IRFL210TR

Vishay Siliconix IRFL210TR

Part Number:
IRFL210TR
Manufacturer:
Vishay Siliconix
Ventron No:
2491599-IRFL210TR
Description:
MOSFET N-CH 200V 0.96A SOT223
ECAD Model:
Datasheet:
IRFL210TR

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Specifications
Vishay Siliconix IRFL210TR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFL210TR.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Supplier Device Package
    SOT-223
  • Weight
    250.212891mg
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    200V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    960mA
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta 3.1W Tc
  • Power Dissipation
    2W
  • Turn On Delay Time
    8.2 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 580mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    140pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    960mA Tc
  • Gate Charge (Qg) (Max) @ Vgs
    8.2nC @ 10V
  • Rise Time
    17ns
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    8.9 ns
  • Turn-Off Delay Time
    14 ns
  • Continuous Drain Current (ID)
    960mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    200V
  • Input Capacitance
    140pF
  • Drain to Source Resistance
    1.5Ohm
  • Rds On Max
    1.5 Ω
  • Height
    1.8mm
  • Length
    6.7mm
  • Width
    3.7mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRFL210TR Overview
A device's maximum input capacitance is 140pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 960mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 14 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFL210TR Features
a continuous drain current (ID) of 960mA
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRFL210TR Applications
There are a lot of Vishay Siliconix
IRFL210TR applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRFL210TR More Descriptions
Trans MOSFET N-CH 200V 0.96A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-CH 200V 960MA SOT223
Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET N-CHANNEL 200V
OEMs, CMs ONLY (NO BROKERS)
vpe: 2500/tr/dpak
Product Comparison
The three parts on the right have similar specifications to IRFL210TR.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRFL210TR
    IRFL210TR
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    SOT-223
    250.212891mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    200V
    MOSFET (Metal Oxide)
    960mA
    1
    1
    2W Ta 3.1W Tc
    2W
    8.2 ns
    N-Channel
    1.5Ohm @ 580mA, 10V
    4V @ 250μA
    140pF @ 25V
    960mA Tc
    8.2nC @ 10V
    17ns
    200V
    10V
    ±20V
    8.9 ns
    14 ns
    960mA
    20V
    200V
    140pF
    1.5Ohm
    1.5 Ω
    1.8mm
    6.7mm
    3.7mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFL210
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    SOT-223
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2W Ta 3.1W Tc
    -
    8.2 ns
    N-Channel
    1.5Ohm @ 580mA, 10V
    4V @ 250μA
    140pF @ 25V
    960mA Tc
    8.2nC @ 10V
    17ns
    200V
    10V
    ±20V
    8.9 ns
    14 ns
    960mA
    20V
    200V
    140pF
    1.5Ohm
    1.5 Ω
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFL4105
    -
    Surface Mount
    TO-261-4, TO-261AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    1999
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    1W Ta
    -
    -
    N-Channel
    45m Ω @ 3.7A, 10V
    4V @ 250μA
    660pF @ 25V
    3.7A Ta
    35nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    e3
    4
    EAR99
    MATTE TIN
    DUAL
    GULL WING
    260
    30
    R-PDSO-G4
    Not Qualified
    SINGLE
    ENHANCEMENT MODE
    DRAIN
    3.7A
    0.045Ohm
    55V
    -
    -
  • IRFL014TR
    Surface Mount
    Surface Mount
    TO-261-4, TO-261AA
    4
    SOT-223
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    60V
    MOSFET (Metal Oxide)
    2.7A
    1
    -
    2W Ta 3.1W Tc
    2W
    10 ns
    N-Channel
    200mOhm @ 1.6A, 10V
    4V @ 250μA
    300pF @ 25V
    2.7A Tc
    11nC @ 10V
    50ns
    60V
    10V
    ±20V
    19 ns
    13 ns
    2.7A
    20V
    -60V
    300pF
    200mOhm
    200 mΩ
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4 V
    Unknown
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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