IRFI9Z34G

Vishay Siliconix IRFI9Z34G

Part Number:
IRFI9Z34G
Manufacturer:
Vishay Siliconix
Ventron No:
2853209-IRFI9Z34G
Description:
MOSFET P-CH 60V 12A TO220FP
ECAD Model:
Datasheet:
IRFI9Z34G

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Specifications
Vishay Siliconix IRFI9Z34G technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFI9Z34G.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack, Isolated Tab
  • Number of Pins
    3
  • Supplier Device Package
    TO-220-3
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2015
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    42W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    18 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    140mOhm @ 7.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    34nC @ 10V
  • Rise Time
    120ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    58 ns
  • Turn-Off Delay Time
    20 ns
  • Continuous Drain Current (ID)
    12A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Input Capacitance
    1.1nF
  • Drain to Source Resistance
    140mOhm
  • Rds On Max
    140 mΩ
  • Height
    9.8mm
  • Length
    10.63mm
  • Width
    4.83mm
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
Description
IRFI9Z34G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 140mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 18 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFI9Z34G Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 140mOhm
a 60V drain to source voltage (Vdss)


IRFI9Z34G Applications
There are a lot of Vishay Siliconix
IRFI9Z34G applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFI9Z34G More Descriptions
Trans MOSFET P-CH 60V 12A 3-Pin (3 Tab) TO-220 Full-Pak
MOSFET P-CH 60V 12A TO220FP
60V 12.000A FULLPAK TO-220
Product Comparison
The three parts on the right have similar specifications to IRFI9Z34G.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Surface Mount
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Voltage - Rated DC
    Current Rating
    Lead Free
    Power Dissipation
    View Compare
  • IRFI9Z34G
    IRFI9Z34G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~175°C TJ
    Tube
    2015
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    1
    42W Tc
    Single
    18 ns
    P-Channel
    140mOhm @ 7.2A, 10V
    4V @ 250μA
    1100pF @ 25V
    12A Tc
    34nC @ 10V
    120ns
    60V
    10V
    ±20V
    58 ns
    20 ns
    12A
    20V
    -60V
    1.1nF
    140mOhm
    140 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRFI4905
    -
    Through Hole
    TO-220-3 Full Pack
    -
    -
    -
    -
    Tube
    1997
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    63W Tc
    -
    -
    P-Channel
    20m Ω @ 22A, 10V
    4V @ 250μA
    3400pF @ 25V
    41A Tc
    180nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    NO
    SILICON
    HEXFET®
    e3
    3
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    ISOLATED
    SWITCHING
    TO-220AB
    41A
    0.02Ohm
    260A
    55V
    930 mJ
    -
    -
    -
    -
  • IRFI614G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    23W Tc
    Single
    7 ns
    N-Channel
    2Ohm @ 1.3A, 10V
    4V @ 250μA
    140pF @ 25V
    2.1A Tc
    8.2nC @ 10V
    7.6ns
    250V
    10V
    ±20V
    7 ns
    16 ns
    2.1A
    20V
    -
    140pF
    2Ohm
    2 Ω
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    2.1A
    Contains Lead
    -
  • IRFI630G
    Through Hole
    Through Hole
    TO-220-3 Full Pack, Isolated Tab
    3
    TO-220-3
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    35W Tc
    Single
    9.4 ns
    N-Channel
    400mOhm @ 3.5A, 10V
    4V @ 250μA
    800pF @ 25V
    5.9A Tc
    43nC @ 10V
    28ns
    200V
    10V
    ±20V
    20 ns
    39 ns
    5.9A
    20V
    200V
    800pF
    400mOhm
    400 mΩ
    9.8mm
    10.63mm
    4.83mm
    No
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    250V
    5.9A
    Contains Lead
    32W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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