFET (Metal Oxide)
    -1.8A
    1
    1
    60V
    2W Ta 3.1W Tc
    Single
    18A
    2W
    11 ns
    P-Channel
    500mOhm @ 1.1A, 10V
    4V @ 250μA
    270pF @ 25V
    1.8A Tc
    12nC @ 10V
    63ns
    60V
    10V
    ±20V
    31 ns
    9.6 ns
    -1.8A
    -4V
    20V
    -60V
    270pF
    500mOhm
    500 mΩ
    1.45mm
    6.7mm
    3.7mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFL210
    -
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    SOT-223
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2W Ta 3.1W Tc
    -
    -
    -
    8.2 ns
    N-Channel
    1.5Ohm @ 580mA, 10V
    4V @ 250μA
    140pF @ 25V
    960mA Tc
    8.2nC @ 10V
    17ns
    200V
    10V
    ±20V
    8.9 ns
    14 ns
    960mA
    -
    20V
    200V
    140pF
    1.5Ohm
    1.5 Ω
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFL4105
    -
    -
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    -
    1W Ta
    -
    -
    -
    -
    N-Channel
    45m Ω @ 3.7A, 10V
    4V @ 250μA
    660pF @ 25V
    3.7A Ta
    35nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    4
    EAR99
    MATTE TIN
    DUAL
    GULL WING
    260
    30
    R-PDSO-G4
    Not Qualified
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    3.7A
    0.045Ohm
    55V
    -
  • IRFL014PBF
    Tin
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    3
    SOT-223
    250.212891mg
    -55°C~150°C TJ
    Tube
    2012
    Obsolete
    1 (Unlimited)
    200mOhm
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    2.7A
    1
    1
    -
    2W Ta 3.1W Tc
    Single
    -
    2W
    10 ns
    N-Channel
    200mOhm @ 1.6A, 10V
    4V @ 250μA
    300pF @ 25V
    2.7A Tc
    11nC @ 10V
    50ns
    60V
    10V
    ±20V
    19 ns
    13 ns
    2.7A
    4V
    20V
    60V
    300pF
    200mOhm
    200 mΩ
    1.8mm
    6.7mm
    3.7mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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