Vishay Siliconix IRFI9Z34G
- Part Number:
- IRFI9Z34G
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853209-IRFI9Z34G
- Description:
- MOSFET P-CH 60V 12A TO220FP
- Datasheet:
- IRFI9Z34G
Vishay Siliconix IRFI9Z34G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI9Z34G.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack, Isolated Tab
- Number of Pins3
- Supplier Device PackageTO-220-3
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max42W Tc
- Element ConfigurationSingle
- Turn On Delay Time18 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs140mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
- Rise Time120ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)58 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)12A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Input Capacitance1.1nF
- Drain to Source Resistance140mOhm
- Rds On Max140 mΩ
- Height9.8mm
- Length10.63mm
- Width4.83mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
IRFI9Z34G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 140mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFI9Z34G Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)
IRFI9Z34G Applications
There are a lot of Vishay Siliconix
IRFI9Z34G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 140mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFI9Z34G Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)
IRFI9Z34G Applications
There are a lot of Vishay Siliconix
IRFI9Z34G applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFI9Z34G More Descriptions
Trans MOSFET P-CH 60V 12A 3-Pin (3 Tab) TO-220 Full-Pak
MOSFET P-CH 60V 12A TO220FP
60V 12.000A FULLPAK TO-220
MOSFET P-CH 60V 12A TO220FP
60V 12.000A FULLPAK TO-220
The three parts on the right have similar specifications to IRFI9Z34G.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Voltage - Rated DCCurrent RatingLead FreePower DissipationView Compare
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IRFI9Z34GThrough HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~175°C TJTube2015Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)142W TcSingle18 nsP-Channel140mOhm @ 7.2A, 10V4V @ 250μA1100pF @ 25V12A Tc34nC @ 10V120ns60V10V±20V58 ns20 ns12A20V-60V1.1nF140mOhm140 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant----------------------------
-
-Through HoleTO-220-3 Full Pack----Tube1997Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-63W Tc--P-Channel20m Ω @ 22A, 10V4V @ 250μA3400pF @ 25V41A Tc180nC @ 10V-55V10V±20V------------Non-RoHS CompliantNOSILICONHEXFET®e33EAR99Matte Tin (Sn) - with Nickel (Ni) barrierSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEISOLATEDSWITCHINGTO-220AB41A0.02Ohm260A55V930 mJ----
-
Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)123W TcSingle7 nsN-Channel2Ohm @ 1.3A, 10V4V @ 250μA140pF @ 25V2.1A Tc8.2nC @ 10V7.6ns250V10V±20V7 ns16 ns2.1A20V-140pF2Ohm2 Ω9.8mm10.63mm4.83mmNoNon-RoHS Compliant-----------------------250V2.1AContains Lead-
-
Through HoleThrough HoleTO-220-3 Full Pack, Isolated Tab3TO-220-36.000006g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)135W TcSingle9.4 nsN-Channel400mOhm @ 3.5A, 10V4V @ 250μA800pF @ 25V5.9A Tc43nC @ 10V28ns200V10V±20V20 ns39 ns5.9A20V200V800pF400mOhm400 mΩ9.8mm10.63mm4.83mmNoNon-RoHS Compliant-----------------------250V5.9AContains Lead32W
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