Vishay Siliconix IRFL9014PBF
- Part Number:
- IRFL9014PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488574-IRFL9014PBF
- Description:
- MOSFET P-CH 60V 1.8A SOT223
- Datasheet:
- IRFL9014PBF
Vishay Siliconix IRFL9014PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFL9014PBF.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Supplier Device PackageSOT-223
- Weight250.212891mg
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance500mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Current Rating-1.8A
- Number of Elements1
- Number of Channels1
- Voltage60V
- Power Dissipation-Max2W Ta 3.1W Tc
- Element ConfigurationSingle
- Current18A
- Power Dissipation2W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs500mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds270pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.8A Tc
- Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
- Rise Time63ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)31 ns
- Turn-Off Delay Time9.6 ns
- Continuous Drain Current (ID)-1.8A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Input Capacitance270pF
- Drain to Source Resistance500mOhm
- Rds On Max500 mΩ
- Height1.45mm
- Length6.7mm
- Width3.7mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFL9014PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [-1.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-60V, the drain-source breakdown voltage is -60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 9.6 ns.MOSFETs have 500mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -4V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFL9014PBF Features
a continuous drain current (ID) of -1.8A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 9.6 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRFL9014PBF Applications
There are a lot of Vishay Siliconix
IRFL9014PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 270pF @ 25V.This device has a continuous drain current (ID) of [-1.8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-60V, the drain-source breakdown voltage is -60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 9.6 ns.MOSFETs have 500mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -4V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRFL9014PBF Features
a continuous drain current (ID) of -1.8A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 9.6 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRFL9014PBF Applications
There are a lot of Vishay Siliconix
IRFL9014PBF applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IRFL9014PBF More Descriptions
Single P-Channel 60 V 0.5 Ohms Surface Mount Power Mosfet - SOT-223
MOSFET P-CH 60V 1.8A SOT223 | Siliconix / Vishay IRFL9014PBF
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P CH, 60V, 1.8A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
MOSFET P-CH 60V 1.8A SOT223 | Siliconix / Vishay IRFL9014PBF
Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P CH, 60V, 1.8A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -1.8A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 3.1W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
The three parts on the right have similar specifications to IRFL9014PBF.
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ImagePart NumberManufacturerContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthREACH SVHCRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRadiation HardeningView Compare
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IRFL9014PBFTinSurface MountSurface MountTO-261-4, TO-261AA4SOT-223250.212891mg-55°C~150°C TJTube2015Obsolete1 (Unlimited)500mOhm150°C-55°C-60VMOSFET (Metal Oxide)-1.8A1160V2W Ta 3.1W TcSingle18A2W11 nsP-Channel500mOhm @ 1.1A, 10V4V @ 250μA270pF @ 25V1.8A Tc12nC @ 10V63ns60V10V±20V31 ns9.6 ns-1.8A-4V20V-60V270pF500mOhm500 mΩ1.45mm6.7mm3.7mmUnknownROHS3 CompliantLead Free---------------------
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-Surface MountSurface MountTO-261-4, TO-261AA4SOT-223--55°C~150°C TJTube2016Obsolete1 (Unlimited)-150°C-55°C-MOSFET (Metal Oxide)----2W Ta 3.1W Tc---8.2 nsN-Channel1.5Ohm @ 580mA, 10V4V @ 250μA140pF @ 25V960mA Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns960mA-20V200V140pF1.5Ohm1.5 Ω----Non-RoHS Compliant---------------------
-
--Surface MountTO-261-4, TO-261AA----55°C~150°C TJTube1999Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1--1W Ta----N-Channel45m Ω @ 3.7A, 10V4V @ 250μA660pF @ 25V3.7A Ta35nC @ 10V-55V10V±20V-------------Non-RoHS Compliant-YESSILICONHEXFET®e34EAR99MATTE TINDUALGULL WING26030R-PDSO-G4Not QualifiedSINGLEENHANCEMENT MODEDRAIN3.7A0.045Ohm55V-
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TinSurface MountSurface MountTO-261-4, TO-261AA3SOT-223250.212891mg-55°C~150°C TJTube2012Obsolete1 (Unlimited)200mOhm150°C-55°C60VMOSFET (Metal Oxide)2.7A11-2W Ta 3.1W TcSingle-2W10 nsN-Channel200mOhm @ 1.6A, 10V4V @ 250μA300pF @ 25V2.7A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns2.7A4V20V60V300pF200mOhm200 mΩ1.8mm6.7mm3.7mmUnknownROHS3 CompliantLead Free-------------------No
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