Vishay Siliconix IRFIB6N60APBF

Name: IRFIB6N60APBF
Brand: Vishay Siliconix
SKU: 2479470-IRFIB6N60APBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFIB6N60APBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2479470-IRFIB6N60APBF

Description:: MOSFET N-CH 600V 5.5A TO220FP

ECAD Model:

Datasheet:: IRFIB6N60APBF

Specifications

Vishay Siliconix IRFIB6N60APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFIB6N60APBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Supplier Device Package
TO-220-3
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
750mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Power Dissipation
60W
Turn On Delay Time
13 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
750mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.5A Tc
Gate Charge (Qg) (Max) @ Vgs
49nC @ 10V
Rise Time
25ns
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Input Capacitance
1.4nF
Drain to Source Resistance
750mOhm
Rds On Max
750 mΩ
Nominal Vgs
4 V
Height
9.8mm
Length
10.63mm
Width
4.83mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFIB6N60APBF Overview
A device's maximum input capacitance is 1400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 750mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRFIB6N60APBF Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 750mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)

IRFIB6N60APBF Applications
There are a lot of Vishay Siliconix
IRFIB6N60APBF applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

IRFIB6N60APBF More Descriptions

Single N-Channel 600 V 0.75 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 600V 5.5A 3-Pin(3 Tab) TO-220FP / MOSFET N-CH 600V 5.5A TO220FP
MOSFET, N, 600V, 5.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IRFIB6N60APBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Voltage - Rated DC

Current Rating

View Compare
IRFIB6N60APBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Active

1 (Unlimited)

750mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

60W Tc

Single

60W

13 ns

N-Channel

750mOhm @ 3.3A, 10V

4V @ 250μA

1400pF @ 25V

5.5A Tc

49nC @ 10V

25ns

600V

10V

±30V

22 ns

30 ns

5.5A

4V

30V

600V

1.4nF

750mOhm

750 mΩ

4 V

9.8mm

10.63mm

4.83mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFI4905

Infineon Technologies

-

-

Through Hole

TO-220-3 Full Pack

-

-

-

-

Tube

1997

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

63W Tc

-

-

-

P-Channel

20m Ω @ 22A, 10V

4V @ 250μA

3400pF @ 25V

41A Tc

180nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

NO

SILICON

HEXFET®

e3

3

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

NOT SPECIFIED

NOT SPECIFIED

R-PSFM-T3

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

ISOLATED

SWITCHING

TO-220AB

41A

0.02Ohm

260A

55V

930 mJ

-

-

IRFIB6N60APBF vs IRFI4905
IRFI614G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~150°C TJ

Tube

2016

Obsolete

1 (Unlimited)

-

150°C

-55°C

MOSFET (Metal Oxide)

-

1

23W Tc

Single

-

7 ns

N-Channel

2Ohm @ 1.3A, 10V

4V @ 250μA

140pF @ 25V

2.1A Tc

8.2nC @ 10V

7.6ns

250V

10V

±20V

7 ns

16 ns

2.1A

-

20V

-

140pF

2Ohm

2 Ω

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

250V

2.1A

IRFIB6N60APBF vs IRFI614G
IRFI530G

Vishay Siliconix

-

Through Hole

Through Hole

TO-220-3 Full Pack, Isolated Tab

3

TO-220-3

6.000006g

-55°C~175°C TJ

Tube

2017

Obsolete

1 (Unlimited)

-

175°C

-55°C

MOSFET (Metal Oxide)

1

1

42W Tc

Single

42W

8.5 ns

N-Channel

160mOhm @ 5.8A, 10V

4V @ 250μA

670pF @ 25V

9.7A Tc

33nC @ 10V

28ns

100V

10V

±20V

25 ns

34 ns

9.7A

-

20V

-

670pF

160mOhm

160 mΩ

-

9.8mm

10.63mm

4.83mm

-

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFIB6N60APBF vs IRFI530G