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Infineon Technologies IRFL014NTRPBF
- Part Number:
- IRFL014NTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479270-IRFL014NTRPBF
- Description:
- MOSFET N-CH 55V 1.9A SOT223
- ECAD Model:
-
- Datasheet:
- IRFL014NTRPBF
Infineon Technologies IRFL014NTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFL014NTRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance160mOhm
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating1.9A
- JESD-30 CodeR-PDSO-G4
- Number of Elements1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.1W
- Case ConnectionDRAIN
- Turn On Delay Time6.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs160m Ω @ 1.9A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds190pF @ 25V
- Current - Continuous Drain (Id) @ 25°C1.9A Ta
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time7.1ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)3.3 ns
- Turn-Off Delay Time12 ns
- Continuous Drain Current (ID)1.9A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)2.7A
- Drain to Source Breakdown Voltage55V
- Recovery Time61 ns
- Nominal Vgs4 V
- Height1.4478mm
- Length6.6802mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRFL014NTRPBF Description
The IRFL014NTRPBF is a HEXFET? single N-channel Power MOSFET that utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. IRFL014NTRPBF is designed for surface-mount using vapour phase, infrared, or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
IRFL014NTRPBF Features Surface Mount
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFL014NTRPBF Applications Power Management
DC to DC Converter
Switched Mode Power Supplies
Commercial and Industrial Applications
Fast Switching
Amplification Purpose
IRFL014NTRPBF Features Surface Mount
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFL014NTRPBF Applications Power Management
DC to DC Converter
Switched Mode Power Supplies
Commercial and Industrial Applications
Fast Switching
Amplification Purpose
IRFL014NTRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS /-20V
Trans MOSFET N-CH Si 55V 2.7A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 55V 1.9A SOT223
Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFL014NTRPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 3.3 / Rise Time ns = 7.1 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
Trans MOSFET N-CH Si 55V 2.7A 4-Pin(3 Tab) SOT-223 T/R / MOSFET N-CH 55V 1.9A SOT223
Single N-Channel 55 V 0.16 Ohm 7 nC HEXFET® Power Mosfet - SOT-223
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHSInfineon SCT
Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:1.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFL014NTRPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 160 / Gate-Source Voltage V = 20 / Fall Time ns = 3.3 / Rise Time ns = 7.1 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 6.6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
The three parts on the right have similar specifications to IRFL014NTRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Dual Supply VoltageMax Junction Temperature (Tj)View Compare
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IRFL014NTRPBF12 WeeksSurface MountSurface MountTO-261-4, TO-261AA3SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2004Active1 (Unlimited)4EAR99160mOhmAVALANCHE RATED, HIGH RELIABILITYFET General Purpose Power55VMOSFET (Metal Oxide)DUALGULL WING1.9AR-PDSO-G411W TaSingleENHANCEMENT MODE2.1WDRAIN6.6 nsN-ChannelSWITCHING160m Ω @ 1.9A, 10V4V @ 250μA190pF @ 25V1.9A Ta11nC @ 10V7.1ns10V±20V3.3 ns12 ns1.9A4V20V2.7A55V61 ns4 V1.4478mm6.6802mm3.7mmNo SVHCNoROHS3 CompliantLead Free---------------- -
-Surface MountSurface MountTO-261-4, TO-261AA3--55°C~150°C TJTube-2015Obsolete1 (Unlimited)--1.2Ohm---MOSFET (Metal Oxide)----12W Ta 3.1W TcSingle-2W-10 nsP-Channel-1.2Ohm @ 660mA, 10V4V @ 250μA200pF @ 25V1.1A Tc8.7nC @ 10V27ns10V±20V17 ns15 ns1.1A-4V20V--100V--1.45mm6.7mm3.7mmUnknownNoROHS3 CompliantLead FreeSOT-223250.212891mg150°C-55°C1100V200pF1.2Ohm1.2 Ω------
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12 WeeksSurface MountSurface MountTO-261-4, TO-261AA3SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1999Active1 (Unlimited)4EAR99185Ohm-FET General Purpose Power150VMOSFET (Metal Oxide)DUALGULL WING2.6AR-PDSO-G412.8W TaSingleENHANCEMENT MODE2.8WDRAIN8.4 nsN-ChannelSWITCHING185m Ω @ 1.6A, 10V5V @ 250μA420pF @ 25V2.6A Ta19nC @ 10V21ns10V±30V19 ns20 ns2.6A5V30V-150V-5 V1.8mm6.6802mm3.7mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free----1----e3Matte Tin (Sn)26030150V150°C
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-Surface MountSurface MountTO-261-4, TO-261AA4--55°C~150°C TJTube-2016Obsolete1 (Unlimited)------100VMOSFET (Metal Oxide)---1.1A-12W Ta 3.1W Tc--2W--P-Channel-1.2Ohm @ 660mA, 10V4V @ 250μA200pF @ 25V1.1A Tc8.7nC @ 10V27ns10V±20V17 ns15 ns1.1A-20V--100V-------Non-RoHS CompliantContains LeadSOT-223-150°C-55°C-100V200pF1.2Ohm1.2 Ω------
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