Vishay Siliconix IRFL210TR
- Part Number:
- IRFL210TR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2491599-IRFL210TR
- Description:
- MOSFET N-CH 200V 0.96A SOT223
- Datasheet:
- IRFL210TR
Vishay Siliconix IRFL210TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFL210TR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Supplier Device PackageSOT-223
- Weight250.212891mg
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Current Rating960mA
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta 3.1W Tc
- Power Dissipation2W
- Turn On Delay Time8.2 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.5Ohm @ 580mA, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
- Current - Continuous Drain (Id) @ 25°C960mA Tc
- Gate Charge (Qg) (Max) @ Vgs8.2nC @ 10V
- Rise Time17ns
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8.9 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)960mA
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage200V
- Input Capacitance140pF
- Drain to Source Resistance1.5Ohm
- Rds On Max1.5 Ω
- Height1.8mm
- Length6.7mm
- Width3.7mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRFL210TR Overview
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 960mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFL210TR Features
a continuous drain current (ID) of 960mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFL210TR Applications
There are a lot of Vishay Siliconix
IRFL210TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 960mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRFL210TR Features
a continuous drain current (ID) of 960mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRFL210TR Applications
There are a lot of Vishay Siliconix
IRFL210TR applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFL210TR More Descriptions
Trans MOSFET N-CH 200V 0.96A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-CH 200V 960MA SOT223
Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET N-CHANNEL 200V
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/dpak
MOSFET N-CH 200V 960MA SOT223
Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET N-CHANNEL 200V
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/dpak
The three parts on the right have similar specifications to IRFL210TR.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinNominal VgsREACH SVHCView Compare
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IRFL210TRSurface MountSurface MountTO-261-4, TO-261AA4SOT-223250.212891mg-55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C200VMOSFET (Metal Oxide)960mA112W Ta 3.1W Tc2W8.2 nsN-Channel1.5Ohm @ 580mA, 10V4V @ 250μA140pF @ 25V960mA Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns960mA20V200V140pF1.5Ohm1.5 Ω1.8mm6.7mm3.7mmNon-RoHS CompliantContains Lead----------------------
-
Surface MountSurface MountTO-261-4, TO-261AA4SOT-223--55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C-MOSFET (Metal Oxide)---2W Ta 3.1W Tc-8.2 nsN-Channel1.5Ohm @ 580mA, 10V4V @ 250μA140pF @ 25V960mA Tc8.2nC @ 10V17ns200V10V±20V8.9 ns14 ns960mA20V200V140pF1.5Ohm1.5 Ω---Non-RoHS Compliant----------------------
-
-Surface MountTO-261-4, TO-261AA----55°C~150°C TJTube1999Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-1W Ta--N-Channel45m Ω @ 3.7A, 10V4V @ 250μA660pF @ 25V3.7A Ta35nC @ 10V-55V10V±20V-----------Non-RoHS Compliant-YESSILICONHEXFET®e34EAR99MATTE TINDUALGULL WING26030R-PDSO-G4Not QualifiedSINGLEENHANCEMENT MODEDRAIN3.7A0.045Ohm55V--
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Surface MountSurface MountTO-261-4, TO-261AA4SOT-223--55°C~150°C TJTape & Reel (TR)2016Obsolete1 (Unlimited)150°C-55°C60VMOSFET (Metal Oxide)2.7A1-2W Ta 3.1W Tc2W10 nsN-Channel200mOhm @ 1.6A, 10V4V @ 250μA300pF @ 25V2.7A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns2.7A20V-60V300pF200mOhm200 mΩ---Non-RoHS CompliantContains Lead-------------------4 VUnknown
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